| Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ... Journal of Physics D: Applied Physics 47 (17), 175103, 2014 | 87 | 2014 |
| Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN E Sakalauskas, H Behmenburg, C Hums, P Schley, G Rossbach, ... Journal of Physics D: Applied Physics 43 (36), 365102, 2010 | 86 | 2010 |
| Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates N Ketteniss, LR Khoshroo, M Eickelkamp, M Heuken, H Kalisch, ... Semiconductor science and technology 25 (7), 075013, 2010 | 86 | 2010 |
| Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan Applied Physics Express 4 (11), 114102, 2011 | 85 | 2011 |
| The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ... Semiconductor Science and Technology 29 (11), 115012, 2014 | 75 | 2014 |
| P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers H Hahn, B Reuters, A Pooth, B Holländer, M Heuken, H Kalisch, A Vescan IEEE transactions on electron devices 60 (10), 3005-3011, 2013 | 75 | 2013 |
| Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2 DS Schneider, A Grundmann, A Bablich, V Passi, S Kataria, H Kalisch, ... Acs Photonics 7 (6), 1388-1395, 2020 | 70 | 2020 |
| First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors H Hahn, B Reuters, S Kotzea, G Lükens, S Geipel, H Kalisch, A Vescan 72nd Device Research Conference, 259-260, 2014 | 61 | 2014 |
| Chemical vapor deposition of organic-inorganic bismuth-based perovskite films for solar cell application S Sanders, D Stümmler, P Pfeiffer, N Ackermann, G Simkus, M Heuken, ... Scientific reports 9 (1), 9774, 2019 | 60 | 2019 |
| Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si (111) by metal-organic chemical-vapor deposition D Wang, S Jia, KJ Chen, KM Lau, Y Dikme, P Van Gemmern, YC Lin, ... Journal of applied physics 97 (5), 2005 | 56 | 2005 |
| Self-aligned process for selectively etched p-GaN-gated AlGaN/GaN-on-Si HFETs G Lükens, H Hahn, H Kalisch, A Vescan IEEE Transactions on Electron Devices 65 (9), 3732-3738, 2018 | 49 | 2018 |
| Investigation of large-area OLED devices with various grid geometries M Slawinski, M Weingarten, M Heuken, A Vescan, H Kalisch Organic Electronics 14 (10), 2387-2391, 2013 | 47 | 2013 |
| Luminescence and stimulated emission from GaN on silicon substrates heterostructures GP Yablonskii, EV Lutsenko, VN Pavlovskii, VZ Zubialevich, AL Gurskii, ... physica status solidi (a) 192 (1), 54-59, 2002 | 46 | 2002 |
| Polarization-engineered enhancement-mode high-electron-mobility transistors using quaternary AlInGaN barrier layers B Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ... Journal of electronic materials 42, 826-832, 2013 | 45 | 2013 |
| Scalable Large-Area p–i–n Light-Emitting Diodes Based on WS2 Monolayers Grown via MOCVD D Andrzejewski, H Myja, M Heuken, A Grundmann, H Kalisch, A Vescan, ... ACS Photonics 6 (8), 1832-1839, 2019 | 44 | 2019 |
| Electrothermal characterization of large-area organic light-emitting diodes employing finite-element simulation M Slawinski, D Bertram, M Heuken, H Kalisch, A Vescan Organic Electronics 12 (8), 1399-1405, 2011 | 44 | 2011 |
| Demonstration of a GaN-based vertical-channel JFET fabricated by selective-area regrowth S Kotzea, A Debald, M Heuken, H Kalisch, A Vescan IEEE Transactions on Electron Devices 65 (12), 5329-5336, 2018 | 43 | 2018 |
| First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET H Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ... Semiconductor Science and Technology 27 (5), 055004, 2012 | 43 | 2012 |
| Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT F Lecourt, A Agboton, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ... IEEE Electron Device Letters 34 (8), 978-980, 2013 | 42 | 2013 |
| Crystal growth and properties of LiAlO2 and nonpolar GaN on LiAlO2 substrate M Chou, DR Hang, H Kalisch, RH Jansen, Y Dikme, M Heuken, ... Journal of applied physics 101 (10), 2007 | 41 | 2007 |
