| Electrical and optical characterization of surface passivation in GaAs nanowires CC Chang, CY Chi, M Yao, N Huang, CC Chen, J Theiss, AW Bushmaker, ... Nano letters 12 (9), 4484-4489, 2012 | 268 | 2012 |
| Observation of single event upsets in analog microcircuits R Koga, SD Pinkerton, SC Moss, DC Mayer, S LaLumondiere, SJ Hansel, ... IEEE transactions on nuclear science 40 (6), 1838-1844, 1993 | 148 | 1993 |
| Observation of single event upsets in analog microcircuits R Koga, SD Pinkerton, SC Moss, DC Mayer, S LaLumondiere, SJ Hansel, ... IEEE transactions on nuclear science 40 (6), 1838-1844, 1993 | 148 | 1993 |
| Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures SC Moss, SD LaLumondiere, JR Scarpulla, KP MacWilliams, WR Crain, ... IEEE Transactions on Nuclear Science 42 (6), 1948-1956, 1995 | 124 | 1995 |
| Optical communications downlink from a 1.5 U CubeSat: OCSD program TS Rose, DW Rowen, S LaLumondiere, NI Werner, R Linares, A Faler, ... International Conference on Space Optics—ICSO 2018 11180, 201-212, 2019 | 96 | 2019 |
| Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions R Koga, SH Penzin, KB Crawford, WR Crain, SC Moss, SD Pinkerton, ... IEEE Transactions on Nuclear Science 44 (6), 2325-2332, 1997 | 85 | 1997 |
| Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation RL Pease, AL Sternberg, Y Boulghassoul, LW Massengill, S Buchner, ... IEEE Transactions on Nuclear Science 49 (6), 3163-3170, 2002 | 81 | 2002 |
| SEU-hardened storage cell validation using a pulsed laser R Velazco, T Calin, M Nicolaidis, SC Moss, SD LaLumondiere, VT Tran, ... IEEE Transactions on Nuclear Science 43 (6), 2843-2848, 1996 | 69 | 1996 |
| Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators SD LaLumondiere, R Koga, P Yu, MC Maher, SC Moss IEEE Transactions on Nuclear Science 49 (6), 3121-3128, 2002 | 44 | 2002 |
| Catastrophic latchup in CMOS analog-to-digital converters TF Miyahira, AH Johnston, HN Becker, SD LaLumondiere, SC Moss IEEE Transactions on Nuclear Science 48 (6), 1833-1840, 2001 | 43 | 2001 |
| Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy TW Kim, TJ Garrod, K Kim, JJ Lee, SD LaLumondiere, Y Sin, WT Lotshaw, ... Applied Physics Letters 100 (12), 2012 | 41 | 2012 |
| Single event transient (SET) sensitivity of radiation hardened and COTS voltage comparators R Koga, SH Crain, KB Crawford, SC Moss, SD LaLumondiere, ... 2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in …, 2000 | 40 | 2000 |
| LEO to ground optical communications from a small satellite platform TS Rose, SW Janson, S LaLumondiere, N Werner, DH Hinkley, ... Free-Space Laser Communication and Atmospheric Propagation XXVII 9354, 139-147, 2015 | 35 | 2015 |
| A TID and SEE radiation-hardened, wideband, low-noise amplifier B Mossawir, IR Linscott, US Inan, JL Roeder, JV Osborn, SC Witczak, ... IEEE Transactions on Nuclear Science 53 (6), 3439-3448, 2006 | 35 | 2006 |
| Optical communications downlink from a low-earth orbiting 1.5 U CubeSat TS Rose, DW Rowen, SD LaLumondiere, NI Werner, R Linares, AC Faler, ... Optics express 27 (17), 24382-24392, 2019 | 30 | 2019 |
| Properties of ‘bulk’GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration TW Kim, K Forghani, LJ Mawst, TF Kuech, SD LaLumondiere, Y Sin, ... Journal of crystal growth 393, 70-74, 2014 | 30 | 2014 |
| Topology-related upset mechanisms in design hardened storage cells T Calin, R Velazco, M Nicolaidis, S Moss, SD LaLumondiere, VT Tran, ... RADECS 97. Fourth European Conference on Radiation and its Effects on …, 1997 | 29 | 1997 |
| New approach for pulsed-laser testing that mimics heavy-ion charge deposition profiles JM Hales, A Khachatrian, S Buchner, J Warner, A Ildefonso, ... IEEE Transactions on Nuclear Science 67 (1), 81-90, 2019 | 26 | 2019 |
| Single event transients induced by picosecond pulsed X-ray absorption in III–V heterojunction transistors DM Cardoza, SD LaLumondiere, MA Tockstein, SC Witczak, Y Sin, ... IEEE Transactions on Nuclear Science 59 (6), 2729-2738, 2012 | 26 | 2012 |
| Physics of failure investigation in high-power broad-area InGaAs-AlGaAs strained quantum well lasers Y Sin, SD LaLumondiere, N Presser, BJ Foran, NA Ives, WT Lotshaw, ... High-Power Diode Laser Technology and Applications X 8241, 324-335, 2012 | 24 | 2012 |
