Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities GM Christian, S Schulz, MJ Kappers, CJ Humphreys, RA Oliver, ... Physical Review B 98 (15), 155301, 2018 | 15 | 2018 |
Optical spectroscopy and magnetic behaviour of Sm3+ and Eu3+ cations in Li6Eu1-xSmx (BO3) 3 solid solution R Belhoucif, M Velázquez, O Plantevin, P Aschehoug, P Goldner, ... Optical Materials 73, 658-665, 2017 | 13 | 2017 |
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells GM Christian, S Hammersley, MJ Davies, P Dawson, MJ Kappers, ... physica status solidi (c) 13 (5‐6), 248-251, 2016 | 8 | 2016 |
Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength GM Christian, S Schulz, S Hammersley, MJ Kappers, M Frentrup, ... Japanese Journal of Applied Physics 58 (SC), SCCB09, 2019 | 7 | 2019 |
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells G Christian, M Kappers, F Massabuau, C Humphreys, R Oliver, P Dawson Materials 11 (9), 1736, 2018 | 6 | 2018 |
Judd-Ofelt analysis of luminescence emission from Li6Eu1-xSmx (BO3) 3 single crystal R Belhoucif, M Velazquez, O Plantevin, P Aschehoug, P Goldner, ... AIP Conference Proceedings 1994 (1), 2018 | 2 | 2018 |
Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells SA Church, GM Christian, RM Barrett, S Hammersley, MJ Kappers, ... Journal of Physics D: Applied Physics 54 (47), 475104, 2021 | | 2021 |
Photoluminescence Studies of InGaN/GaN Quantum Well Structures GM Christian PQDT-UK & Ireland, 2019 | | 2019 |