Ugur Serincan
Ugur Serincan
Professor
Verified email at eskisehir.edu.tr - Homepage
Title
Cited by
Cited by
Year
Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy
U Serincan, G Kartopu, A Guennes, TG Finstad, R Turan, Y Ekinci, ...
Semiconductor science and technology 19 (2), 247, 2003
632003
Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence
S Yerci, U Serincan, I Dogan, S Tokay, M Genisel, A Aydinli, R Turan
Journal of applied physics 100 (7), 074301, 2006
602006
Structural and optical properties of porous nanocrystalline Ge
G Kartopu, AV Sapelkin, VA Karavanskii, U Serincan, R Turan
Journal of Applied Physics 103 (11), 113518, 2008
442008
Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation
M Kulakci, U Serincan, R Turan
Semiconductor science and technology 21 (12), 1527, 2006
372006
Mechanisms of void formation in Ge implanted SiO2 films
ES Marstein, AE Gunnæs, U Serincan, S Jørgensen, A Olsen, R Turan, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam†…, 2003
362003
Spatial distribution of light-emitting centers in Si-implanted SiO2
U Serincan, G Aygun, R Turan
Journal of luminescence 113 (3-4), 229-234, 2005
352005
Can chemically etched germanium or germanium nanocrystals emit visible photoluminescence?
G Kartopu, VA Karavanskii, U Serincan, R Turan, RE Hummel, Y Ekinci, ...
physica status solidi (a) 202 (8), 1472-1476, 2005
342005
Nanocrystal and nanocluster formation and oxidation in annealed Ge-implanted SiO2 films
ES Marstein, AE Gunnæs, U Serincan, R Turan, A Olsen, TG Finstad
Surface and Coatings Technology 158, 544-547, 2002
302002
Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix
J Wang, M Righini, A Gnoli, S Foss, T Finstad, U Serincan, R Turan
Solid state communications 147 (11-12), 461-464, 2008
282008
Introduction of interface states by annealing -implanted films
ES Marstein, AE Gunnæs, A Olsen, TG Finstad, R Turan, U Serincan
Journal of applied physics 96 (8), 4308-4312, 2004
272004
Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs/GaSb superlattice photodiodes
T Tansel, K Kutluer, ÷ Salihoglu, A Aydinli, B Aslan, B Arikan, MC Kilinc, ...
IEEE Photonics Technology Letters 24 (9), 790-792, 2012
262012
Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation
U Serincan, M Kulakci, R Turan, S Foss, TG Finstad
Nuclear Instruments and Methods in Physics Research Section B: Beam†…, 2007
202007
The quantum confined Stark effect in silicon nanocrystals
M Kulakci, U Serincan, R Turan, TG Finstad
Nanotechnology 19 (45), 455403, 2008
192008
Evolution of SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation
U Serincan, S Yerci, M Kulakci, R Turan
Nuclear Instruments and Methods in Physics Research Section B: Beam†…, 2005
192005
Evolution of vibrational modes of SiO2 during the formation of Ge and Si nanocrystals by ion implantation and magnetron sputtering
A Gencer Imer, S Yerci, AS Alagoz, M Kulakci, U Serincan, TG Finstad, ...
Journal of Nanoscience and Nanotechnology 10 (1), 525-531, 2010
142010
Ion beam synthesis and characterization of Ge nanoparticles in SiO2
UV Desnica, M Buljan, P Dubcek, Z Siketic, IB Radovic, S Bernstorff, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam†…, 2006
142006
Electrical properties of nitrogen implanted GaSe single crystal
O Karabulut, M Parlak, R Turan, U Serincan, E Tasarkuyu, BG Akįnoglu
Crystal Research and Technology: Journal of Experimental and Industrial†…, 2003
132003
Formation of Ge nanocrystals in Al2O3 matrix
S Yerci, M Kulakci, U Serincan, R Turan, M Shandalov, Y Golan
Journal of nanoscience and nanotechnology 8 (2), 759-763, 2008
122008
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation
S Yerci, I Yildiz, M Kulakci, U Serincan, M Barozzi, M Bersani, R Turan
Journal of Applied Physics 102 (2), 024309, 2007
112007
On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses
B Arikan, G Korkmaz, YE Suyolcu, B Aslan, U Serincan
Thin solid films 548, 288-291, 2013
82013
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Articles 1–20