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Vincent Mortet
Vincent Mortet
Institute of Physics, AS CR v.v.i.
E-mailová adresa ověřena na: fzu.cz
Název
Citace
Citace
Rok
Hall hole mobility in boron-doped homoepitaxial diamond
J Pernot, PN Volpe, F Omnès, P Muret, V Mortet, K Haenen, T Teraji
Physical Review B 81 (20), 205203, 2010
1782010
Surface acoustic wave propagation in aluminum nitride-unpolished freestanding diamond structures
V Mortet, O Elmazria, M Nesladek, MB Assouar, G Vanhoyland, J D’Haen, ...
Applied Physics Letters 81 (9), 1720-1722, 2002
1322002
Recent developments of wide-bandgap semiconductor based UV sensors
A Benmoussa, A Soltani, U Schühle, K Haenen, YM Chong, WJ Zhang, ...
Diamond and Related Materials 18 (5-8), 860-864, 2009
1092009
Insight into boron-doped diamond Raman spectra characteristic features
V Mortet, ZV Živcová, A Taylor, O Frank, P Hubík, D Trémouilles, F Jomard, ...
Carbon 115, 279-284, 2017
1082017
5GHz surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography
P Kirsch, MB Assouar, O Elmazria, V Mortet, P Alnot
Applied Physics Letters 88 (22), 2006
1062006
LYRA, a solar UV radiometer on Proba2
JF Hochedez, W Schmutz, Y Stockman, U Schühle, A Benmoussa, ...
Advances in Space Research 37 (2), 303-312, 2006
952006
High velocity SAW using aluminum nitride film on unpolished nucleation side of free-standing CVD diamond
O Elmazria, V Mortet, M El Hakiki, M Nesladek, P Alnot
IEEE transactions on ultrasonics, ferroelectrics, and frequency control 50 …, 2003
942003
High-frequency surface acoustic wave devices based on AlN/diamond layered structure realized using e-beam lithography
MB Assouar, O Elmazria, P Kirsch, P Alnot, V Mortet, C Tiusan
Journal of Applied Physics 101 (11), 2007
852007
Physical properties of polycrystalline aluminium nitride films deposited by magnetron sputtering
V Mortet, M Nesladek, K Haenen, A Morel, M D'Olieslaeger, M Vanecek
Diamond and related materials 13 (4-8), 1120-1124, 2004
822004
Fabrication of porous boron-doped diamond on SiO2 fiber templates
V Petrák, ZV Živcová, H Krýsová, O Frank, A Zukal, L Klimša, J Kopeček, ...
Carbon 114, 457-464, 2017
762017
Aluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications
V Mortet, A Vasin, PY Jouan, O Elmazria, MA Djouadi
Surface and coatings technology 176 (1), 88-92, 2003
722003
ZnO/AlN/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient
M El Hakiki, O Elmazria, MB Assouar, V Mortet, L Le Brizoual, M Vanecek, ...
Diamond and related materials 14 (3-7), 1175-1178, 2005
712005
Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
V Uhnevionak, A Burenkov, C Strenger, G Ortiz, E Bedel-Pereira, V Mortet, ...
IEEE Transactions on Electron Devices 62 (8), 2562-2570, 2015
702015
Analysis of heavily boron-doped diamond Raman spectrum
V Mortet, A Taylor, ZV Živcová, D Machon, O Frank, P Hubík, ...
Diamond and Related Materials 88, 163-166, 2018
672018
Characterization of boron doped diamond epilayers grown in a NIRIM type reactor
V Mortet, M Daenen, T Teraji, A Lazea, V Vorlicek, J D'Haen, K Haenen, ...
Diamond and Related Materials 17 (7-10), 1330-1334, 2008
672008
Wide range pressure sensor based on a piezoelectric bimorph microcantilever
V Mortet, R Petersen, K Haenen, M D’Olieslaeger
Applied Physics Letters 88 (13), 2006
652006
Porous boron doped diamond for dopamine sensing: Effect of boron doping level on morphology and electrochemical performance
S Baluchova, A Taylor, V Mortet, S Sedlakova, L Klimša, J Kopeček, ...
Electrochimica Acta 327, 135025, 2019
572019
Diamond: a material for acoustic devices
V Mortet, OA Williams, K Haenen
physica status solidi (a) 205 (5), 1009-1020, 2008
542008
Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy
V Mortet, ZV Živcová, A Taylor, M Davydová, O Frank, P Hubík, J Lorincik, ...
Diamond and Related Materials 93, 54-58, 2019
532019
Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure
N Tiercelin, A Talbi, V Preobrazhensky, P Pernod, V Mortet, K Haenen, ...
Applied Physics Letters 93 (16), 2008
532008
Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.
Články 1–20