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Hossein Aghababa
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Year
Bidirectional teleportation of a two-qubit state by using eight-qubit entangled state as a quantum channel
MS Sadeghi Zadeh, M Houshmand, H Aghababa
International Journal of Theoretical Physics 56 (7), 2101-2112, 2017
492017
Quantum division circuit based on restoring division algorithm
A Khosropour, H Aghababa, B Forouzandeh
2011 Eighth International Conference on Information Technology: New …, 2011
392011
Significant performance improvement of a terahertz photoconductive antenna using a hybrid structure
M Bashirpour, S Ghorbani, M Kolahdouz, M Neshat, M Masnadi-Shirazi, ...
RSC advances 7 (83), 53010-53017, 2017
292017
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems
H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh
IEICE Electronics Express 9 (10), 881-887, 2012
232012
Bidirectional quantum teleportation of a class of n-qubit states by using (2n+ 2)-qubit entangled states as quantum channel
MSS Zadeh, M Houshmand, H Aghababa
International Journal of Theoretical Physics 57 (1), 175-183, 2018
192018
Probability calculation of read failures in nano-scaled SRAM cells under process variations
H Aghababa, B Ebrahimi, A Afzali-Kusha, M Pedram
Microelectronics Reliability 52 (11), 2805-2811, 2012
172012
Bidirectional quantum teleportation of an arbitrary number of qubits over noisy channel
MS Sadeghi-Zadeh, M Houshmand, H Aghababa, MH Kochakzadeh, ...
Quantum Information Processing 18 (11), 1-19, 2019
162019
4 bit comparator design based on reversible logic gates
S Abbasalizadeh, B Forouzandeh, H Aghababa
Lecture Notes on Information Theory 1 (3), 2013
122013
Time-domain analysis of carbon nanotubes
H Aghababa, N Masoumi
2008 12th IEEE Workshop on Signal Propagation on Interconnects, 1-4, 2008
122008
A novel leakage power reduction technique for nano-scaled CMOS digital integrated circuits
H Aghababa, M Kolahdouz
2016 26th International Workshop on Power and Timing Modeling, Optimization …, 2016
102016
Estimation of joint probability density function of delay and leakage power with variable skewness
M Ansari, M Imani, H Aghababa, B Forouzandeh
2013 International Conference on Electronics, Computer and Computation …, 2013
102013
Statistical estimation of leakage power dissipation in nano-scale complementary metal oxide semiconductor digital circuits using generalised extreme value distribution
H Aghababa, A Khosropour, A Afzali-Kusha, B Forouzandeh, M Pedram
IET circuits, devices & systems 6 (5), 273-278, 2012
102012
High-performance low-leakage regions of nano-scaled CMOS digital gates under variations of threshold voltage and mobility
H Aghababa, B Forouzandeh, A Afzali-Kusha
Journal of Zhejiang University SCIENCE C 13 (6), 460-471, 2012
102012
Simplified quantum-dot cellular automata implementation of counters
H Aghababa, MH Yazdinejad, A Afzali, B Forouzandeh
2008 7th International Caribbean Conference on Devices, Circuits and Systems …, 2008
82008
Statistical estimation of delay in nano-scale CMOS circuits using Burr Distribution
A Moshrefi, H Aghababa, O Shoaei
Microelectronics Journal 79, 30-37, 2018
72018
Systematic optimization of phosphorous diffusion for solar cell application
M Kermaniha, M Kolahdouz, N Manavizadeh, H Aghababa, M Elahi, ...
Journal of Materials Science: Materials in Electronics 27 (12), 13086-13092, 2016
72016
Multi-walled carbon nanotube impedance
I Madadi, H Aghababa, B Forouzandeh
2010 IEEE International Conference on Integrated Circuit Design and …, 2010
62010
Asymmetric bidirectional controlled quantum teleportation using eight qubit cluster state
P Kazemikhah, MB Tabalvandani, Y Mafi, H Aghababa
International Journal of Theoretical Physics 61 (2), 1-12, 2022
52022
Bidirectional quantum teleportation of an arbitrary number of qubits by using four qubit cluster state
P Kazemikhah, H Aghababa
International Journal of Theoretical Physics 60 (1), 378-386, 2021
52021
Selective boron diffusion without masking layer using boric acid for solar cell emitter formation
P Ebrahimi, M Kolahdouz, M Norouzi, H Aghababa, A Aletayeb, ...
Journal of Materials Science: Materials in Electronics 28 (15), 10794-10798, 2017
52017
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Articles 1–20