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Mario Alia
Mario Alia
MDM IMM CNR Agrate Brianza (MB) Italy
Verified email at mdm.imm.cnr.it - Homepage
Title
Cited by
Cited by
Year
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition
S Spiga, A Lamperti, C Wiemer, M Perego, E Cianci, G Tallarida, HL Lu, ...
Microelectronic Engineering 85 (12), 2414-2419, 2008
752008
Vibrational and electrical properties of hexagonal La2O3 films
I G. Scarel,a A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L ...
APPLIED PHYSICS LETTERS 91 (102901), 2007
742007
Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition
HL Lu, G Scarel, M Alia, M Fanciulli, SJ Ding, DW Zhang
Applied Physics Letters 92 (22), 2008
732008
Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films
S Vangelista, E Cinquanta, C Martella, M Alia, M Longo, A Lamperti, ...
Nanotechnology 27 (17), 175703, 2016
722016
New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices
N Huby, G Tallarida, M Kutrzeba, S Ferrari, E Guziewicz, M Godlewski
Microelectronic Engineering 85 (12), 2442-2444, 2008
582008
Engineering the growth of MoS2 via atomic layer deposition of molybdenum oxide film precursor
C Martella, P Melloni, E Cinquanta, E Cianci, M Alia, M Longo, A Lamperti, ...
Adv. Electron. Mater 2 (10), 1600330, 2016
482016
Thermodynamic stability of high phosphorus concentration in silicon nanostructures
M Perego, G Seguini, E Arduca, J Frascaroli, D De Salvador, ...
Nanoscale 7 (34), 14469-14475, 2015
392015
Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)
A Lamperti, S Spiga, HL Lu, C Wiemer, M Perego, E Cianci, M Alia, ...
Microelectronic Engineering 85 (12), 2425-2429, 2008
322008
Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon
E Longo, M Belli, M Alia, M Rimoldi, R Cecchini, M Longo, C Wiemer, ...
Advanced Functional Materials 32 (4), 2109361, 2022
292022
Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition
P Tummala, A Lamperti, M Alia, E Kozma, LG Nobili, A Molle
Materials 13 (12), 2786, 2020
292020
Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching
C. Canevali, M. Alia, M. Fanciulli, M. Longo, R. Ruffo, C. Mari
Surface & Coatings Technology 280, 37–42, 2015
262015
Microwave irradiation effects on random telegraph signal in a MOSFET
E Prati, M Fanciulli, A Calderoni, G Ferrari, M Sampietro
Physics Letters A 370 (5-6), 491-493, 2007
262007
Spin‐Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance
E Longo, L Locatelli, M Belli, M Alia, A Kumar, M Longo, M Fanciulli, ...
Advanced Materials Interfaces 8 (23), 2101244, 2021
162021
Large Area Growth of Silver and Gold Telluride Ultrathin Films via Chemical Vapor Tellurization
S Ghomi, A Lamperti, M Alia, CS Casari, C Grazianetti, A Molle, C Martella
Inorganics 12 (1), 33, 2024
12024
The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction
S Vangelista, E Cinquanta, C Martella, M Longo, A Lamperti, R Mantovan, ...
2015
Influence of the thin film precursor on the structural order of MoS2 deposited by chemical vapor transport
C Martella, M Alia, E Cianci, E Cinquanta, A Lamperti, M Longo, ...
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