| Atomic‐scale formation of ultrasmooth surfaces on sapphire substrates for high‐quality thin‐film fabrication M Yoshimoto, T Maeda, T Ohnishi, H Koinuma, O Ishiyama, M Shinohara, ... Applied Physics Letters 67 (18), 2615-2617, 1995 | 472 | 1995 |
| Defects and transport in complex oxide thin films T Ohnishi, K Shibuya, T Yamamoto, M Lippmaa Journal of Applied Physics 103 (10), 103703, 2008 | 378 | 2008 |
| Improved stoichiometry and misfit control in perovskite thin film formation at a critical fluence by pulsed laser deposition T Ohnishi, M Lippmaa, T Yamamoto, S Meguro, H Koinuma Applied Physics Letters 87 (24), 241919, 2005 | 295 | 2005 |
| Interfacial phenomena in solid-state lithium battery with sulfide solid electrolyte K Takada, N Ohta, L Zhang, X Xu, BT Hang, T Ohnishi, M Osada, T Sasaki Solid State Ionics 225, 594-597, 2012 | 200 | 2012 |
| Transparent cubic garnet-type solid electrolyte of Al2O3-doped Li7La3Zr2O12 Y Suzuki, K Kami, K Watanabe, A Watanabe, N Saito, T Ohnishi, ... Solid State Ionics 278, 172-176, 2015 | 193 | 2015 |
| Preparation of thermally stable -terminated substrate surfaces T Ohnishi, K Shibuya, M Lippmaa, D Kobayashi, H Kumigashira, ... Applied physics letters 85 (2), 272-274, 2004 | 189 | 2004 |
| Determination of surface polarity of -axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy T Ohnishi, A Ohtomo, M Kawasaki, K Takahashi, M Yoshimoto, ... Applied physics letters 72 (7), 824-826, 1998 | 174 | 1998 |
| Thickness-dependent electronic structure of ultrathin films studied by in situ photoemission spectroscopy D Toyota, I Ohkubo, H Kumigashira, M Oshima, T Ohnishi, M Lippmaa, ... Applied Physics Letters 87 (16), 162508, 2005 | 160 | 2005 |
| A-site layer terminated perovskite substrate: T Ohnishi, K Takahashi, M Nakamura, M Kawasaki, M Yoshimoto, ... Applied physics letters 74 (17), 2531-2533, 1999 | 157 | 1999 |
| Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy M Sumiya, M Tanaka, K Ohtsuka, S Fuke, T Ohnishi, I Ohkubo, ... Applied physics letters 75 (5), 674-676, 1999 | 136 | 1999 |
| Room-temperature epitaxial growth of CeO2 thin films on Si (111) substrates for fabrication of sharp oxide/silicon interface M Yoshimoto, K Shimozono, T Maeda, T Ohnishi, M Kumagai, T Chikyow, ... Japanese journal of applied physics 34 (6A), L688, 1995 | 136 | 1995 |
| In situ growth of superconducting thin films with preferential orientation by molecular-beam epitaxy W Jo, JU Huh, T Ohnishi, AF Marshall, MR Beasley, RH Hammond Applied physics letters 80 (19), 3563-3565, 2002 | 135 | 2002 |
| In-situ growth of superconducting MgB2 thin films by molecular beam epitaxy W Jo, JU Huh, T Ohnishi, AF Marshall, MR Beasley, RH Hammond APS, U14. 006, 2002 | 135* | 2002 |
| Local switching of two-dimensional superconductivity using the ferroelectric field effect KS Takahashi, M Gabay, D Jaccard, K Shibuya, T Ohnishi, M Lippmaa, ... Nature 441 (7090), 195-198, 2006 | 134 | 2006 |
| Photoemission from Buried Interfaces in Superlattices M Takizawa, H Wadati, K Tanaka, M Hashimoto, T Yoshida, A Fujimori, ... Physical review letters 97 (5), 057601, 2006 | 133 | 2006 |
| Trap-controlled space-charge-limited current mechanism in resistance switching at interface T Harada, I Ohkubo, K Tsubouchi, H Kumigashira, T Ohnishi, M Lippmaa, ... Applied Physics Letters 92 (22), 222113, 2008 | 129 | 2008 |
| In-plane and polar orientations of ZnO thin films grown on atomically flat sapphire I Ohkubo, A Ohtomo, T Ohnishi, Y Mastumoto, H Koinuma, M Kawasaki Surface science 443 (1-2), L1043-L1048, 1999 | 126 | 1999 |
| Porous amorphous silicon film anodes for high-capacity and stable all-solid-state lithium batteries J Sakabe, N Ohta, T Ohnishi, K Mitsuishi, K Takada Communications Chemistry 1 (1), 1-9, 2018 | 123 | 2018 |
| Positive and negative aspects of interfaces in solid-state batteries K Takada, T Ohno, N Ohta, T Ohnishi, Y Tanaka ACS Energy Letters 3 (1), 98-103, 2017 | 109 | 2017 |
| High‐Throughput Characterization of Metal Electrode Performance for Electric‐Field‐Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures K Tsubouchi, I Ohkubo, H Kumigashira, M Oshima, Y Matsumoto, K Itaka, ... Advanced materials 19 (13), 1711-1713, 2007 | 108 | 2007 |
Kazunori TakadaNational Institute for Materials ScienceVerified email at nims.go.jp
