| The germanium quantum information route G Scappucci, C Kloeffel, FA Zwanenburg, D Loss, M Myronov, JJ Zhang, ... Nature Reviews Materials, 1-18, 2020 | 252 | 2020 |
| Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ... Applied physics letters 102 (19), 192103, 2013 | 191 | 2013 |
| Ohmic contacts to n-type germanium with low specific contact resistivity K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley Applied Physics Letters 100 (2), 022113, 2012 | 119 | 2012 |
| Experimental Demonstration of Room-Temperature Spin Transport in -Type Germanium Epilayers S Dushenko, M Koike, Y Ando, T Shinjo, M Myronov, M Shiraishi Physical review letters 114 (19), 196602, 2015 | 109 | 2015 |
| Ultra-high hole mobility exceeding one million in a strained germanium quantum well A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ... Applied Physics Letters 101 (17), 172108, 2012 | 104 | 2012 |
| Reverse graded relaxed buffers for high Ge content SiGe virtual substrates VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley Applied Physics Letters 93 (19), 192103, 2008 | 103 | 2008 |
| Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm RE Warburton, G Intermite, M Myronov, P Allred, DR Leadley, K Gallacher, ... IEEE Transactions on Electron Devices 60 (11), 3807-3813, 2013 | 100 | 2013 |
| Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates VA Shah, A Dobbie, M Myronov, DR Leadley Journal of Applied Physics 107 (6), 064304, 2010 | 95 | 2010 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 223704, 2013 | 93 | 2013 |
| Mobility spectrum computational analysis using a maximum entropy approach S Kiatgamolchai, M Myronov, OA Mironov, VG Kantser, EHC Parker, ... Physical Review E 66 (3), 036705, 2002 | 92 | 2002 |
| High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate VA Shah, A Dobbie, M Myronov, DR Leadley Solid-State Electronics 62 (1), 189-194, 2011 | 80 | 2011 |
| Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ... Optics letters 36 (21), 4158-4160, 2011 | 69 | 2011 |
| Extremely high room-temperature two-dimensional hole gas mobility in p-type modulation-doped heterostructures M Myronov, T Irisawa, OA Mironov, S Koh, Y Shiraki, TE Whall, ... Applied physics letters 80 (17), 3117-3119, 2002 | 67 | 2002 |
| Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas C Morrison, P Wi¶niewski, SD Rhead, J Foronda, DR Leadley, M Myronov Applied Physics Letters 105 (18), 182401, 2014 | 58 | 2014 |
| Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers F Pezzoli, A Giorgioni, D Patchett, M Myronov Acs Photonics 3 (11), 2004-2009, 2016 | 56 | 2016 |
| Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures T Irisawa, M Myronov, OA Mironov, EHC Parker, K Nakagawa, M Murata, ... Applied Physics Letters 82 (9), 1425-1427, 2003 | 56 | 2003 |
| Uprooting defects to enable high-performance III–V optoelectronic devices on silicon YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ... Nature communications 10 (1), 1-12, 2019 | 54 | 2019 |
| Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001) VA Shah, A Dobbie, M Myronov, DR Leadley Thin Solid Films 519 (22), 7911-7917, 2011 | 53 | 2011 |
| Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures M Myronov, K Sawano, Y Shiraki, T Mouri, KM Itoh Applied Physics Letters 91 (8), 082108, 2007 | 49 | 2007 |
| High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth RJH Morris, TJ Grasby, R Hammond, M Myronov, OA Mironov, ... Semiconductor science and technology 19 (10), L106, 2004 | 48 | 2004 |
