| Semiconductor Nanowire Light‐Emitting Diodes Grown on Metal: A Direction Toward Large‐Scale Fabrication of Nanowire Devices ATM Sarwar, SD Carnevale, F Yang, TF Kent, JJ Jamison, DW McComb, ... Small 11 (40), 5402-5408, 2015 | 117 | 2015 |
| Nanowire LEDs grown directly on flexible metal foil BJ May, ATMG Sarwar, RC Myers Applied Physics Letters 108 (14), 141103, 2016 | 113 | 2016 |
| Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes SD Carnevale, TF Kent, PJ Phillips, A Sarwar, C Selcu, RF Klie, RC Myers Nano letters 13 (7), 3029-3035, 2013 | 91 | 2013 |
| Tunnel junction enhanced nanowire ultraviolet light emitting diodes ATMG Sarwar, BJ May, JI Deitz, TJ Grassman, DW McComb, RC Myers Applied Physics Letters 107 (10), 101103, 2015 | 73 | 2015 |
| Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1− xN active regions TF Kent, SD Carnevale, ATM Sarwar, PJ Phillips, RF Klie, RC Myers Nanotechnology 25 (45), 455201, 2014 | 73 | 2014 |
| Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence ATMG Sarwar, BJ May, MF Chisholm, GJ Duscher, RC Myers Nanoscale 8 (15), 8024-8032, 2016 | 54 | 2016 |
| Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon SD Carnevale, C Marginean, PJ Phillips, TF Kent, A Sarwar, MJ Mills, ... Applied Physics Letters 100 (14), 142115, 2012 | 42 | 2012 |
| Exploiting piezoelectric charge for high performance graded InGaN nanowire solar cells ATMG Sarwar, RC Myers Applied Physics Letters 101 (14), 143905, 2012 | 40 | 2012 |
| Optical control of internal electric fields in band gap-graded InGaN nanowires N Erhard, ATMG Sarwar, F Yang, DW McComb, RC Myers, AW Holleitner Nano letters 15 (1), 332-338, 2014 | 27 | 2014 |
| Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN ATMG Sarwar, SD Carnevale, TF Kent, F Yang, DW McComb, RC Myers Applied Physics Letters 106 (3), 032102, 2015 | 26 | 2015 |
| On the enhancement of the drain current in indium-rich InGaAs surface-channel MOSFETs ATMG Sarwar, MR Siddiqui, MM Satter, A Haque IEEE Transactions on Electron Devices 59 (6), 1653-1660, 2012 | 24 | 2012 |
| Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency BJ May, MR Belz, A Ahamed, A Sarwar, CM Selcu, RC Myers ACS nano, 2018 | 22 | 2018 |
| Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes BJ May, CM Selcu, A Sarwar, RC Myers Applied Physics Letters 112 (9), 093107, 2018 | 22 | 2018 |
| Electronic Structure and Photocatalytic Water Oxidation Activity of RTiNO2 (R = Ce, Pr, and Nd) Perovskite Nitride Oxides PMW Spencer H. Porter, Zhenguo Huang, Shixue Dou, Samantha Brown-Xu, A.T.M ... Chemistry of Materials 27 (7), 2414-2420, 2015 | 22 | 2015 |
| Spin orbit torque (sot) memory devices and their methods of fabrication N Sato, A SMITH, T Gosavi, S Manipatruni, K Oguz, K O'Brien, T RAHMAN, ... US Patent App. 16/022,564, 2020 | 19 | 2020 |
| Single nanowire AlN/GaN double barrier resonant tunneling diodes with bipolar tunneling at room and cryogenic temperatures Y Shao, SD Carnevale, A Sarwar, RC Myers, W Lu Journal of Vacuum Science & Technology B 31 (6), 06FA03, 2013 | 12 | 2013 |
| Molecular beam epitaxy of graded-composition InGaN nanowires MR Laskar, SD Carnevale, ATMG Sarwar, PJ Phillips, MJ Mills, RC Myers Journal of electronic materials 42 (5), 863-867, 2013 | 12 | 2013 |
| A theoretical analysis of optimizing solar irradiance: Bangladesh perspective S Nahar, ATMG Sarwar, SA Chowdhury Developments in Renewable Energy Technology (ICDRET), 2009 1st International …, 2009 | 12 | 2009 |
| Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy ATMG Sarwar, F Yang, BD Esser, TF Kent, DW McComb, RC Myers Journal of Crystal Growth 443, 90-97, 2016 | 11 | 2016 |
| Molecular beam epitaxy of InN nanowires on Si ATMG Sarwar, SD Carnevale, TF Kent, MR Laskar, BJ May, RC Myers Journal of Crystal Growth 428, 59-70, 2015 | 10 | 2015 |
