| Electronic and optical properties of two-dimensional GaN from first-principles N Sanders, D Bayerl, G Shi, KA Mengle, E Kioupakis Nano letters 17 (12), 7345-7349, 2017 | 174 | 2017 |
| First-principles calculations of the near-edge optical properties of β-Ga2O3 KA Mengle, G Shi, D Bayerl, E Kioupakis Applied Physics Letters 109 (21), 2016 | 81 | 2016 |
| Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections K Bushick, K Mengle, N Sanders, E Kioupakis Applied physics letters 114 (2), 2019 | 65 | 2019 |
| Vibrational and electron-phonon coupling properties of β-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field KA Mengle, E Kioupakis AIP Advances 9 (1), 2019 | 57 | 2019 |
| Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping S Chae, J Lee, KA Mengle, JT Heron, E Kioupakis Applied Physics Letters 114 (10), 2019 | 50 | 2019 |
| Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry S Chae, K Mengle, JT Heron, E Kioupakis Applied physics letters 113 (21), 2018 | 49 | 2018 |
| Impact of the stacking sequence on the bandgap and luminescence properties of bulk, bilayer, and monolayer hexagonal boron nitride KA Mengle, E Kioupakis APL Materials 7 (2), 2019 | 48 | 2019 |
| Optical properties of cubic boron arsenide B Song, K Chen, K Bushick, KA Mengle, F Tian, GAGU Gamage, Z Ren, ... Applied Physics Letters 116 (14), 2020 | 35 | 2020 |
| Electron and hole mobility of rutile GeO2 from first principles: An ultrawide-bandgap semiconductor for power electronics K Bushick, KA Mengle, S Chae, E Kioupakis Applied Physics Letters 117 (18), 2020 | 33 | 2020 |
| Quasiparticle band structure and optical properties of rutile GeO2, an ultra-wide-band-gap semiconductor KA Mengle, S Chae, E Kioupakis Journal of Applied Physics 126 (8), 2019 | 33 | 2019 |
| Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy DA Laleyan, K Mengle, S Zhao, Y Wang, E Kioupakis, Z Mi Optics express 26 (18), 23031-23039, 2018 | 31 | 2018 |
| Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2 S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ... Applied Physics Letters 118 (26), 2021 | 29 | 2021 |
| Thermal conductivity of rutile germanium dioxide S Chae, KA Mengle, R Lu, A Olvera, N Sanders, J Lee, PFP Poudeu, ... Applied Physics Letters 117 (10), 2020 | 28 | 2020 |
| One-Dimensional Coordination Polymers of 12-Metallacrown-4 Complexes: {Na2(L)2[12--4]} n , where L is Either −O2CCH2CH3 or −O2CCH2CH … KA Mengle, EJ Longenecker, M Zeller, CM Zaleski Journal of Chemical Crystallography 45, 36-43, 2015 | 9 | 2015 |
| AIP Adv. 9, 015313 (2019) KA Mengle, E Kioupakis | 7 | |
| Thermal conductivity of AlN, GaN, and AlGaN alloys as a function of composition, temperature, crystallographic direction, and isotope disorder from first principles S Dagli, KA Mengle, E Kioupakis arXiv preprint arXiv:1910.05440, 2019 | 6 | 2019 |
| Effect of stacking orientation on the electronic and optical properties of polar 2D III-nitride bilayers N Sanders, M Zhang, K Mengle, L Qi, E Kioupakis The Journal of Physical Chemistry C 125 (30), 16837-16842, 2021 | 3 | 2021 |
| Modeling of the processing dynamics of aerogel/gold nanoparticle composites KA Mengle, JN Richardson, JS Kegerreis Materials Chemistry and Physics 148 (1-2), 478-484, 2014 | 1 | 2014 |
| Computational discovery of extreme-gap semiconductors S Chae, N Sanders, K Mengle, J Heron, E Kioupakis APS March Meeting Abstracts 2022, B47. 003, 2022 | | 2022 |
| Computational discovery of ultra-wide-band-gap semiconductors E Kioupakis, S Chae, K Mengle, K Bushick, N Sanders, N Pant, S Dagli, ... APS March Meeting Abstracts 2021, J56. 001, 2021 | | 2021 |
