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Shahriar Memaran
Shahriar Memaran
National High Magnetic Field Laboratory
Verified email at magnet.fsu.edu - Homepage
Title
Cited by
Cited by
Year
One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy
PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez
Nature 553, 63-67, 2018
3592018
Field-Effect Transistors Based on Few-Layered α-MoTe2
NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ...
ACS nano 8 (6), 5911-5920, 2014
3482014
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
NR Pradhan, D Rhodes, S Memaran, JM Poumirol, D Smirnov, ...
Scientific reports 5 (1), 1-8, 2015
1402015
Ambipolar molybdenum diselenide field-effect transistors: field-effect and hall mobilities
NR Pradhan, D Rhodes, Y Xin, S Memaran, L Bhaskaran, M Siddiq, S Hill, ...
ACS nano 8 (8), 7923-7929, 2014
1362014
Pronounced photovoltaic response from multilayered transition-metal dichalcogenides PN-junctions
S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, O Ogunsolu, ...
Nano letters 15 (11), 7532–7538, 2015
842015
Bilayer lateral heterostructures of transition-metal dichalcogenides and their optoelectronic response
PK Sahoo, S Memaran, FA Nugera, Y Xin, T Díaz Márquez, Z Lu, ...
ACS nano 13 (11), 12372-12384, 2019
662019
Phase modulators based on high mobility ambipolar ReSe2 field-effect transistors
NR Pradhan, C Garcia, B Isenberg, D Rhodes, S Feng, S Memaran, Y Xin, ...
Scientific reports 8 (1), 1-10, 2018
172018
Possible manifestations of the chiral anomaly and evidence for a magnetic field induced topological phase transition in the type-I Weyl semimetal TaAs
QR Zhang, B Zeng, YC Chiu, R Schönemann, S Memaran, W Zheng, ...
Physical Review B 100 (11), 115138, 2019
142019
Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P
KW Chen, S Das, D Rhodes, S Memaran, T Besara, T Siegrist, ...
Journal of Physics: Condensed Matter 28 (14), 14LT01, 2016
132016
ACS Nano 8, 5911 (2014)
NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ...
12
Layer-and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor
D Shcherbakov, P Stepanov, S Memaran, Y Wang, Y Xin, J Yang, K Wei, ...
Science Advances 7 (5), eabe2892, 2021
92021
Sequential Edge-Epitaxy in 2D Lateral Heterostructures
PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez
arXiv preprint arXiv:1706.07014, 2017
32017
Pronounced photovoltaic response from PN-junctions of multi-layered MoSe_2 on h-BN
S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, P Ajayan, ...
arXiv preprint arXiv:1411.2086, 2014
22014
Lateral PN Junctions Based on 2-D Materials
S Memaran
12018
Quantum Hall effect in a two-dimensional semiconductor with large spin-orbit coupling
D Shcherbakov, J Yang, S Memaran, K Watanabe, T Taniguchi, ...
Physical Review B 106 (4), 045307, 2022
2022
Light sources with bias tunable spectrum based on van der Waals interface transistors
H Henck, D Mauro, D Domaretskiy, M Philippi, S Memaran, W Zheng, Z Lu, ...
Nature communications 13 (1), 1-8, 2022
2022
Emergence of second electronic subband in ultrathin InSe.
D Shcherbakov, G Voigt, S Memaran, K Watanabe, T Taniguchi, L Balicas, ...
Bulletin of the American Physical Society, 2022
2022
Thickness and twist angle tunable moiré excitons in InSe/GaSe heterostructures
W Zheng, L Xiang, FA Quesada, M Augustin, Z Lu, A Sood, F Wu, ...
Bulletin of the American Physical Society, 2022
2022
Van der Waals Interface Transistors as Light Sources with Bias Tunable Spectrum
H Henck, D Mauro, D Domaretskiy, M Philippi, S Memaran, W Zheng, Z Lu, ...
arXiv preprint arXiv:2201.01264, 2022
2022
Emission from localized states in few-layer InSe: Experiment
Z Lu, KW Song, D Shcherbakov, Y Jiang, S Memaran, W Zheng, ...
APS March Meeting Abstracts 2021, Y53. 009, 2021
2021
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