| Linking electronic transport through a spin crossover thin film to the molecular spin state using x-ray absorption spectroscopy operando techniques F Schleicher, M Studniarek, KS Kumar, E Urbain, K Katcko, J Chen, ... ACS applied materials & interfaces 10 (37), 31580-31585, 2018 | 32 | 2018 |
| Spin-driven electrical power generation at room temperature K Katcko, E Urbain, B Taudul, F Schleicher, J Arabski, E Beaurepaire, ... Communications Physics 2 (1), 116, 2019 | 26 | 2019 |
| High-endurance ferroelectric (La, Y) and (La, Gd) Co-doped hafnium zirconate grown by atomic layer deposition MI Popovici, AM Walke, J Bizindavyi, J Meersschaut, K Banerjee, ... ACS Applied Electronic Materials 4 (4), 1823-1831, 2022 | 19 | 2022 |
| Encoding information on the excited state of a molecular spin chain K Katcko, E Urbain, F Ngassam, L Kandpal, B Chowrira, F Schleicher, ... Advanced Functional Materials 31 (15), 2009467, 2021 | 13 | 2021 |
| Consolidated picture of tunnelling spintronics across oxygen vacancy states in MgO F Schleicher, B Taudul, U Halisdemir, K Katcko, E Monteblanco, D Lacour, ... Journal of Physics D: Applied Physics 52 (30), 305302, 2019 | 13 | 2019 |
| Capacitive memory window with non-destructive read in ferroelectric capacitors S Mukherjee, J Bizindavyi, S Clima, MI Popovici, X Piao, K Katcko, ... IEEE Electron Device Letters, 2023 | 7 | 2023 |
| Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory S Ramesh, SV Palayam, A Ajaykumar, K Opsomer, J Bastos, ... 2021 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2021 | 7 | 2021 |
| Engineering strain and texture in ferroelectric scandium-doped aluminium nitride SRC McMitchell, AM Walke, K Banerjee, S Mertens, X Piao, M Mao, ... ACS Applied Electronic Materials 5 (2), 858-864, 2023 | 6 | 2023 |
| First demonstration of ruthenium and molybdenum word lines integrated into 40nm pitch 3D-NAND memory devices A Ajaykumar, L Breuil, K Katcko, F Schleicher, F Sebaai, Y Oniki, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 4 | 2021 |
| Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering Z Chen, N Ronchi, A Walke, K Banerjee, MI Popovici, K Katcko, ... 2023 IEEE International Memory Workshop (IMW), 1-4, 2023 | 2 | 2023 |
| At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells S Rachidi, A Arreghini, D Verreck, GL Donadio, K Banerjee, K Katcko, ... 2022 IEEE International Memory Workshop (IMW), 1-4, 2022 | 2 | 2022 |
| Probing inorganic and organic paths through spin-driven transport K Katcko Université de Strasbourg, 2019 | | 2019 |
| Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains K Katcko, E Urbain, L Kandpal, B Chowrira, F Schleicher, U Halisdemir, ... arXiv preprint arXiv:1910.10578, 2019 | | 2019 |
| Hole transport across MgO-based magnetic tunnel junctions with high resistance-area product due to oxygen vacancies F Schleicher, B Taudul, U Halisdemir, K Katcko, E Monteblanco, D Lacour, ... arXiv preprint arXiv:1711.05643, 2017 | | 2017 |
| Spintronics across molecular spin chains using solvent-free nanojunction processing K Katcko, E Urbain, L Kandpal, B Chowrira, U Halisdemir, ... | | |
Martin BowenSenior Researcher, Institut de Physique et Chimie des Materiaux de Strasbourg, CNRS / U. of Strasbourg, FranceVerified email at unistra.fr
