Hall hole mobility in boron-doped homoepitaxial diamond J Pernot, PN Volpe, F Omnès, P Muret, V Mortet, K Haenen, T Teraji Physical Review B—Condensed Matter and Materials Physics 81 (20), 205203, 2010 | 187 | 2010 |
Surface acoustic wave propagation in aluminum nitride-unpolished freestanding diamond structures V Mortet, O Elmazria, M Nesladek, MB Assouar, G Vanhoyland, J D’Haen, ... Applied Physics Letters 81 (9), 1720-1722, 2002 | 139 | 2002 |
Recent developments of wide-bandgap semiconductor based UV sensors A Benmoussa, A Soltani, U Schühle, K Haenen, YM Chong, WJ Zhang, ... Diamond and Related Materials 18 (5-8), 860-864, 2009 | 117 | 2009 |
Insight into boron-doped diamond Raman spectra characteristic features V Mortet, ZV Živcová, A Taylor, O Frank, P Hubík, D Trémouilles, F Jomard, ... Carbon 115, 279-284, 2017 | 115 | 2017 |
5GHz surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography P Kirsch, MB Assouar, O Elmazria, V Mortet, P Alnot Applied Physics Letters 88 (22), 2006 | 114 | 2006 |
LYRA, a solar UV radiometer on Proba2 JF Hochedez, W Schmutz, Y Stockman, U Schühle, A Benmoussa, ... Advances in Space Research 37 (2), 303-312, 2006 | 98 | 2006 |
High velocity SAW using aluminum nitride film on unpolished nucleation side of free-standing CVD diamond O Elmazria, V Mortet, M El Hakiki, M Nesladek, P Alnot IEEE transactions on ultrasonics, ferroelectrics, and frequency control 50 …, 2003 | 96 | 2003 |
High-frequency surface acoustic wave devices based on AlN/diamond layered structure realized using e-beam lithography MB Assouar, O Elmazria, P Kirsch, P Alnot, V Mortet, C Tiusan Journal of Applied Physics 101 (11), 2007 | 90 | 2007 |
Physical properties of polycrystalline aluminium nitride films deposited by magnetron sputtering V Mortet, M Nesladek, K Haenen, A Morel, M D'Olieslaeger, M Vanecek Diamond and related materials 13 (4-8), 1120-1124, 2004 | 84 | 2004 |
Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs V Uhnevionak, A Burenkov, C Strenger, G Ortiz, E Bedel-Pereira, V Mortet, ... IEEE Transactions on Electron Devices 62 (8), 2562-2570, 2015 | 81 | 2015 |
Fabrication of porous boron-doped diamond on SiO2 fiber templates V Petrák, ZV Živcová, H Krýsová, O Frank, A Zukal, L Klimša, J Kopeček, ... Carbon 114, 457-464, 2017 | 80 | 2017 |
Analysis of heavily boron-doped diamond Raman spectrum V Mortet, A Taylor, ZV Živcová, D Machon, O Frank, P Hubík, ... Diamond and Related Materials 88, 163-166, 2018 | 77 | 2018 |
ZnO/AlN/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient M El Hakiki, O Elmazria, MB Assouar, V Mortet, L Le Brizoual, M Vanecek, ... Diamond and related materials 14 (3-7), 1175-1178, 2005 | 72 | 2005 |
Aluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications V Mortet, A Vasin, PY Jouan, O Elmazria, MA Djouadi Surface and coatings technology 176 (1), 88-92, 2003 | 72 | 2003 |
Characterization of boron doped diamond epilayers grown in a NIRIM type reactor V Mortet, M Daenen, T Teraji, A Lazea, V Vorlicek, J D'Haen, K Haenen, ... Diamond and Related Materials 17 (7-10), 1330-1334, 2008 | 71 | 2008 |
Wide range pressure sensor based on a piezoelectric bimorph microcantilever V Mortet, R Petersen, K Haenen, M D’Olieslaeger Applied Physics Letters 88 (13), 2006 | 69 | 2006 |
Porous boron doped diamond for dopamine sensing: Effect of boron doping level on morphology and electrochemical performance S Baluchova, A Taylor, V Mortet, S Sedlakova, L Klimša, J Kopeček, ... Electrochimica Acta 327, 135025, 2019 | 62 | 2019 |
Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy V Mortet, ZV Živcová, A Taylor, M Davydová, O Frank, P Hubík, J Lorincik, ... Diamond and Related Materials 93, 54-58, 2019 | 62 | 2019 |
Diamond: a material for acoustic devices V Mortet, OA Williams, K Haenen physica status solidi (a) 205 (5), 1009-1020, 2008 | 59 | 2008 |
New perspectives for heavily boron-doped diamond Raman spectrum analysis V Mortet, I Gregora, A Taylor, N Lambert, P Ashcheulov, Z Gedeonova, ... Carbon 168, 319-327, 2020 | 58 | 2020 |