M. Hong

Citace

	Všechny	Od 2019
Citace	19825	2835
h-index	71	24
i10-index	299	69

920

460

230

690

19861987198819891990199119921993199419951996199719981999200020012002200320042005200620072008200920102011201220132014201520162017201820192020202120222023202462 165 491 582 521 503 389 398 334 274 315 315 257 351 329 306 403 403 441 441 568 701 855 856 845 841 722 903 733 727 542 709 508 568 532 479 489 446 321

Veřejný přístup

Zobrazit všechny

3 články

1 článek

dostupné

nedostupné

Vychází ze zplnomocnění pro financování

Spoluautoři

J. KwoNational Tsing Hua University, Department of physics; Bell Labs, Stanford UniversityE-mailová adresa ověřena na: phys.nthu.edu.tw
Mao-Lin HuangTaiwan Semiconductor Manufacturing CompanyE-mailová adresa ověřena na: oz.nthu.edu.tw
T. D. LinNational Tsing Hua UniversityE-mailová adresa ověřena na: mx.nthu.edu.tw
Fan RenUniversity of Florida, Bell Lab, AT&TE-mailová adresa ověřena na: che.ufl.edu
Yen-Hsun (Glen) LinDepartment of Physics, National Tsing Hua University (NTHU)E-mailová adresa ověřena na: phys.nthu.edu.tw
Chao-Kai ChengNational Taiwan UniversityE-mailová adresa ověřena na: ntu.edu.tw
Hsien-Wen WanPhD student, National Taiwan UniversityE-mailová adresa ověřena na: ntu.edu.tw
Young-Kai ChenII-VI Inc., Cornell University/Princeton UniversityE-mailová adresa ověřena na: cornell.edu
R OpilaUniversity of DelawareE-mailová adresa ověřena na: udel.edu
Yi-Ting Cheng國立台灣大學E-mailová adresa ověřena na: ntu.edu.tw
Chi-Nan Wu 巫啓男Max Planck Institute for Chemical Physics of SolidsE-mailová adresa ověřena na: phys.nthu.edu.tw
Adrian TungAnalog Engineer at IntelE-mailová adresa ověřena na: cornell.edu
Yu-Ting FanchiangNational Taiwan UniversityE-mailová adresa ověřena na: ntu.edu.tw
E. Fred Schubert, Future Chips Conste...Rensselaer Polytechnic InstituteE-mailová adresa ověřena na: rpi.edu
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityE-mailová adresa ověřena na: purdue.edu
Lawrence Boyu YoungNational Taiwan UniversityE-mailová adresa ověřena na: ntu.edu.tw
Yu-Hwa LoUCSDE-mailová adresa ověřena na: ucsd.edu
ChoquetteUniversity of IllinoisE-mailová adresa ověřena na: illinois.edu
Leonard FeldmanProfessor of Physics and Materials ScienceE-mailová adresa ověřena na: rutgers.edu
Ko-Hsuan Mandy ChenNational Tsing Hua University, Department of physicsE-mailová adresa ověřena na: m105.nthu.edu.tw

Sledovat

M. Hong

Natl Taiwan Univ. Bell Laboratories

E-mailová adresa ověřena na: phys.ntu.edu.tw

Hetero-interfaces – science and technology molecular beam epitaxy atomic layer deposition nano-electronics spintronics


Název Seřadit podle citací Seřadit podle roku Seřadit podle názvu	Citace Citace	Rok
Ga₂O₃ films for electronic and optoelectronic applications M Passlack, EF Schubert, WS Hobson, M Hong, N Moriya, SNG Chu, ... Journal of applied physics 77 (2), 686-693, 1995	524	1995
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation M Hong, J Kwo, AR Kortan, JP Mannaerts, AM Sergent Science 283 (5409), 1897-1900, 1999	517	1999
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ... Applied Physics Letters 87 (25), 2005	484	2005
Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice CF Majkrzak, JW Cable, J Kwo, M Hong, DB McWhan, Y Yafet, ... Physical review letters 56 (25), 2700, 1986	459	1986
Cubic HfO {sub 2} doped with Y {sub 2} O {sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant ZK Yang, WC Lee, YJ Lee, P Chang, ML Huang, M Hong, CH Hsu, J Kwo Applied Physics Letters 90 (15), 2007	433	2007
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003	411	2003
Crystal structure of the 80 K superconductor YBa₂Cu₄O₈ P Marsh, RM Fleming, ML Mandich, AM DeSantolo, J Kwo, M Hong, ... Nature 334 (6178), 141-143, 1988	403	1988
Properties of high κ gate dielectrics and for Si J Kwo, M Hong, AR Kortan, KL Queeney, YJ Chabal, RL Opila Jr, ... Journal of Applied Physics 89 (7), 3920-3927, 2001	401	2001
High ε gate dielectrics and for silicon J Kwo, M Hong, AR Kortan, KT Queeney, YJ Chabal, JP Mannaerts, ... Applied Physics Letters 77 (1), 130-132, 2000	396	2000
Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y₁Ba₂Cu₃O_x JW Ekin, AI Braginski, AJ Panson, MA Janocko, DW Capone, NJ Zaluzec, ... Journal of applied physics 62 (12), 4821-4828, 1987	373	1987
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition PD Ye, GD Wilk, J Kwo, B Yang, HJL Gossmann, M Frei, SNG Chu, ... IEEE Electron Device Letters 24 (4), 209-211, 2003	339	2003
Optical properties of gallium oxide thin films M Rebien, W Henrion, M Hong, JP Mannaerts, M Fleischer Applied physics letters 81 (2), 250-252, 2002	297	2002
Quasistatic and high frequency capacitance–voltage characterization of Ga₂O₃–GaAs structures fabricated by in situ molecular beam epitaxy M Passlack, M Hong, JP Mannaerts Applied physics letters 68 (8), 1099-1101, 1996	296	1996
Effect of temperature on metal–oxide–semiconductor field-effect transistors F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ... Applied Physics Letters 73 (26), 3893-3895, 1998	284	1998
Structural and superconducting properties of orientation-ordered Y 1 Ba 2 Cu 3 O 7− x films prepared by molecular-beam epitaxy J Kwo, TC Hsieh, RM Fleming, M Hong, SH Liou, BA Davidson, ... Physical Review B 36 (7), 4039, 1987	282	1987
III–V compound semiconductor transistors—from planar to nanowire structures H Riel, LE Wernersson, M Hong, JA Del Alamo Mrs Bulletin 39 (8), 668-677, 2014	267	2014
Magnetic and structural properties of single-crystal rare-earth Gd-Y superlattices J Kwo, EM Gyorgy, DB McWhan, M Hong, FJ DiSalvo, C Vettier, JE Bower Physical review letters 55 (13), 1402, 1985	244	1985
Energy-band parameters of atomic-layer-deposition Al2O3∕ InGaAs heterostructure ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong Applied physics letters 89 (1), 2006	242	2006
Magnetic rare earth superlattices CF Majkrzak, J Kwo, M Hong, Y Yafet, D Gibbs, CL Chien, J Bohr Advances in Physics 40 (2), 99-189, 1991	236	1991
Dielectric properties of electron‐beam deposited Ga₂O₃ films M Passlack, NEJ Hunt, EF Schubert, GJ Zydzik, M Hong, JP Mannaerts, ... Applied physics letters 64 (20), 2715-2717, 1994	231	1994

Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.

Články 1–20

Citace za rok

Duplicitní citace

Sloučené citace

Přidat spoluautorySpoluautoři

Sledovat

Citace

Spoluautoři