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Behzad Ebrahimi
Behzad Ebrahimi
Assistant Professor of Electrical Engineering, Science & Research Branch, Islamic Azad University
Verified email at srbiau.ac.ir - Homepage
Title
Cited by
Cited by
Year
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies
M Ansari, H Afzali-Kusha, B Ebrahimi, Z Navabi, A Afzali-Kusha, ...
Integration 50, 91-106, 2015
772015
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement
M Saremi, B Ebrahimi, A Afzali-Kusha, S Mohammadi
Microelectronics Reliability 51 (12), 2069-2076, 2011
492011
Statistical design optimization of FinFET SRAM using back-gate voltage
B Ebrahimi, M Rostami, A Afzali-Kusha, M Pedram
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 19 (10 …, 2010
382010
Process variation study of ground plane SOI MOSFET
M Saremi, B Ebrahimi, AA Kusha, M Saremi
2nd Asia symposium on quality electronic design (ASQED), 66-69, 2010
372010
A single-ended low leakage and low voltage 10T SRAM cell with high yield
N Eslami, B Ebrahimi, E Shakouri, D Najafi
362020
Ground plane SOI MOSFET based SRAM with consideration of process variation
M Saremi, B Ebrahimi, A Afzali-Kusha
2010 IEEE international conference of electron devices and solid-state …, 2010
302010
Low standby power and robust FinFET based SRAM design
B Ebrahimi, S Zeinolabedinzadeh, A Afzali-Kusha
2008 IEEE Computer Society Annual Symposium on VLSI, 185-190, 2008
282008
Single-Ended 10T SRAM Cell with High Yield and Low Standby Power
E Shakouri, B Ebrahimi, N Eslami, M Chahardori
Circuits, Systems, and Signal Processing, 1-21, 2021
242021
A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology
S Sayyah Ensan, MH Moaiyeri, B Ebrahimi, S Hessabi, A Afzali-Kusha
Journal of Computational Electronics 18, 519-526, 2019
232019
A robust and low power 7T SRAM cell design
K Mehrabi, B Ebrahimi, A Afzali-Kusha
2015 18th CSI International Symposium on Computer Architecture and Digital …, 2015
232015
Robust FinFET SRAM design based on dynamic back-gate voltage adjustment
B Ebrahimi, A Afzali-Kusha, H Mahmoodi
Microelectronics Reliability 54 (11), 2604-2612, 2014
232014
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems
H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh
IEICE Electronics Express 9 (10), 881-887, 2012
212012
Probability calculation of read failures in nano-scaled SRAM cells under process variations
H Aghababa, B Ebrahimi, A Afzali-Kusha, M Pedram
Microelectronics Reliability 52 (11), 2805-2811, 2012
182012
Low power and robust 8T/10T subthreshold SRAM cells
B Ebrahimi, H Afzali-Kusha, A Afzali-Kusha
2012 International Conference on Synthesis, Modeling, Analysis and …, 2012
152012
A high speed subthreshold SRAM cell design
AR Ahmadimehr, B Ebrahimi, A Afzali-Kusha
2009 1st Asia Symposium on Quality Electronic Design, 9-13, 2009
152009
Realistic CNFET based SRAM cell design for better write stability
B Ebrahimi, A Afzali-Kusha
2009 1st Asia Symposium on Quality Electronic Design, 14-18, 2009
122009
Ultra-low power FinFET based SRAM cell employing sharing current concept
M Imani, M Jafari, B Ebrahimi, TS Rosing
Microelectronics Reliability, 2015
112015
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages
B Ebrahimi, R Asadpour, A Afzali‐Kusha, M Pedram
International Journal of Circuit Theory and Applications 43 (12), 2011-2024, 2015
92015
Low‐power data encoding/decoding for energy‐efficient static random access memory design
G Pasandi, K Mehrabi, B Ebrahimi, SM Fakhraei, A Afzali‐Kusha, ...
IET Circuits, Devices & Systems 13 (8), 1152-1159, 2019
82019
An accurate analytical I–V model for sub-90-nm MOSFETs and its application to read static noise margin modeling
B Afzal, B Ebrahimi, A Afzali-Kusha, M Pedram
Journal of Zhejiang University SCIENCE C 13, 58-70, 2012
72012
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