| Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN G Salviati, M Albrecht, C Zanotti‐Fregonara, N Armani, M Mayer, ... physica status solidi (a) 171 (1), 325-339, 1999 | 116 | 1999 |
| Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress M Pavesi, M Manfredi, G Salviati, N Armani, F Rossi, G Meneghesso, ... Applied physics letters 84 (17), 3403-3405, 2004 | 70 | 2004 |
| In‐plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors M Felici, A Polimeni, G Salviati, L Lazzarini, N Armani, F Masia, M Capizzi, ... Advanced Materials 18 (15), 1993-1997, 2006 | 62 | 2006 |
| Low-temperature germanium thin films on silicon V Sorianello, L Colace, N Armani, F Rossi, C Ferrari, L Lazzarini, ... Optical Materials Express 1 (5), 856-865, 2011 | 60 | 2011 |
| A study of the CdTe treatment with a Freon gas such as CHF2Cl S Mazzamuto, L Vaillant, A Bosio, N Romeo, N Armani, G Salviati Thin Solid Films 516 (20), 7079-7083, 2008 | 60 | 2008 |
| 15% efficient Cu (In, Ga) Se2 solar cells obtained by low-temperature pulsed electron deposition S Rampino, N Armani, F Bissoli, M Bronzoni, D Calestani, M Calicchio, ... Applied Physics Letters 101 (13), 2012 | 59 | 2012 |
| Influence of the fluorine doping on the optical properties of CdS thin films for photovoltaic applications A Podesta, N Armani, G Salviati, N Romeo, A Bosio, M Prato Thin Solid Films 511, 448-452, 2006 | 55 | 2006 |
| Optical and structural characterization of self-organized stacked GaN/AlN quantum dots G Salviati, F Rossi, N Armani, V Grillo, O Martinez, A Vinattieri, ... Journal of Physics: Condensed Matter 16 (2), S115, 2003 | 30 | 2003 |
| Role of thermal treatment on the luminescence properties of CdTe thin films for photovoltaic applications N Armani, G Salviati, L Nasi, A Bosio, S Mazzamuto, N Romeo Thin Solid Films 515 (15), 6184-6187, 2007 | 29 | 2007 |
| Interface properties of HCF2Cl annealed CdTe thin films for solar cells applications L Vaillant, N Armani, L Nasi, G Salviati, A Bosio, S Mazzamuto, N Romeo Thin Solid Films 516 (20), 7075-7078, 2008 | 27 | 2008 |
| Characterization of GaN-based metal–semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies N Armani, V Grillo, G Salviati, M Manfredi, M Pavesi, A Chini, ... Journal of applied physics 92 (5), 2401-2405, 2002 | 27 | 2002 |
| The role of Mg complexes in the degradation of InGaN-based LEDs F Rossi, N Armani, G Salviati, M Pavesi, G Meneghesso, S Levada, ... Superlattices and Microstructures 36 (4-6), 859-868, 2004 | 19 | 2004 |
| Deviation from Vegard law in lattice-matched InGaAs/InP epitaxial structures E Villaggi, C Bocchi, N Armani, G Carta, G Rossetto, C Ferrari Japanese journal of applied physics 41 (2S), 1000, 2002 | 18 | 2002 |
| Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire G Salviati, N Armani, C Zanotti-Fregonara, E Gombia, M Albrecht, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 2000 | 17 | 2000 |
| Growth and characterization of red-green-blue cathodoluminescent ceramic films D Gozzi, A Latini, G Salviati, N Armani Journal of applied physics 99 (12), 2006 | 16 | 2006 |
| Defect-induced luminescence in high-resistivity high-purity undoped CdTe crystals N Armani, C Ferrari, G Salviati, F Bissoli, M Zha, A Zappettini, L Zanotti Journal of Physics: Condensed Matter 14 (48), 13203, 2002 | 16 | 2002 |
| Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels G Meneghesso, S Levada, E Zanoni, G Salviati, N Armani, F Rossi, ... 2004 IEEE International Reliability Physics Symposium. Proceedings, 474-478, 2004 | 15 | 2004 |
| Hydride vapour phase epitaxy growth and characterisation of GaN layers R Fornari, M Bosi, N Armani, G Attolini, C Ferrari, C Pelosi, G Salviati Materials Science and Engineering: B 79 (2), 159-164, 2001 | 13 | 2001 |
| Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells N Armani, F Rossi, C Ferrari, L Lazzarini, A Vinattieri, M Colocci, A Reale, ... Superlattices and Microstructures 36 (4-6), 615-624, 2004 | 12 | 2004 |
| Optical and structural characterization of GaN/AlN quantum dots grown on Si (111) G Salviati, O Martinez, M Mazzoni, F Rossi, N Armani, P Gucciardi, ... Journal of Physics: Condensed Matter 14 (48), 13329, 2002 | 12 | 2002 |
