Bernard GIL
Bernard GIL
CNRS university Montpellier
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Cited by
Cited by
Polarization effects in nitride semiconductors and device structures
H Morkoç, R Cingolani, B Gil
Material Research Innovations 3, 97-106, 1999
Hexagonal boron nitride is an indirect bandgap semiconductor
G Cassabois, P Valvin, B Gil
Nature photonics 10 (4), 262-266, 2016
Photonics with hexagonal boron nitride
JD Caldwell, I Aharonovich, G Cassabois, JH Edgar, B Gil, DN Basov
Nature Reviews Materials 4 (8), 552-567, 2019
Group III nitride semiconductor compounds: physics and applications
B Gil
(No Title), 1998
Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga) N/GaN quantum wells
M Leroux, N Grandjean, M Laügt, J Massies, B Gil, P Lefebvre, ...
Physical Review B 58 (20), R13371, 1998
ZnO as a material mostly adapted for the realization of room-temperature polariton lasers
M Zamfirescu, A Kavokin, B Gil, G Malpuech, M Kaliteevski
Physical Review B 65 (16), 161205, 2002
Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
B Gil, O Briot, RL Aulombard
Physical Review B 52 (24), R17028, 1995
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ...
Applied Physics Letters 78 (9), 1252-1254, 2001
Barrier-width dependence of group-III nitrides quantum-well transition energies
M Leroux, N Grandjean, J Massies, B Gil, P Lefebvre, P Bigenwald
Physical Review B 60 (3), 1496, 1999
Raman determination of phonon deformation potentials in α-GaN
F Demangeot, J Frandon, MA Renucci, O Briot, B Gil, RL Aulombard
Solid state communications 100 (4), 207-210, 1996
Internal electric field in wurtzite quantum wells
C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review B 72 (24), 241305, 2005
Direct band-gap crossover in epitaxial monolayer boron nitride
C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ...
Nature communications 10 (1), 2639, 2019
Efficient single photon emission from a high-purity hexagonal boron nitride crystal
LJ Martínez, T Pelini, V Waselowski, JR Maze, B Gil, G Cassabois, ...
Physical review B 94 (12), 121405, 2016
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl) N quantum wells
P Lefebvre, J Allègre, B Gil, H Mathieu, N Grandjean, M Leroux, J Massies, ...
Physical Review B 59 (23), 15363, 1999
Photon Bloch oscillations in porous silicon optical superlattices
V Agarwal, JA Del Río, G Malpuech, M Zamfirescu, A Kavokin, D Coquillat, ...
Physical review letters 92 (9), 097401, 2004
Optical properties of GaN epilayers on sapphire
M Tchounkeu, O Briot, B Gil, JP Alexis, RL Aulombard
Journal of applied physics 80 (9), 5352-5360, 1996
Polariton lasing in a hybrid bulk ZnO microcavity
T Guillet, M Mexis, J Levrat, G Rossbach, C Brimont, T Bretagnon, B Gil, ...
Applied Physics Letters 99 (16), 2011
Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
H Morkoç, R Cingolani, B Gil
Solid-State Electronics 43 (10), 1909-1927, 1999
Radiative lifetime of a single electron-hole pair in quantum dots
T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
III-Nitride Semiconductors and their Modern Devices
B Gil
OUP Oxford, 2013
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