Stephen A. Lyon
Stephen A. Lyon
Professor of Electrical Engineering, Princeton University
Verified email at - Homepage
TitleCited byYear
Hardware design experiences in ZebraNet
P Zhang, CM Sadler, SA Lyon, M Martonosi
Proceedings of the 2nd international conference on Embedded networked sensor …, 2004
Fabrication of linewidth and pitch features by nanoimprint lithography
MD Austin, H Ge, W Wu, M Li, Z Yu, D Wasserman, SA Lyon, SY Chou
Applied Physics Letters 84 (26), 5299-5301, 2004
Electron spin coherence exceeding seconds in high-purity silicon
AM Tyryshkin, S Tojo, JJL Morton, H Riemann, NV Abrosimov, P Becker, ...
Nature materials 11 (2), 143-147, 2012
Electron spin relaxation times of phosphorus donors in silicon
AM Tyryshkin, SA Lyon, AV Astashkin, AM Raitsimring
Physical Review B 68 (19), 193207, 2003
Solid-state quantum memory using the 31 P nuclear spin
JJL Morton, AM Tyryshkin, RM Brown, S Shankar, BW Lovett, A Ardavan, ...
Nature 455 (7216), 1085-1088, 2008
Embracing the quantum limit in silicon computing
JJL Morton, DR McCamey, MA Eriksson, SA Lyon
Nature 479 (7373), 345-353, 2011
Mid-infrared photoconductivity in InAs quantum dots
KW Berryman, SA Lyon, M Segev
Applied Physics Letters 70 (14), 1861-1863, 1997
Spectroscopy of hot carriers in semiconductors
SA Lyon
Journal of luminescence 35 (3), 121-154, 1986
Bang–bang control of fullerene qubits using ultrafast phase gates
JJL Morton, AM Tyryshkin, A Ardavan, SC Benjamin, K Porfyrakis, ...
Nature Physics 2 (1), 40-43, 2006
Towards a fullerene-based quantum computer
SC Benjamin, A Ardavan, GAD Briggs, DA Britz, D Gunlycke, J Jefferson, ...
Journal of Physics: Condensed Matter 18 (21), S867, 2006
6 nm half-pitch lines and 0.04 µm2 static random access memory patterns by nanoimprint lithography
MD Austin, W Zhang, H Ge, D Wasserman, SA Lyon, SY Chou
Nanotechnology 16 (8), 1058, 2005
Atomic clock transitions in silicon-based spin qubits
G Wolfowicz, AM Tyryshkin, RE George, H Riemann, NV Abrosimov, ...
Nature nanotechnology 8 (8), 561, 2013
Hot-electron relaxation in GaAs quantum wells
CH Yang, JM Carlson-Swindle, SA Lyon, JM Worlock
Physical review letters 55 (21), 2359, 1985
Coherence of spin qubits in silicon
AM Tyryshkin, JJL Morton, SC Benjamin, A Ardavan, GAD Briggs, ...
Journal of Physics: Condensed Matter 18 (21), S783, 2006
Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon
ST Chang, NM Johnson, SA Lyon
Applied physics letters 44 (3), 316-318, 1984
Spin Manipulation of Free Two-Dimensional Electrons in Quantum Wells
AM Tyryshkin, SA Lyon, W Jantsch, F Schäffler
Physical review letters 94 (12), 126802, 2005
Grating enhanced quantum well detector
KW Goossen, SA Lyon
Applied physics letters 47 (12), 1257-1259, 1985
Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures
SJ Wang, JM Sung, SA Lyon
Applied physics letters 52 (17), 1431-1433, 1988
Electron spin relaxation of in
JJL Morton, AM Tyryshkin, A Ardavan, K Porfyrakis, SA Lyon, ...
The Journal of chemical physics 124 (1), 014508, 2006
Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon
T Schenkel, JA Liddle, A Persaud, AM Tyryshkin, SA Lyon, R De Sousa, ...
Applied Physics Letters 88 (11), 112101, 2006
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