| Influence of fin-like configuration parameters on the linearity of AlGaN/GaN HEMTs P Wang, X Ma, M Mi, M Zhang, J Zhu, Y Zhou, S Wu, J Liu, L Yang, B Hou, ... IEEE Transactions on Electron Devices 68 (4), 1563-1569, 2021 | 28 | 2021 |
| Analysis of low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs for terminal applications Y Zhou, J Zhu, M Mi, M Zhang, P Wang, Y Han, S Wu, J Liu, Q Zhu, ... IEEE Journal of the Electron Devices Society 9, 756-762, 2021 | 20 | 2021 |
| High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure Y Zhou, M Mi, M Yang, Y Han, P Wang, Y Chen, J Liu, C Gong, Y Lu, ... Applied Physics Letters 120 (6), 2022 | 18 | 2022 |
| Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors J Zhu, Y Zhang, MJ Uren, S Liu, P Wang, M Mi, B Hou, L Yang, M Kuball, ... Applied Physics Letters 116 (22), 2020 | 16 | 2020 |
| Improvement of electron transport property and on-resistance in normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMTs using post-etch surface treatment J Zhu, S Jing, X Ma, S Liu, P Wang, Y Zhang, Q Zhu, M Mi, B Hou, L Yang, ... IEEE Transactions on Electron Devices 67 (9), 3541-3547, 2020 | 15 | 2020 |
| 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer JL Liu, JJ Zhu, MH Mi, Q Zhu, SY Liu, PF Wang, YW Zhou, ZY Zhao, ... Applied Physics Letters 120 (5), 2022 | 10 | 2022 |
| Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation J Liu, M Mi, J Zhu, S Liu, P Wang, Y Zhou, Q Zhu, M Wu, H Lu, B Hou, ... IEEE Transactions on Electron Devices 69 (2), 631-636, 2021 | 10 | 2021 |
| Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax· VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates PF Wang, MH Mi, M Zhang, Q Zhu, JJ Zhu, YW Zhou, JW Chen, YL Chen, ... Applied Physics Letters 120 (10), 2022 | 8 | 2022 |
| High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications J Liu, M Mi, J Zhu, P Wang, Y Zhou, S Liu, Q Zhu, M Zhang, B Hou, ... IEEE Transactions on Electron Devices 69 (8), 4188-4193, 2022 | 7 | 2022 |
| High-efficiency millimeter-wave enhancement-mode ultrathin-barrier AlGaN/GaN Fin-HEMT for low-voltage terminal applications Y Zhou, M Mi, C Gong, P Wang, X Wen, Y Chen, J Liu, M Yang, M Zhang, ... IEEE Transactions on Electron Devices, 2023 | 4 | 2023 |
| High efficiency over 70% at 3.6-GHz InAlN/GaN HEMT fabricated by gate recess and oxidation process for low-voltage RF applications Y Zhou, M Mi, Y Han, P Wang, Y Chen, J Liu, C Gong, M Yang, M Zhang, ... IEEE Transactions on Electron Devices 70 (1), 43-47, 2022 | 4 | 2022 |
| Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications PF Wang, MH Mi, X Du, YW Zhou, JL Liu, ZH Chen, SR An, YL Chen, ... Applied Physics Letters 121 (7), 2022 | 4 | 2022 |
| Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd = 12 V J Guo, J Zhu, S Liu, K Cheng, Q Zhu, P Wang, K Liu, Z Zhao, L Qin, ... IEEE Electron Device Letters 44 (4), 590-593, 2023 | 3 | 2023 |
| A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications Z Chen, M Mi, J Liu, P Wang, Y Zhou, M Zhang, X Ma, Y Hao Chinese Physics B 31 (11), 117105, 2022 | 3 | 2022 |
| High linearity AlGaN/GaN HEMT with double-V th coupling for millimeter-wave applications P Wang, M Mi, M Zhang, J Zhu, Y Zhou, J Liu, S Liu, L Yang, B Hou, X Ma, ... Chinese Physics B 31 (2), 027103, 2022 | 3 | 2022 |
| InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications C Gong, M Mi, Y Zhou, P Wang, Y Chen, J Liu, Y Han, S An, S Guo, ... IEEE Journal of the Electron Devices Society 11, 72-77, 2023 | 2 | 2023 |
| Influence of Fin-Like Configuration on Small-Signal Performance of AlGaN/GaN HEMTs ZY Zhao, YL Chen, Y Lu, HS Zhang, CP Yi, YC Wang, JD Zhou, WL Liu, ... IEEE Transactions on Electron Devices 69 (12), 6624-6632, 2022 | 2 | 2022 |
| Investigation of InAlN/GaN Double Channel HEMTs for Improved Linearity S An, M Mi, P Wang, X Ma, Y Hao 2022 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2022 | 1 | 2022 |
| Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications Y Zhou, M Mi, P Wang, C Gong, Y Chen, Z Chen, J Liu, M Yang, M Zhang, ... Chinese Physics B 32 (12), 127102, 2023 | | 2023 |
| Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN high electron mobility transistors for optimizing linearity at high electrical fields in … P Wang, M Mi, Y Chen, Y Zhou, J Zhou, Z Zhao, Q Zhu, X Du, C Gong, ... Semiconductor Science and Technology 38 (9), 094001, 2023 | | 2023 |
Minhan MiXidian University在 xidian.edu.cn 的电子邮件经过验证
