Sledovat
Steven Kosier
Název
Citace
Citace
Rok
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
3731994
Charge separation for bipolar transistors
SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE transactions on nuclear science 40 (6), 1276-1285, 1993
2361993
Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs
SL Kosier, A Wei, RD Schrimpf, DM Fleetwood, MD DeLaus, RL Pease, ...
IEEE transactions on Electron Devices 42 (3), 436-444, 1995
1351995
Bounding the total-dose response of modern bipolar transistors
SL Kosier, WE Combs, A Wei, RA Schrimpf, DM Fleetwood, M DeLaus, ...
IEEE transactions on nuclear science 41 (6), 1864-1870, 1994
981994
Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters
A Wu, RD Schrimpf, HJ Barnaby, DM Fleetwood, RL Pease, SL Kosier
IEEE Transactions on Nuclear Science 44 (6), 1914-1921, 1997
661997
Dose‐rate effects on radiation‐induced bipolar junction transistor gain degradation
A Wei, SL Kosier, RD Schrimpf, DM Fleetwood, WE Combs
Applied physics letters 65 (15), 1918-1920, 1994
621994
Improved latch-up immunity in junction-isolated smart power ICs with unbiased guard ring
S Gupta, JC Beckman, SL Kosier
IEEE Electron Device Letters 22 (12), 600-602, 2001
462001
Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's
A Wei, SL Kosier, RD Schrimpf, WE Combs, M DeLaus
IEEE transactions on electron devices 42 (5), 923-927, 1995
421995
Effects of oxide charge and surface recombination velocity on the excess base current of BJTs
Koiser, Schrimpf, Wei, DeLaus, Fleetwood, Combs
1993 Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 211-214, 1993
401993
Guard ring structure for reducing crosstalk and latch-up in integrated circuits
S Gupta, SL Kosier, JC Beckman
US Patent 6,747,294, 2004
302004
Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control
HJ Barnaby, C Cirba, RD Schrimpf, S Kosier, P Fouillat, X Montagner
IEEE Transactions on Nuclear Science 46 (6), 1652-1659, 1999
271999
Modeling BJT radiation response with non-uniform energy distributions of interface traps
HJ Barnaby, C Cirba, RD Schrimpf, SL Kosier, P Fouillat, X Montagner
IEEE Transactions on Nuclear Science 47 (3), 514-518, 2000
232000
The effects of emitter-tied field plates on lateral PNP ionizing radiation response
HJ Barnaby, RD Schrimpf, DM Fleetwood, SL Kosier
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat …, 1998
191998
Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors
SC Witczak, SL Kosier, RD Schrimpf, KF Galloway
IEEE transactions on nuclear science 41 (6), 2412-2419, 1994
191994
System and method for defining a semiconductor device layout
P West, R Harlan, SL Kosier
US Patent 6,804,809, 2004
182004
Structure and system for simultaneous sensing a magnetic field and mechanical stress
S Kosier, G Delmain
US Patent 9,851,417, 2017
152017
Vertical hall effect sensor
S Kosier, N Hoilien
US Patent 9,312,473, 2016
152016
The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs
SL Kosier, RD Schrimpf, FE Cellier, KF Galloway
IEEE Transactions on Nuclear Science 37 (6), 2076-2082, 1990
151990
What's in store for silicon photoreceivers?
PB Espinase, SL Kosier
IEEE Circuits and Devices Magazine 20 (2), 23-31, 2004
142004
Bipolar junction transistor antifuse
KN Kimber, DD Litfin, J Burkhardt, SL Kosier
US Patent 7,071,533, 2006
112006
Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.
Články 1–20