| A silicon carbide room-temperature single-photon source S Castelletto, BC Johnson, V Ivády, N Stavrias, T Umeda, A Gali, ... Nature materials 13 (2), 151-156, 2014 | 410 | 2014 |
| Properties of nitrogen-vacancy centers in diamond: the group theoretic approach JR Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, MD Lukin New Journal of Physics 13 (2), 025025, 2011 | 402 | 2011 |
| Coherent control of single spins in silicon carbide at room temperature M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ... Nature materials 14 (2), 164-168, 2015 | 389 | 2015 |
| Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors A Gali, M Fyta, E Kaxiras Physical Review B 77 (15), 155206, 2008 | 320 | 2008 |
| Electronic structure of the silicon vacancy color center in diamond C Hepp, T Müller, V Waselowski, JN Becker, B Pingault, H Sternschulte, ... Physical Review Letters 112 (3), 036405, 2014 | 298 | 2014 |
| Electrically driven single-photon source at room temperature in diamond N Mizuochi, T Makino, H Kato, D Takeuchi, M Ogura, H Okushi, M Nothaft, ... Nature photonics 6 (5), 299-303, 2012 | 290 | 2012 |
| Accurate defect levels obtained from the HSE06 range-separated hybrid functional P Deák, B Aradi, T Frauenheim, E Janzén, A Gali Physical Review B 81 (15), 153203, 2010 | 240 | 2010 |
| Molecular-sized fluorescent nanodiamonds II Vlasov, AA Shiryaev, T Rendler, S Steinert, SY Lee, D Antonov, M Vörös, ... Nature nanotechnology 9 (1), 54-58, 2014 | 229 | 2014 |
| Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ... Physical Review B 83 (4), 045303, 2011 | 224 | 2011 |
| Divacancy in 4H-SiC NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ... Physical review letters 96 (5), 055501, 2006 | 204 | 2006 |
| Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures P Siyushev, H Pinto, M Vörös, A Gali, F Jelezko, J Wrachtrup Physical review letters 110 (16), 167402, 2013 | 199 | 2013 |
| Dark states of single nitrogen-vacancy centers in diamond unraveled by single shot NMR G Waldherr, J Beck, M Steiner, P Neumann, A Gali, T Frauenheim, ... Physical review letters 106 (15), 157601, 2011 | 187 | 2011 |
| Theory of spin-conserving excitation of the N− V− center in diamond A Gali, E Janzén, P Deák, G Kresse, E Kaxiras Physical review letters 103 (18), 186404, 2009 | 165 | 2009 |
| Theoretical study of the mechanism of dry oxidation of 4 H-SiC JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke Physical Review B 71 (23), 235321, 2005 | 165 | 2005 |
| Defects in as the possible origin of near interface traps in the system: A systematic theoretical study JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke Physical Review B 72 (11), 115323, 2005 | 164 | 2005 |
| Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes A Gali Physical Review B 73 (24), 245415, 2006 | 156 | 2006 |
| The mechanism of defect creation and passivation at the SiC/SiO2 interface P Deak, JM Knaup, T Hornos, C Thill, A Gali, T Frauenheim Journal of Physics D: Applied Physics 40 (20), 6242, 2007 | 151 | 2007 |
| Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects P Deák, B Aradi, M Kaviani, T Frauenheim, A Gali Physical Review B 89 (7), 075203, 2014 | 145 | 2014 |
| Single-photon emitting diode in silicon carbide A Lohrmann, N Iwamoto, Z Bodrog, S Castelletto, T Ohshima, TJ Karle, ... Nature communications 6 (1), 1-7, 2015 | 141 | 2015 |
| Ab initio study of the split silicon-vacancy defect in diamond: Electronic structure and related properties A Gali, JR Maze Physical Review B 88 (23), 235205, 2013 | 139 | 2013 |
Marton VorosStaff Engineer, Samsung Semiconductor, IncE-mailová adresa ověřena na: samsung.com
