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Sebastian Heedt
Sebastian Heedt
Microsoft Quantum
E-mailová adresa ověřena na: microsoft.com - Domovská stránka
Název
Citace
Citace
Rok
InAs-Al hybrid devices passing the topological gap protocol
M Aghaee, A Akkala, Z Alam, R Ali, A Alcaraz Ramirez, M Andrzejczuk, ...
Physical Review B 107 (24), 245423, 2023
1782023
Selectivity map for molecular beam epitaxy of advanced III–V quantum nanowire networks
P Aseev, A Fursina, F Boekhout, F Krizek, JE Sestoft, F Borsoi, S Heedt, ...
Nano Letters 19 (1), 218-227, 2018
1292018
Signatures of interaction-induced helical gaps in nanowire quantum point contacts
S Heedt, N Traverso Ziani, F Crépin, W Prost, S Trellenkamp, J Schubert, ...
Nature Physics 13 (6), 563-567, 2017
1032017
Parity transitions in the superconducting ground state of hybrid InSb–Al Coulomb islands
J Shen, S Heedt, F Borsoi, B Van Heck, S Gazibegovic, RLM Op het Veld, ...
Nature Communications 9 (1), 4801, 2018
832018
Shadow-wall lithography of ballistic superconductor–semiconductor quantum devices
S Heedt, M Quintero-Pérez, F Borsoi, A Fursina, N van Loo, GP Mazur, ...
Nature Communications 12 (1), 4914, 2021
742021
High mobility stemless InSb nanowires
G Badawy, S Gazibegovic, F Borsoi, S Heedt, CA Wang, S Koelling, ...
Nano Letters 19 (6), 3575-3582, 2019
672019
Ballistic transport and exchange interaction in InAs nanowire quantum point contacts
S Heedt, W Prost, J Schubert, D Grutzmacher, T Schäpers
Nano Letters 16 (5), 3116-3123, 2016
672016
Protocol to identify a topological superconducting phase in a three-terminal device
DI Pikulin, B van Heck, T Karzig, EA Martinez, B Nijholt, T Laeven, ...
arXiv preprint arXiv:2103.12217, 2021
512021
Electrical spin injection into InN semiconductor nanowires
S Heedt, C Morgan, K Weis, DE Burgler, R Calarco, H Hardtdegen, ...
Nano Letters 12 (9), 4437-4443, 2012
452012
Resolving ambiguities in nanowire field-effect transistor characterization
S Heedt, I Otto, K Sladek, H Hardtdegen, J Schubert, N Demarina, H Lüth, ...
Nanoscale 7 (43), 18188-18197, 2015
372015
Amphoteric nature of Sn in CdS nanowires
M Zhang, M Wille, R Röder, S Heedt, L Huang, Z Zhu, S Geburt, ...
Nano Letters 14 (2), 518-523, 2014
352014
Weak (anti) localization in tubular semiconductor nanowires with spin-orbit coupling
M Kammermeier, P Wenk, J Schliemann, S Heedt, T Schäpers
Physical Review B 93 (20), 205306, 2016
342016
Adiabatic edge channel transport in a nanowire quantum point contact register
S Heedt, A Manolescu, GA Nemnes, W Prost, J Schubert, D Grutzmacher, ...
Nano Letters 16 (7), 4569-4575, 2016
322016
Crystal phase transformation in self-assembled InAs nanowire junctions on patterned Si substrates
T Rieger, D Rosenbach, D Vakulov, S Heedt, T Schäpers, ...
Nano Letters 16 (3), 1933-1941, 2016
322016
Full parity phase diagram of a proximitized nanowire island
J Shen, GW Winkler, F Borsoi, S Heedt, V Levajac, JY Wang, D van Driel, ...
Physical Review B 104 (4), 045422, 2021
302021
Spin‐Mixing Enhanced Proximity Effect in Aluminum‐Based Superconductor–Semiconductor Hybrids
GP Mazur, N van Loo, JY Wang, T Dvir, G Wang, A Khindanov, ...
Advanced Materials 34 (33), 2202034, 2022
282022
Single‐Shot Fabrication of Semiconducting–Superconducting Nanowire Devices
F Borsoi, GP Mazur, N van Loo, MP Nowak, L Bourdet, K Li, S Korneychuk, ...
Advanced Functional Materials 31 (34), 2102388, 2021
232021
Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices
JY Wang, N Van Loo, GP Mazur, V Levajac, FK Malinowski, M Lemang, ...
Physical Review B 106 (7), 075306, 2022
212022
Interferometric single-shot parity measurement in InAs–Al hybrid devices
Microsoft Azure Quantum, M Aghaee, A Alcaraz Ramirez, Z Alam, R Ali, ...
Nature 638 (8051), 651-655, 2025
172025
Transmission phase read-out of a large quantum dot in a nanowire interferometer
F Borsoi, K Zuo, S Gazibegovic, RLM Op het Veld, EPAM Bakkers, ...
Nature Communications 11 (1), 3666, 2020
172020
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