| Localized states in advanced dielectrics from the vantage of spin-and symmetry-polarized tunnelling across MgO F Schleicher, U Halisdemir, D Lacour, M Gallart, S Boukari, G Schmerber, ... Nature communications 5, 4547, 2014 | 59 | 2014 |
| Extreme Wafer Thinning and nano-TSV processing for 3D Heterogeneous Integration A Jourdain, F Schleicher, J De Vos, M Stucchi, E Chery, A Miller, G Beyer, ... 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 42-48, 2020 | 43 | 2020 |
| 28nm pitch single exposure patterning readiness by metal oxide resist on 0.33 NA EUV lithography D De Simone, L Kljucar, P Das, R Blanc, C Beral, J Severi, ... Extreme Ultraviolet (EUV) Lithography XII 11609, 43-53, 2021 | 32 | 2021 |
| Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling A Gupta, OV Pedreira, G Arutchelvan, H Zahedmanesh, K Devriendt, ... IEEE Transactions on Electron Devices 67 (12), 5349-5354, 2020 | 32 | 2020 |
| Linking electronic transport through a spin crossover thin film to the molecular spin state using X-ray absorption spectroscopy operando techniques F Schleicher, M Studniarek, KS Kumar, E Urbain, K Katcko, J Chen, ... ACS applied materials & interfaces 10 (37), 31580-31585, 2018 | 32 | 2018 |
| Control of defect-mediated tunneling barrier heights in ultrathin MgO films DJ Kim, WS Choi, F Schleicher, RH Shin, S Boukari, V Davesne, C Kieber, ... Applied Physics Letters 97 (26), 2010 | 29 | 2010 |
| Disentangling magnetic hardening and molecular spin chain contributions to exchange bias in ferromagnet/molecule bilayers S Boukari, H Jabbar, F Schleicher, M Gruber, G Avedissian, J Arabski, ... Nano letters 18 (8), 4659-4663, 2018 | 27 | 2018 |
| Spin-driven electrical power generation at room temperature K Katcko, E Urbain, B Taudul, F Schleicher, J Arabski, E Beaurepaire, ... Communications Physics 2 (1), 1-8, 2019 | 26 | 2019 |
| Probing a Device's Active Atoms M Studniarek, U Halisdemir, F Schleicher, B Taudul, E Urbain, S Boukari, ... Advanced Materials 29 (19), 1606578, 2017 | 25 | 2017 |
| Modulating the ferromagnet/molecule spin hybridization using an artificial magnetoelectric M Studniarek, S Cherifi‐Hertel, E Urbain, U Halisdemir, R Arras, B Taudul, ... Advanced Functional Materials 27 (27), 1700259, 2017 | 24 | 2017 |
| Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding With sub-300 nm Alignment Precision A Marinins, S Hänsch, H Sar, F Chancerel, N Golshani, HL Wang, ... IEEE Journal of Selected Topics in Quantum Electronics 29 (3: Photon. Elec …, 2022 | 19 | 2022 |
| Tunneling Spintronics across MgO Driven by Double Oxygen Vacancies B Taudul, EN Monteblanco, U Halisdemir, D Lacour, F Schleicher, ... Advanced Electronic Materials 3 (7), 1600390, 2017 | 19 | 2017 |
| Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster A Veloso, A Jourdain, G Hiblot, F Schleicher, K D’have, F Sebaai, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 17 | 2021 |
| Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node A Gupta, H Mertens, Z Tao, S Demuynck, J Bömmels, G Arutchelvan, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 16 | 2020 |
| Encoding information on the excited state of a molecular spin chain K Katcko, E Urbain, F Ngassam, L Kandpal, B Chowrira, F Schleicher, ... Advanced Functional Materials, 2009467, 2021 | 13 | 2021 |
| Consolidated picture of tunnelling spintronics across oxygen vacancy states in MgO F Schleicher, B Taudul, U Halisdemir, K Katcko, E Monteblanco, D Lacour, ... Journal of Physics D: Applied Physics 52 (30), 305302, 2019 | 13 | 2019 |
| Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails A Veloso, A Jourdain, D Radisic, R Chen, G Arutchelvan, B O’Sullivan, ... IEEE Transactions on Electron Devices, 2022 | 12 | 2022 |
| Towards high NA patterning readiness: materials, processes and etch transfer investigation for P24 Line Space NA Thiam, JG Santaclara, JH Franke, F Schleicher, R Blanc, A Moussa, ... International Conference on Extreme Ultraviolet Lithography 2021 11854, 118540A, 2021 | 12 | 2021 |
| Design and Optimization of SRAM Macro and Logic Using Backside Interconnects at 2nm node R Chen, G Sisto, A Jourdain, G Hiblot, M Stucchi, N Kakarla, B Chehab, ... 2021 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2021 | 11 | 2021 |
| Buried power rail scaling and metal assessment for the 3 nm node and beyond A Gupta, OV Pedreira, Z Tao, H Mertens, D Radisic, N Jourdan, ... 2020 IEEE International Electron Devices Meeting (IEDM), 20.3. 1-20.3. 4, 2020 | 11 | 2020 |
Martin BowenSenior Researcher, Institut de Physique et Chimie des Materiaux de Strasbourg, CNRS / U. of Strasbourg, FranceVerified email at unistra.fr
