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Nocona Sanders
Nocona Sanders
Verified email at umich.edu
Title
Cited by
Cited by
Year
Electronic and optical properties of two-dimensional GaN from first-principles
N Sanders, D Bayerl, G Shi, KA Mengle, E Kioupakis
Nano letters 17 (12), 7345-7349, 2017
1282017
Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections
K Bushick, K Mengle, N Sanders, E Kioupakis
Applied Physics Letters 114 (2), 022101, 2019
432019
Time reversal symmetry breaking superconductivity in topological materials
Y Qiu, KN Sanders, J Dai, JE Medvedeva, W Wu, P Ghaemi, T Vojta, ...
arXiv preprint arXiv:1512.03519, 2015
312015
Deep ultraviolet luminescence due to extreme confinement in monolayer GaN/Al (Ga) N nanowire and planar heterostructures
A Aiello, Y Wu, A Pandey, P Wang, W Lee, D Bayerl, N Sanders, Z Deng, ...
Nano Letters 19 (11), 7852-7858, 2019
292019
Thermal conductivity of rutile germanium dioxide
S Chae, KA Mengle, R Lu, A Olvera, N Sanders, J Lee, PFP Poudeu, ...
Applied Physics Letters 117 (10), 102106, 2020
162020
Electronic and optical properties of two-dimensional α-PbO from first principles
S Das, G Shi, N Sanders, E Kioupakis
Chemistry of Materials 30 (20), 7124-7129, 2018
162018
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ...
Applied Physics Letters 118 (26), 260501, 2021
122021
Phonon-and defect-limited electron and hole mobility of diamond and cubic boron nitride: A critical comparison
N Sanders, E Kioupakis
Applied Physics Letters 119 (6), 062101, 2021
82021
Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices
N Pant, W Lee, N Sanders, E Kioupakis
Applied Physics Letters 121 (3), 032105, 2022
2022
Electron-Phonon Scattering and Mobility in Atomically Thin AlN/GaN Superlattices from First Principles
N Pant, W Lee, N Sanders, E Kioupakis
Bulletin of the American Physical Society, 2022
2022
Experimental and theoretical study of hole scattering in RF sputtered p-type Cu2O thin films
J Jo, Z Deng, N Sanders, E Kioupakis, RL Peterson
Applied Physics Letters 120 (11), 112105, 2022
2022
Computational discovery of extreme-gap semiconductors
S Chae, N Sanders, K Mengle, J Heron, E Kioupakis
Bulletin of the American Physical Society, 2022
2022
Computational discovery of ultra-wide-band-gap semiconductors
E Kioupakis, S Chae, K Mengle, K Bushick, N Sanders, N Pant, S Dagli, ...
APS March Meeting Abstracts 2021, J56. 001, 2021
2021
Dependence of 2D nitride electronic and optical properties on heterostructure stacking orientation
N Sanders, E Kioupakis
Bulletin of the American Physical Society 65, 2020
2020
Deep ultraviolet luminescence and charge-transfer excitons in atomically thin GaN quantum wells
W Lee, D Bayerl, N Sanders, Z Deng, E Kioupakis
Bulletin of the American Physical Society 65, 2020
2020
Effect of stacking orientation on the electronic and optical properties of 2D nitride heterostructures
N Sanders, E Kioupakis
APS March Meeting Abstracts 2019, B15. 013, 2019
2019
Band structure and optical properties of boron arsenide (BAs): effects of quasiparticle corrections, spin-orbit coupling, and phonon-assisted optical transitions
K Bushick, K Mengle, N Sanders, E Kioupakis
APS March Meeting Abstracts 2019, L22. 006, 2019
2019
Electronic and optical properties of two-dimensional III-nitrides from first principles
N Sanders, D Bayerl, G Shi, K Mengle, E Kioupakis
APS March Meeting Abstracts 2018, F37. 013, 2018
2018
Electronic and optical properties of two-dimensional GaN from first-principles calculations
N Sanders, D Bayerl, G Shi, E Kioupakis
APS March Meeting Abstracts 2017, P23. 005, 2017
2017
Structural and electronic properties of amorphous ternary and quaternary oxide semiconductors
KN Sanders, R Khanal, JE Medvedeva
APS March Meeting Abstracts 2016, G1. 029, 2016
2016
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Articles 1–20