Kelsey A Mengle
Kelsey A Mengle
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Electronic and optical properties of two-dimensional GaN from first-principles
N Sanders, D Bayerl, G Shi, KA Mengle, E Kioupakis
Nano letters 17 (12), 7345-7349, 2017
First-principles calculations of the near-edge optical properties of β-Ga2O3
KA Mengle, G Shi, D Bayerl, E Kioupakis
Applied Physics Letters 109 (21), 2016
Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections
K Bushick, K Mengle, N Sanders, E Kioupakis
Applied physics letters 114 (2), 2019
Vibrational and electron-phonon coupling properties of β-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field
KA Mengle, E Kioupakis
AIP Advances 9 (1), 2019
Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping
S Chae, J Lee, KA Mengle, JT Heron, E Kioupakis
Applied Physics Letters 114 (10), 2019
Impact of the stacking sequence on the bandgap and luminescence properties of bulk, bilayer, and monolayer hexagonal boron nitride
KA Mengle, E Kioupakis
APL Materials 7 (2), 2019
Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry
S Chae, K Mengle, JT Heron, E Kioupakis
Applied physics letters 113 (21), 2018
Optical properties of cubic boron arsenide
B Song, K Chen, K Bushick, KA Mengle, F Tian, GAGU Gamage, Z Ren, ...
Applied Physics Letters 116 (14), 2020
Electron and hole mobility of rutile GeO2 from first principles: An ultrawide-bandgap semiconductor for power electronics
K Bushick, KA Mengle, S Chae, E Kioupakis
Applied Physics Letters 117 (18), 2020
Quasiparticle band structure and optical properties of rutile GeO2, an ultra-wide-band-gap semiconductor
KA Mengle, S Chae, E Kioupakis
Journal of Applied Physics 126 (8), 2019
Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy
DA Laleyan, K Mengle, S Zhao, Y Wang, E Kioupakis, Z Mi
Optics express 26 (18), 23031-23039, 2018
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ...
Applied Physics Letters 118 (26), 2021
Thermal conductivity of rutile germanium dioxide
S Chae, KA Mengle, R Lu, A Olvera, N Sanders, J Lee, PFP Poudeu, ...
Applied Physics Letters 117 (10), 2020
One-Dimensional Coordination Polymers of 12-Metallacrown-4 Complexes: {Na2(L)2[12--4]} n , where L is Either O2CCH2CH3 or O2CCH2CH …
KA Mengle, EJ Longenecker, M Zeller, CM Zaleski
Journal of Chemical Crystallography 45, 36-43, 2015
AIP Adv. 9, 015313 (2019)
KA Mengle, E Kioupakis
Thermal conductivity of AlN, GaN, and AlGaN alloys as a function of composition, temperature, crystallographic direction, and isotope disorder from first principles
S Dagli, KA Mengle, E Kioupakis
arXiv preprint arXiv:1910.05440, 2019
Effect of stacking orientation on the electronic and optical properties of polar 2D III-nitride bilayers
N Sanders, M Zhang, K Mengle, L Qi, E Kioupakis
The Journal of Physical Chemistry C 125 (30), 16837-16842, 2021
Modeling of the processing dynamics of aerogel/gold nanoparticle composites
KA Mengle, JN Richardson, JS Kegerreis
Materials Chemistry and Physics 148 (1-2), 478-484, 2014
Computational discovery of extreme-gap semiconductors
S Chae, N Sanders, K Mengle, J Heron, E Kioupakis
APS March Meeting Abstracts 2022, B47. 003, 2022
Computational discovery of ultra-wide-band-gap semiconductors
E Kioupakis, S Chae, K Mengle, K Bushick, N Sanders, N Pant, S Dagli, ...
APS March Meeting Abstracts 2021, J56. 001, 2021
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