| Ambipolar electrical transport in semiconducting single-wall carbon nanotubes R Martel, V Derycke, C Lavoie, J Appenzeller, KK Chan, J Tersoff, ... Physical review letters 87 (25), 256805, 2001 | 1037 | 2001 |
| Towards implementation of a nickel silicide process for CMOS technologies C Lavoie, FM d’Heurle, C Detavernier, C Cabral Jr Microelectronic Engineering 70 (2-4), 144-157, 2003 | 499 | 2003 |
| Self-aligned process for nanotube/nanowire FETs P Avouris, RA Carruthers, J Chen, CGMM Detavernier, C Lavoie, ... US Patent 8,119,466, 2012 | 490 | 2012 |
| Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation J Kedzierski, E Nowak, T Kanarsky, Y Zhang, D Boyd, R Carruthers, ... Digest. International Electron Devices Meeting,, 247-250, 2002 | 284 | 2002 |
| Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ... IEEE Electron Device Letters 31 (7), 731-733, 2010 | 281 | 2010 |
| Thin film reaction of transition metals with germanium S Gaudet, C Detavernier, AJ Kellock, P Desjardins, C Lavoie Journal of Vacuum Science & Technology A 24 (3), 474-485, 2006 | 276 | 2006 |
| High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ... IEEE Electron Device Letters 31 (4), 275-277, 2010 | 238 | 2010 |
| An off-normal fibre-like texture in thin films on single-crystal substrates C Detavernier, AS Özcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, ... Nature 426 (6967), 641-645, 2003 | 234 | 2003 |
| Field-emission SEM imaging of compositional and doping layer semiconductor superlattices DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole Ultramicroscopy 58 (1), 104-113, 1995 | 228 | 1995 |
| In-situ X-ray diffraction study of metal induced crystallization of amorphous silicon W Knaepen, C Detavernier, RL Van Meirhaeghe, JJ Sweet, C Lavoie Thin Solid Films 516 (15), 4946-4952, 2008 | 185 | 2008 |
| Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition H Kim, C Cabral Jr, C Lavoie, SM Rossnagel Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 165 | 2002 |
| Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films C Lavoie, C Detavernier, C Cabral Jr, FM d’Heurle, AJ Kellock, ... Microelectronic engineering 83 (11-12), 2042-2054, 2006 | 149 | 2006 |
| High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation D Deduytsche, C Detavernier, RL Van Meirhaeghe, C Lavoie Journal of applied physics 98 (3), 2005 | 133 | 2005 |
| FinFET performance advantage at 22nm: An AC perspective M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, ... 2008 Symposium on VLSI Technology, 12-13, 2008 | 123 | 2008 |
| Influence of Pt addition on the texture of NiSi on Si (001) C Detavernier, C Lavoie applied physics letters 84 (18), 3549-3551, 2004 | 120 | 2004 |
| Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap SR Johnson, C Lavoie, MK Nissen, JT Tiedje US Patent 5,388,909, 1995 | 120 | 1995 |
| In situ x-ray diffraction study of metal induced crystallization of amorphous germanium W Knaepen, S Gaudet, C Detavernier, RL Van Meirhaeghe, JJ Sweet, ... Journal of Applied Physics 105 (8), 2009 | 119 | 2009 |
| Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy SR Johnson, C Lavoie, T Tiedje, JA Mackenzie Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 117 | 1993 |
| Two gates are better than one [double-gate MOSFET process] PM Solomon, KW Guarini, Y Zhang, K Chan, EC Jones, GM Cohen, ... IEEE circuits and devices magazine 19 (1), 48-62, 2003 | 112 | 2003 |
| Triple-self-aligned, planar double-gate MOSFETs: devices and circuits KW Guarini, PM Solomon, Y Zhang, KK Chan, EC Jones, GM Cohen, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 105 | 2001 |
