| Growth of highly strain-relaxed Ge1− xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method S Takeuchi, Y Shimura, O Nakatsuka, S Zaima, M Ogawa, A Sakai Applied physics letters 92 (23), 2008 | 157 | 2008 |
| Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ... Microelectronic Engineering 88 (4), 342-346, 2011 | 156 | 2011 |
| High quality Ge virtual substrates on Si wafers with standard STI patterning R Loo, G Wang, L Souriau, JC Lin, S Takeuchi, G Brammertz, M Caymax Journal of The Electrochemical Society 157 (1), H13, 2009 | 121 | 2009 |
| Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates O Nakatsuka, N Tsutsui, Y Shimura, S Takeuchi, A Sakai, S Zaima Japanese Journal of Applied Physics 49 (4S), 04DA10, 2010 | 112 | 2010 |
| Growth and structure evaluation of strain-relaxed Ge1− xSnx buffer layers grown on various types of substrates S Takeuchi, A Sakai, K Yamamoto, O Nakatsuka, M Ogawa, S Zaima Semiconductor science and technology 22 (1), S231, 2006 | 96 | 2006 |
| Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials S Yamasaka, Y Nakamura, T Ueda, S Takeuchi, A Sakai Scientific reports 5 (1), 14490, 2015 | 78 | 2015 |
| Tensile strained Ge layers on strain-relaxed Ge1− xSnx/virtual Ge substrates S Takeuchi, A Sakai, O Nakatsuka, M Ogawa, S Zaima Thin Solid Films 517 (1), 159-162, 2008 | 64 | 2008 |
| Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials S Yamasaka, K Watanabe, S Sakane, S Takeuchi, A Sakai, K Sawano, ... Scientific Reports 6, 22838, 2016 | 59 | 2016 |
| Growth of Ge1− xSnx heteroepitaxial layers with very high Sn contents on InP (001) substrates M Nakamura, Y Shimura, S Takeuchi, O Nakatsuka, S Zaima Thin Solid Films 520 (8), 3201-3205, 2012 | 47 | 2012 |
| Ge1− xSnx stressors for strained-Ge CMOS S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... Solid-State Electronics 60 (1), 53-57, 2011 | 46 | 2011 |
| Formation of Ni (Ge1− xSnx) layers with solid-phase reaction in Ni/Ge1− xSnx/Ge systems T Nishimura, O Nakatsuka, Y Shimura, S Takeuchi, B Vincent, ... Solid-State Electronics 60 (1), 46-52, 2011 | 42 | 2011 |
| Molecular beam deposition of Al2O3 on p-Ge (001)/Ge0. 95Sn0. 05 heterostructure and impact of a Ge-cap interfacial layer C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ... Applied Physics Letters 98 (19), 2011 | 40 | 2011 |
| Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions B Vincent, R Loo, W Vandervorst, J Delmotte, B Douhard, VK Valev, ... Solid-State Electronics 60 (1), 116-121, 2011 | 37 | 2011 |
| Si/SiGe Resonant Interband Tunneling Diodes Incorporating -Doping Layers Grown by Chemical Vapor Deposition SY Park, R Anisha, PR Berger, R Loo, ND Nguyen, S Takeuchi, ... IEEE electron device letters 30 (11), 1173-1175, 2009 | 35 | 2009 |
| Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches G Wang, R Loo, S Takeuchi, L Souriau, JC Lin, A Moussa, H Bender, ... Thin Solid Films 518 (9), 2538-2541, 2010 | 34 | 2010 |
| Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition S Takeuchi, ND Nguyen, FE Leys, R Loo, T Conard, W Vandervorst, ... ECS Transactions 16 (10), 495, 2008 | 31 | 2008 |
| In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge (001) substrates Y Shimura, S Takeuchi, O Nakatsuka, B Vincent, F Gencarelli, T Clarysse, ... Thin Solid Films 520 (8), 3206-3210, 2012 | 27 | 2012 |
| Control of interfacial properties of Al2O3/Ge gate stack structure using radical nitridation technique K Kato, S Kyogoku, M Sakashita, W Takeuchi, H Kondo, S Takeuchi, ... Japanese journal of applied physics 50 (10S), 10PE02, 2011 | 24 | 2011 |
| Growth and characterization of heteroepitaxial layers of GeSiSn ternary alloy T Yamaha, O Nakatsuka, S Takeuchi, W Takeuchi, N Taoka, K Araki, ... ECS Transactions 50 (9), 907, 2013 | 23 | 2013 |
| Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers Y Moriyama, K Ikeda, S Takeuchi, Y Kamimuta, Y Nakamura, K Izunome, ... Applied Physics Express 7 (8), 086501, 2014 | 21 | 2014 |
Yosuke Shimura静岡大学Verified email at shizuoka.ac.jp
