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Ernest Wu
Ernest Wu
IBM Co.
Verified email at us.ibm.com
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Cited by
Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
5692019
Reliability wearout mechanisms in advanced CMOS technologies
AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ...
John Wiley & Sons, 2009
2672009
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability
EY Wu, J Suné
Microelectronics reliability 45 (12), 1809-1834, 2005
1862005
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques
EY Wu, RP Vollertsen
IEEE Transactions on Electron Devices 49 (12), 2131-2140, 2002
1632002
Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides
E Wu, J Sune, W Lai, E Nowak, J McKenna, A Vayshenker, D Harmon
Solid-State Electronics 46 (11), 1787-1798, 2002
1602002
Ultra-thin oxide reliability for ULSI applications
EY Wu, JH Stathis, LK Han
Semiconductor Science and Technology 15 (5), 425, 2000
1502000
IEEE Trans. Magn.
EY Wu, JV Peske, DC Palmer
IEEE Trans. Magn 30 (6), 4254-4256, 1994
1481994
Experimental evidence of T/sub BD/power-law for voltage dependence of oxide breakdown in ultrathin gate oxides
EY Wu, A Vayshenker, E Nowak, J Sune, RP Vollertsen, W Lai, D Harmon
IEEE Transactions on Electron Devices 49 (12), 2244-2253, 2002
1312002
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
1282011
Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides
EY Wu, J Aitken, E Nowak, A Vayshenker, P Varekamp, G Hueckel, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
1262000
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 2016
1182016
Challenges for accurate reliability projections in the ultra-thin oxide regime
EY Wu, WW Abadeer, LK Han, SH Lo, GR Hueckel
1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999
1151999
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics
EY Wu, EJ Nowak, A Vayshenker, WL Lai, DL Harmon
IBM Journal of Research and Development 46 (2.3), 287-298, 2002
1122002
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress …
EY Wu, J Suñé, W Lai
IEEE Transactions on Electron Devices 49 (12), 2141-2150, 2002
1082002
Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure
E Wu, E Nowak, J Aitken, W Abadeer, LK Han, S Lo
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
1011998
Gate oxide breakdown under current limited constant voltage stress
BP Linder, JH Stathis, RA Wachnik, E Wu, SA Cohen, A Ray, ...
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000
892000
Hydrogen-Release Mechanisms in the Breakdown of Thin S i O 2 Films
J Suñé, EY Wu
Physical review letters 92 (8), 087601, 2004
842004
Statistics of successive breakdown events in gate oxides
J Sune, EY Wu
IEEE Electron Device Letters 24 (4), 272-274, 2003
772003
Weibull breakdown characteristics and oxide thickness uniformity
EY Wu, EJ Nowak, RP Vollertsen, LK Han
IEEE Transactions on Electron Devices 47 (12), 2301-2309, 2000
742000
Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
EY Wu, B Li, JH Stathis
Applied Physics Letters 103 (15), 2013
732013
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