Inanc Meric
Inanc Meric
E-mailová adresa ověřena na:
Boron nitride substrates for high-quality graphene electronics
CR Dean, AF Young, I Meric, C Lee, L Wang, S Sorgenfrei, K Watanabe, ...
Nature nanotechnology 5 (10), 722-726, 2010
One-dimensional electrical contact to a two-dimensional material
L Wang, I Meric, PY Huang, Q Gao, Y Gao, H Tran, T Taniguchi, ...
Science 342 (6158), 614-617, 2013
Current saturation in zero-bandgap, top-gated graphene field-effect transistors
I Meric, MY Han, AF Young, B Ozyilmaz, P Kim, KL Shepard
Nature nanotechnology 3 (11), 654-659, 2008
Chip-integrated ultrafast graphene photodetector with high responsivity
X Gan, RJ Shiue, Y Gao, I Meric, TF Heinz, K Shepard, J Hone, S Assefa, ...
Nature photonics 7 (11), 883-887, 2013
Wafer-scale graphene integrated circuit
YM Lin, A Valdes-Garcia, SJ Han, DB Farmer, I Meric, Y Sun, Y Wu, ...
Science 332 (6035), 1294-1297, 2011
Chemical vapor deposition-derived graphene with electrical performance of exfoliated graphene
N Petrone, CR Dean, I Meric, AM Van Der Zande, PY Huang, L Wang, ...
Nano letters 12 (6), 2751-2756, 2012
Graphene field-effect transistors based on boron–nitride dielectrics
I Meric, CR Dean, N Petrone, L Wang, J Hone, P Kim, KL Shepard
Proceedings of the IEEE 101 (7), 1609-1619, 2013
Graphene based heterostructures
C Dean, AF Young, L Wang, I Meric, GH Lee, K Watanabe, T Taniguchi, ...
Solid State Communications 152 (15), 1275-1282, 2012
Channel length scaling in graphene field-effect transistors studied with pulsed current− voltage measurements
I Meric, CR Dean, AF Young, N Baklitskaya, NJ Tremblay, C Nuckolls, ...
Nano letters 11 (3), 1093-1097, 2011
RF performance of top-gated, zero-bandgap graphene field-effect transistors
I Meric, N Baklitskaya, P Kim, KL Shepard
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Electronic compressibility of layer-polarized bilayer graphene
AF Young, CR Dean, I Meric, S Sorgenfrei, H Ren, K Watanabe, ...
Physical Review B—Condensed Matter and Materials Physics 85 (23), 235458, 2012
High-speed electro-optic modulator integrated with graphene-boron nitride heterostructure and photonic crystal nanocavity
Y Gao, RJ Shiue, X Gan, L Li, C Peng, I Meric, L Wang, A Szep, ...
Nano letters 15 (3), 2001-2005, 2015
Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates
N Petrone, I Meric, J Hone, KL Shepard
Nano letters 13 (1), 121-125, 2013
Flexible graphene field-effect transistors encapsulated in hexagonal boron nitride
N Petrone, T Chari, I Meric, L Wang, KL Shepard, J Hone
ACS nano 9 (9), 8953-8959, 2015
Graphene field-effect transistors for radio-frequency flexible electronics
N Petrone, I Meric, T Chari, KL Shepard, J Hone
IEEE Journal of the Electron Devices Society 3 (1), 44-48, 2014
High-frequency performance of graphene field effect transistors with saturating IV-characteristics
I Meric, CR Dean, SJ Han, L Wang, KA Jenkins, J Hone, KL Shepard
2011 International Electron Devices Meeting, 2.1. 1-2.1. 4, 2011
High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes
I Meric, K Shepard, NJ Tremblay, P Kim, CP Nuckolls
US Patent 8,445,893, 2013
Controlled dielectrophoretic assembly of carbon nanotubes using real-time electrical detection
S Sorgenfrei, I Meric, S Banerjee, A Akey, S Rosenblatt, IP Herman, ...
Applied Physics Letters 94 (5), 2009
Advanced scaling of enhancement mode high-K gallium nitride-on-300mm-Si (111) transistor and 3D layer transfer GaN-silicon finfet CMOS integration
HW Then, M Radosavljevic, P Koirala, N Thomas, N Nair, I Ban, ...
2021 IEEE International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2021
Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms
C Prasad, KW Park, M Chahal, I Meric, SR Novak, S Ramey, P Bai, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 4B-5-1-4B-5-8, 2016
Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.
Články 1–20