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Hanbin Ying
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Operation of SiGe HBTs down to 70 mK
H Ying, BR Wier, J Dark, NE Lourenco, L Ge, AP Omprakash, M Mourigal, ...
IEEE Electron Device Letters 38 (1), 12-15, 2016
352016
Collector transport in SiGe HBTs operating at cryogenic temperatures
H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ...
IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018
242018
Tunneling, current gain, and transconductance in silicon-germanium heterojunction bipolar transistors operating at millikelvin temperatures
D Davidoviæ, H Ying, J Dark, BR Wier, L Ge, NE Lourenco, AP Omprakash, ...
Physical Review Applied 8 (2), 024015, 2017
232017
Cryogenic characterization of a ferroelectric field-effect-transistor
Z Wang, H Ying, W Chern, S Yu, M Mourigal, JD Cressler, AI Khan
Applied Physics Letters 116 (4), 2020
222020
Supercapacitor charge redistribution analysis for power management of wireless sensor networks
R Chai, H Ying, Y Zhang
IET Power Electronics 10 (2), 169-177, 2017
152017
Hot-carrier-damage-induced current gain enhancement (CGE) effects in SiGe HBTs
US Raghunathan, RP Martinez, BR Wier, AP Omprakash, H Ying, ...
IEEE Transactions on Electron Devices 65 (6), 2430-2438, 2018
132018
Single-event effects in high-frequency linear amplifiers: experiment and analysis
S Zeinolabedinzadeh, H Ying, ZE Fleetwood, NJH Roche, A Khachatrian, ...
IEEE transactions on Nuclear Science 64 (1), 125-132, 2016
122016
Physical differences in hot carrier degradation of oxide interfaces in complementary (np-n+ pnp) SiGe HBTs
US Raghunathan, H Ying, BR Wier, AP Omprakash, PS Chakraborty, ...
IEEE Transactions on Electron Devices 64 (1), 37-44, 2016
112016
Millimeter-wave SiGe radiometer front end with transformer-based Dicke switch and on-chip calibration noise source
M Frounchi, A Alizadeh, H Ying, CT Coen, AJ Gasiewski, JD Cressler
IEEE Journal of Solid-State Circuits 56 (5), 1464-1474, 2021
92021
An investigation of high-temperature (to 300° C) safe-operating-area in a high-voltage complementary SiGe on SOI technology
AP Omprakash, H Dao, US Raghunathan, H Ying, PS Chakraborty, ...
IEEE Transactions on Electron Devices 64 (9), 3748-3755, 2017
92017
Variability in total-ionizing-dose response of fourth-generation SiGe HBTs
JW Teng, A Ildefonso, GN Tzintzarov, H Ying, A Moradinia, PF Wang, X Li, ...
IEEE Transactions on Nuclear Science 68 (5), 949-957, 2021
82021
Revisiting safe operating area: SiGe HBT aging models for reliability-aware circuit design
BR Wier, RP Martinez, US Raghunathan, H Ying, S Zeinolabedinzadeh, ...
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018
82018
Variability of pn junctions and SiGe HBTs at cryogenic temperatures
H Ying, JW Teng, US Raghunathan, JP Moody, JD Cressler
IEEE Transactions on Electron Devices 68 (3), 987-993, 2021
72021
Compact modeling of SiGe HBTs for design of cryogenic control and readout circuits for quantum computing
H Ying, SG Rao, JW Teng, M Frounchi, M Müller, X Jin, M Schröter, ...
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2020
72020
Single-event effects in a millimeter-wave receiver front-end implemented in 90 nm, 300 GHz SiGe HBT technology
S Zeinolabedinzadeh, AC Ulusoy, F Inanlou, H Ying, Y Gong, ...
IEEE Transactions on Nuclear Science 64 (1), 536-543, 2016
72016
DC and RF variability of SiGe HBTs operating down to deep cryogenic temperatures
H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
62019
A broadband logarithmic power detector using 130 nm SiGe BiCMOS technology
Y Gong, S Lee, H Ying, AP Omprakash, E Gebara, H Gu, C Nicholls, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
62019
On the potential of using SiGe HBTs on SOI to support emerging applications up to 300° C
AP Omprakash, PS Chakraborty, H Ying, AS Cardoso, A Ildefonso, ...
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 27-30, 2015
62015
Operation of current mirrors in SiGe BiCMOS technology at cryogenic temperatures
H Ying, JW Teng, JD Cressler
IEEE Transactions on Electron Devices 68 (4), 1439-1445, 2021
52021
Cryogenic characterization of RF low-noise amplifiers utilizing inverse-mode SiGe HBTs for extreme environment applications
I Song, AS Cardoso, H Ying, MK Cho, JD Cressler
IEEE Transactions on Device and Materials Reliability 18 (4), 613-619, 2018
42018
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