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Mohammad Ansari
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A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies
M Ansari, H Afzali-Kusha, B Ebrahimi, Z Navabi, A Afzali-Kusha, ...
Integration 50, 91-106, 2015
752015
An ultra low-power memristive neuromorphic circuit for Internet of Things smart sensors
A Fayyazi, M Ansari, M Kamal, A Afzali-Kusha, M Pedram
IEEE Internet of Things Journal 5 (2), 1011-1022, 2018
462018
PHAX: Physical Characteristics Aware Ex-Situ Training Framework for Inverter-Based Memristive Neuromorphic Circuits
M Ansari, A Fayyazi, A Banagozar, MA Maleki, M Kamal, A Afzali-Kusha, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2017
272017
OCTAN: An on-chip training algorithm for memristive neuromorphic circuits
M Ansari, A Fayyazi, M Kamal, A Afzali-Kusha, M Pedram
IEEE Transactions on Circuits and Systems I: Regular Papers 66 (12), 4687-4698, 2019
152019
Design of an ultra-low power 32-bit adder operating at subthreshold voltages in 45-nm FinFET
M Jafari, M Imani, M Ansari, M Fathipour, N Sehatbakhsh
2013 8th International Conference on Design & Technology of Integrated …, 2013
112013
Estimation of joint probability density function of delay and leakage power with variable skewness
M Ansari, M Imani, H Aghababa, B Forouzandeh
2013 International Conference on Electronics, Computer and Computation …, 2013
102013
Inverter-based memristive neuromorphic circuit for ultra-low-power IoT smart applications
A Fayyazi, M Ansari, M Kamal, A Afzali-Kusha, M Pedram
Hardware Architectures for Deep Learning, 265, 2020
2020
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