| Trench-gated MOSFET with bidirectional voltage clamping RK Williams, W Grabowski, M Darwish, J Korec US Patent 6,049,108, 2000 | 333 | 2000 |
| The Trench Power MOSFET: Part I—History, Technology, and Prospects RK Williams, MN Darwish, RA Blanchard, R Siemieniec, P Rutter, ... IEEE Transactions on Electron Devices 64 (3), 674-691, 2017 | 241 | 2017 |
| An improved electron and hole mobility model for general purpose device simulation MN Darwish, JL Lentz, MR Pinto, PM Zeitzoff, TJ Krutsick, HH Vuong IEEE Transactions on Electron Devices 44 (9), 1529-1538, 1997 | 226 | 1997 |
| Low resistance power MOSFET or other device containing silicon-germanium layer RK Williams, M Darwish, W Grabowski, ME Cornell US Patent 6,239,463, 2001 | 217 | 2001 |
| High density trenched DMOS transistor FI Hshieh, MF Chang, KI Chen, RK Williams, M Darwish US Patent 5,689,128, 1997 | 185 | 1997 |
| Trench MOSFET having improved breakdown and on-resistance characteristics MN Darwish US Patent 6,084,264, 2000 | 168 | 2000 |
| A new 800 V lateral MOSFET with dual conduction paths DR Disney, AK Paul, M Darwish, R Basecki, V Rumennik Power Semiconductor Devices and ICs, 2001. ISPSD'01. Proceedings of the 13th …, 2001 | 164 | 2001 |
| Semiconductor device structures and related processes J Zeng, MN Darwish US Patent 8,659,076, 2014 | 155 | 2014 |
| Semiconductor device structures and related processes J Zeng, MN Darwish US Patent 8,076,719, 2011 | 155 | 2011 |
| Study of the quasi-saturation effect in VDMOS transistors MN Darwish IEEE Transactions on Electron Devices 33 (11), 1710-1716, 1986 | 134 | 1986 |
| The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability RK Williams, MN Darwish, RA Blanchard, R Siemieniec, P Rutter, ... IEEE Transactions on Electron Devices 64 (3), 692-712, 2017 | 121 | 2017 |
| Power MOSFET with recessed field plate MN Darwish US Patent 7,843,004, 2010 | 114 | 2010 |
| Trench MOSFET with multi-resistivity drain to provide low on-resistance MN Darwish, RK Williams US Patent 5,895,952, 1999 | 112 | 1999 |
| Lateral resurfed COMFET M Darwish, K Board Electronics Letters 20 (12), 519-520, 1984 | 105 | 1984 |
| Termination for trench MIS device MN Darwish, KW Terrill, J Qi, Q Chen US Patent 7,795,675, 2010 | 104 | 2010 |
| A new power W-gated trench MOSFET (WMOSFET) with high switching performance M Darwish, C Yue, KH Lui, F Giles, B Chan, K Chen, D Pattanayak, ... Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD'03. 2003 IEEE …, 2003 | 100 | 2003 |
| Semiconductor device MN Darwish US Patent 8,659,074, 2014 | 88* | 2014 |
| High-voltage lateral transistor with a multi-layered extended drain structure DR Disney, M Darwish US Patent 6,555,873, 2003 | 81 | 2003 |
| Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer MN Darwish, RK Williams US Patent 5,674,766, 1997 | 64 | 1997 |
| Trench MIS device with thick oxide layer in bottom of gate contact trench MN Darwish US Patent 7,009,247, 2006 | 62 | 2006 |
