| Radiation and photochemistry of onium salt acid generators in chemically amplified resists S Tagawa, S Nagahara, T Iwamoto, M Wakita, T Kozawa, Y Yamamoto, ... Advances in resist technology and processing XVII 3999, 204-213, 2000 | 171 | 2000 |
| Radiation-induced reactions of chemically amplified x-ray and electron-beam resists based on deprotection of -butoxycarbonyl groups T Kozawa, S Nagahara, Y Yoshida, S Tagawa, T Watanabe, Y Yamashita Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997 | 117 | 1997 |
| Pattern scaling with directed self assembly through lithography and etch process integration B Rathsack, M Somervell, J Hooge, M Muramatsu, K Tanouchi, T Kitano, ... Alternative Lithographic Technologies IV 8323, 52-65, 2012 | 77 | 2012 |
| Contact hole shrink process using graphoepitaxial directed self-assembly lithography Y Seino, H Yonemitsu, H Sato, M Kanno, H Kato, K Kobayashi, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 12 (3), 033011-033011, 2013 | 52 | 2013 |
| Contact hole shrink process using directed self-assembly Y Seino, H Yonemitsu, H Sato, M Kanno, H Kato, K Kobayashi, ... Alternative Lithographic Technologies IV 8323, 185-191, 2012 | 44 | 2012 |
| Advances in directed self assembly integration and manufacturability at 300 mm B Rathsack, M Somervell, M Muramatsu, K Tanouchi, T Kitano, ... Advances in Resist Materials and Processing Technology XXX 8682, 132-142, 2013 | 37 | 2013 |
| A manufacturable copper/low-k SiOC/SiCN process technology for 90 nm-node high performance eDRAM K Higashi, N Nakamura, H Miyajima, S Satoh, A Kojima, J Abe, ... Proceedings of the IEEE 2002 International Interconnect Technology …, 2002 | 33 | 2002 |
| Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography E Buitrago, S Nagahara, O Yildirim, H Nakagawa, S Tagawa, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (3), 033502-033502, 2016 | 32 | 2016 |
| High-volume manufacturing equipment and processing for directed self-assembly applications M Somervell, T Yamauchi, S Okada, T Tomita, T Nishi, E Iijima, T Nakano, ... Advances in Patterning Materials and Processes XXXI 9051, 125-135, 2014 | 32 | 2014 |
| Long-lived electron spins in InxGa1− xN multiquantum well S Nagahara, M Arita, Y Arakawa Applied Physics Letters 86 (24), 2005 | 30 | 2005 |
| Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition, and semiconductor substrate S Nagahara, T Sakurada, T Yoshihara US Patent 6,800,551, 2004 | 30 | 2004 |
| Novel high sensitivity EUV photoresist for sub-7 nm node T Nagai, H Nakagawa, T Naruoka, S Dei, S Tagawa, A Oshima, ... Journal of Photopolymer Science and Technology 29 (3), 475-478, 2016 | 29 | 2016 |
| Methods to improve radiation sensitivity of chemically amplified resists by using chain reactions of acid generation S Nagahara, Y Sakurai, M Wakita, Y Yamamoto, S Tagawa, M Komuro, ... Advances in Resist Technology and Processing XVII 3999, 386-394, 2000 | 29 | 2000 |
| Semiconductor device and method of manufacturing the same S Nagahara, K Shiba, N Hamanaka, T Usami, T Yokoyama US Patent App. 10/303,715, 2003 | 28 | 2003 |
| Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting S Nagahara, S Tagawa, A Oshima US Patent 10,025,187, 2018 | 27 | 2018 |
| Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure S Nagahara, M Carcasi, H Nakagawa, E Buitrago, O Yildirim, G Shiraishi, ... Extreme Ultraviolet (EUV) Lithography VII 9776, 40-57, 2016 | 27 | 2016 |
| Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process S Nagahara, M Hiroi US Patent 7,479,361, 2009 | 26 | 2009 |
| Understanding quencher mechanisms by considering photoacid-dissociation equilibrium in chemically amplified resists S Nagahara, L Yuan, WJ Poppe, A Neureuther, Y Kono, A Sekiguchi, ... Advances in Resist Technology and Processing XXII 5753, 338-349, 2005 | 26 | 2005 |
| Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition S Nagahara, S Watanabe, K Maeda US Patent 7,396,633, 2008 | 25 | 2008 |
| SMO for 28-nm logic device and beyond: impact of source and mask complexity on lithography performance S Nagahara, K Yoshimochi, H Yamazaki, K Takeda, T Uchiyama, S Hsu, ... Optical Microlithography XXIII 7640, 561-572, 2010 | 24 | 2010 |
