| Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals A Parisini, R Fornari Semiconductor Science and Technology 31 (3), 035023, 2016 | 84 | 2016 |
| ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials chemistry and physics 205, 502-507, 2018 | 80 | 2018 |
| Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens A Parisini, A Bourret, A Armigliato, M Servidori, S Solmi, R Fabbri, ... Journal of applied physics 67 (5), 2320-2332, 1990 | 74 | 1990 |
| Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017 | 73 | 2017 |
| Optical absorption near the fundamental absorption edge in GaSb C Ghezzi, R Magnanini, A Parisini, B Rotelli, L Tarricone, A Bosacchi, ... Physical Review B 52 (3), 1463, 1995 | 66 | 1995 |
| Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation A Parisini, R Nipoti Journal of Applied Physics 114 (24), 243703, 2013 | 52 | 2013 |
| Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC R Nipoti, R Scaburri, A Hallén, A Parisini Journal of Materials Research 28 (1), 17-22, 2013 | 51 | 2013 |
| Influence of electron-beam parameters on the radiation-induced formation of graphitic onions G Lulli, A Parisini, G Mattei Ultramicroscopy 60 (2), 187-194, 1995 | 51 | 1995 |
| The electronic structure of ε-Ga2O3 M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ... APL Materials 7 (2), 022522, 2019 | 47 | 2019 |
| Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV R Ferrini, G Guizzetti, M Patrini, A Parisini, L Tarricone, B Valenti The European Physical Journal B-Condensed Matter and Complex Systems 27 (4 …, 2002 | 46 | 2002 |
| Experimental evidence of delocalization in correlated disorder superlattices V Bellani, E Diez, A Parisini, L Tarricone, R Hey, GB Parravicini, ... Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 823-826, 2000 | 43 | 2000 |
| Diamond hexagonal silicon phase and {113} defects Energy calculations and new defect models A Parisini, A Bourret Philosophical Magazine A 67 (3), 605-625, 1993 | 38 | 1993 |
| Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy A Bosacchi, S Franchi, P Allegri, V Avanzini, A Baraldi, C Ghezzi, ... Journal of crystal growth 150, 844-848, 1995 | 36 | 1995 |
| A study of the electrical properties controlled by residual acceptors in gallium antimonide F Meinardi, A Parisini, L Tarricone Semiconductor science and technology 8 (11), 1985, 1993 | 35 | 1993 |
| Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs M Longo, R Magnanini, A Parisini, L Tarricone, A Carbognani, C Bocchi, ... Journal of crystal growth 248, 119-123, 2003 | 34 | 2003 |
| Si and Sn doping of ε-Ga2O3 layers A Parisini, A Bosio, V Montedoro, A Gorreri, A Lamperti, M Bosi, G Garulli, ... APL Materials 7 (3), 031114, 2019 | 33 | 2019 |
| Porous silicon layer permeated with Sn–V mixed oxides for hydrocarbon sensor fabrication R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, G Pizzochero, ... Thin solid films 297 (1-2), 43-47, 1997 | 31 | 1997 |
| Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy A Baraldi, F Colonna, C Ghezzi, R Magnanini, A Parisini, L Tarricone, ... Semiconductor science and technology 11 (11), 1656, 1996 | 30 | 1996 |
| Influence of the electrolyte viscosity on the structural features of porous silicon M Servidori, C Ferrero, S Lequien, S Milita, A Parisini, R Romestain, ... Solid state communications 118 (2), 85-90, 2001 | 28 | 2001 |
| Assessment of phonon scattering-related mobility in β-Ga2O3 A Parisini, K Ghosh, U Singisetti, R Fornari Semiconductor Science and Technology 33 (10), 105008, 2018 | 26 | 2018 |
