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Sieun Chae
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Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry
S Chae, K Mengle, JT Heron, E Kioupakis
Applied Physics Letters 113 (21), 212101, 2018
322018
Lattice transparency of graphene
S Chae, S Jang, WJ Choi, YS Kim, H Chang, TI Lee, JO Lee
Nano Letters 17 (3), 1711-1718, 2017
312017
Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping
S Chae, J Lee, KA Mengle, JT Heron, E Kioupakis
Applied Physics Letters 114 (10), 102104, 2019
272019
Quasiparticle band structure and optical properties of rutile GeO2, an ultra-wide-band-gap semiconductor
KA Mengle, S Chae, E Kioupakis
Journal of Applied Physics 126 (8), 085703, 2019
202019
Blocking of the 1T-to-2H phase transformation of chemically exfoliated transition metal disulfides by using a “lattice lock”
S Chae, SS Chae, M Choi, H min Park, H Chang, JO Lee, TI Lee
Nano energy 56, 65-73, 2019
182019
Electron and hole mobility of rutile GeO2 from first principles: An ultrawide-bandgap semiconductor for power electronics
K Bushick, KA Mengle, S Chae, E Kioupakis
Applied Physics Letters 117 (18), 182104, 2020
172020
Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility
K Bushick, S Chae, Z Deng, JT Heron, E Kioupakis
npj Computational Materials 6 (1), 1-7, 2020
172020
Thermal conductivity of rutile germanium dioxide
S Chae, KA Mengle, R Lu, A Olvera, N Sanders, J Lee, PFP Poudeu, ...
Applied Physics Letters 117 (10), 102106, 2020
162020
Encapsulation and enhanced delivery of topoisomerase I inhibitors in functionalized carbon nanotubes
S Chae, D Kim, K Lee, D Lee, YO Kim, YC Jung, SD Rhee, KR Kim, ...
Acs Omega 3 (6), 5938-5945, 2018
132018
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ...
Applied Physics Letters 118 (26), 260501, 2021
122021
Epitaxial stabilization of rutile germanium oxide thin film by molecular beam epitaxy
S Chae, H Paik, NM Vu, E Kioupakis, JT Heron
Applied Physics Letters 117 (7), 072105, 2020
102020
Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides
M Ahn, Y Park, SH Lee, S Chae, J Lee, JT Heron, E Kioupakis, WD Lu, ...
Advanced Electronic Materials 7 (5), 2001258, 2021
82021
Graphene as a thin-film catalyst booster: graphene-catalyst interface plays a critical role
S Chae, WJ Choi, SS Chae, S Jang, H Chang, TI Lee, YS Kim, JO Lee
Nanotechnology 28 (49), 495708, 2017
32017
Theoretical characterization and computational discovery of ultra-wide-band-gap semiconductors with predictive atomistic calculations
E Kioupakis, S Chae, K Bushick, N Pant, X Zhang, W Lee
Journal of Materials Research, 1-22, 2021
22021
Effects of local compositional and structural disorder on vacancy formation in entropy-stabilized oxides from first-principles
S Chae, L Williams, J Lee, JT Heron, E Kioupakis
npj Computational Materials 8 (1), 1-7, 2022
12022
Cation-size mismatch as a predictive descriptor for structural distortion, configurational disorder, and valence-band splitting in II-IV-N2 semiconductors
M Kute, Z Deng, S Chae, E Kioupakis
Applied Physics Letters 119 (13), 132104, 2021
12021
Germanium dioxide: A new rutile substrate for epitaxial film growth
S Chae, LA Pressley, H Paik, J Gim, D Werder, BH Goodge, LF Kourkoutis, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 40 (5 …, 2022
2022
Computational discovery of extreme-gap semiconductors
S Chae, N Sanders, K Mengle, J Heron, E Kioupakis
Bulletin of the American Physical Society, 2022
2022
Theoretical Discovery and Experimental Synthesis of Ultra-wide-band-gap Semiconductors for Power Electronics
S Chae
2022
Computational discovery of ultra-wide-band-gap semiconductors
E Kioupakis, S Chae, K Mengle, K Bushick, N Sanders, N Pant, S Dagli, ...
APS March Meeting Abstracts 2021, J56. 001, 2021
2021
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