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| Two-dimensional semiconductors for transistors M Chhowalla, D Jena, H Zhang Nature Reviews Materials 1 (11), 1-15, 2016 | 1075 | 2016 |
| High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared W Choi, MY Cho, A Konar, JH Lee, GB Cha, SC Hong, S Kim, J Kim, ... Advanced materials 24 (43), 5832-5836, 2012 | 1065 | 2012 |
| Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ... Nature communications 3 (1), 780, 2012 | 1044 | 2012 |
| Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee Nano letters 13 (5), 1983-1990, 2013 | 974 | 2013 |
| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 904 | 2018 |
| Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ... ACS nano 7 (2), 1072-1080, 2013 | 793 | 2013 |
| Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors J Kang, W Liu, D Sarkar, D Jena, K Banerjee Physical Review X 4 (3), 031005, 2014 | 789 | 2014 |
| Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena Applied Physics Letters 91 (9), 092109, 2007 | 780 | 2007 |
| Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena Science 327 (5961), 60-64, 2010 | 756 | 2010 |
| High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande ACS nano 7 (6), 5446-5452, 2013 | 532 | 2013 |
| Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering D Jena, A Konar Physical review letters 98 (13), 136805, 2007 | 485 | 2007 |
| Charge scattering and mobility in atomically thin semiconductors N Ma, D Jena Physical Review X 4 (1), 011043, 2014 | 439 | 2014 |
| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 398 | 2012 |
| Anisotropic thermal conductivity in single crystal β-gallium oxide Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ... Applied Physics Letters 106 (11), 111909, 2015 | 393 | 2015 |
| High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ... Applied Physics Letters 104 (20), 203111, 2014 | 358 | 2014 |
| Intrinsic electron mobility limits in β-Ga2O3 N Ma, N Tanen, A Verma, Z Guo, T Luo, HG Xing, D Jena Applied Physics Letters 109 (21), 2016 | 351 | 2016 |
| Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors A Konar, T Fang, D Jena Physical Review B 82 (11), 115452, 2010 | 345 | 2010 |
| Polarization effects in semiconductors: from ab initio theory to device applications C Wood, D Jena Springer Science & Business Media, 2007 | 341 | 2007 |
| High-mobility window for two-dimensional electron gases at ultrathin heterojunctions Y Cao, D Jena Applied physics letters 90 (18), 182112, 2007 | 332 | 2007 |
