| Voltage-induced ferromagnetic resonance in magnetic tunnel junctions J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ... Physical review letters 108 (19), 197203, 2012 | 336 | 2012 |
| Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ... Journal of Applied Physics 109 (7), 2011 | 245 | 2011 |
| Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ... Applied Physics Letters 98 (11), 2011 | 231 | 2011 |
| Nanosecond-timescale low energy switching of in-plane magnetic tunnel junctions through dynamic Oersted-field-assisted spin Hall effect SV Aradhya, GE Rowlands, J Oh, DC Ralph, RA Buhrman Nano letters 16 (10), 5987-5992, 2016 | 168 | 2016 |
| Quantum reservoir computing with a single nonlinear oscillator LCG Govia, GJ Ribeill, GE Rowlands, HK Krovi, TA Ohki Physical Review Research 3 (1), 013077, 2021 | 116 | 2021 |
| Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ... Applied Physics Letters 98 (10), 2011 | 114 | 2011 |
| Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ... Journal of Physics D: Applied Physics 45 (2), 025001, 2011 | 95 | 2011 |
| Compact model for spin–orbit magnetic tunnel junctions M Kazemi, GE Rowlands, E Ipek, RA Buhrman, EG Friedman IEEE Transactions on Electron Devices 63 (2), 848-855, 2016 | 88 | 2016 |
| Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ... Applied Physics Letters 98 (7), 2011 | 80 | 2011 |
| Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications J Park, GE Rowlands, OJ Lee, DC Ralph, RA Buhrman Applied Physics Letters 105 (10), 2014 | 70 | 2014 |
| Strategies and tolerances of spin transfer torque switching DE Nikonov, GI Bourianoff, G Rowlands, IN Krivorotov Journal of Applied Physics 107 (11), 2010 | 68 | 2010 |
| Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ... IEEE Electron Device Letters 32 (1), 57-59, 2010 | 66 | 2010 |
| Nonlinear ferromagnetic resonance induced by spin torque in nanoscale magnetic tunnel junctions X Cheng, JA Katine, GE Rowlands, IN Krivorotov Applied Physics Letters 103 (8), 2013 | 65 | 2013 |
| Magnetization dynamics in a dual free-layer spin-torque nano-oscillator GE Rowlands, IN Krivorotov Physical Review B—Condensed Matter and Materials Physics 86 (9), 094425, 2012 | 64 | 2012 |
| SuperMind: a survey of the potential of superconducting electronics for neuromorphic computing M Schneider, E Toomey, G Rowlands, J Shainline, P Tschirhart, K Segall Superconductor Science and Technology 35 (5), 053001, 2022 | 56 | 2022 |
| Cryogenic memory architecture integrating spin Hall effect based magnetic memory and superconductive cryotron devices MH Nguyen, GJ Ribeill, MV Gustafsson, S Shi, SV Aradhya, AP Wagner, ... Scientific reports 10 (1), 248, 2020 | 50 | 2020 |
| Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect SV Aradhya, RA Buhrman, DC Ralph, GE Rowlands US Patent 10,333,058, 2019 | 44 | 2019 |
| A cryogenic spin-torque memory element with precessional magnetization dynamics GE Rowlands, CA Ryan, L Ye, L Rehm, D Pinna, AD Kent, TA Ohki Scientific reports 9 (1), 803, 2019 | 39 | 2019 |
| Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions GE Rowlands, SV Aradhya, S Shi, EH Yandel, J Oh, DC Ralph, ... Applied Physics Letters 110 (12), 2017 | 39 | 2017 |
| Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer MT Rahman, A Lyle, P Khalili Amiri, J Harms, B Glass, H Zhao, ... Journal of Applied Physics 111 (7), 2012 | 39 | 2012 |
Ilya KrivorotovProfessor, University of California at IrvineE-mailová adresa ověřena na: uci.edu
