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Anh Pham
Anh Pham
Deloitte
Verified email at deloitte.com
Title
Cited by
Cited by
Year
An ab initio study of transition metals doped with WSe2 for long-range room temperature ferromagnetism in two-dimensional transition metal dichalcogenide
CJ Gil, A Pham, A Yu, S Li
Journal of Physics: Condensed Matter 26 (30), 306004, 2014
592014
Electronic and magnetic properties of transition-metal-doped monolayer black phosphorus by defect engineering
Y Wang, A Pham, S Li, J Yi
The Journal of Physical Chemistry C 120 (18), 9773-9779, 2016
432016
Realizing gapped surface states in the magnetic topological insulator
W Ko, M Kolmer, J Yan, AD Pham, M Fu, F Lüpke, S Okamoto, Z Gai, ...
Physical Review B 102 (11), 115402, 2020
422020
Weak d magnetism in C and N doped ZnO
A Pham, MHN Assadi, YB Zhang, AB Yu, S Li
Journal of Applied Physics 110 (12), 2011
242011
Local manifestations of thickness-dependent topology and edge states in the topological magnet
F Lüpke, AD Pham, YF Zhao, LJ Zhou, W Lu, E Briggs, J Bernholc, ...
Physical Review B 105 (3), 035423, 2022
222022
Theoretical prediction of long-range ferromagnetism in transition-metal atom-doped d 0 dichalcogenide single layers SnS 2 and ZrS 2
L Ao, A Pham, HY Xiao, XT Zu, S Li
Physical Chemistry Chemical Physics 18 (36), 25151-25160, 2016
212016
Engineering the electronic and magnetic properties of d 0 2D dichalcogenide materials through vacancy doping and lattice strains
L Ao, A Pham, HY Xiao, XT Zu, S Li
Physical Chemistry Chemical Physics 18 (10), 7163-7168, 2016
182016
Orbital engineering of two-dimensional materials with hydrogenation: A realization of giant gap and strongly correlated topological insulators
A Pham, CJ Gil, SC Smith, S Li
Physical Review B 92 (3), 035427, 2015
172015
Subtle Interplay between Localized Magnetic Moments and Itinerant Electrons in LaAlO3/SrTiO3 Heterostructures
HL Hu, R Zeng, A Pham, TT Tan, Z Chen, C Kong, D Wang, S Li
ACS Applied Materials & Interfaces 8 (21), 13630-13636, 2016
152016
Oxygen Vacancy Dependence of Magnetic Behavior in the LaAlO3/SrTiO3 Heterostructures
HL Hu, L Ao, A Pham, D Wang, Y Wang, Z Chen, C Kong, TT Tan, X Zu, ...
Advanced Materials Interfaces 3 (20), 1600547, 2016
142016
Critical role of Fock exchange in characterizing dopant geometry and magnetic interaction in magnetic semiconductors
A Pham, MHN Assadi, AB Yu, S Li
Physical Review B 89 (15), 155110, 2014
142014
Superconductivity and structural instability in layered BiS 2-based LaO 1− x BiS 2
Y Chen, Y Cui, A Pham, Y Wang, MM Bhadbhade, R Wang, Y Su, H Hu, ...
Journal of Materials Chemistry C 7 (3), 586-591, 2019
122019
Unique topological surface states of full-Heusler topological crystalline insulators
A Pham, S Li
Physical Review B 95 (11), 115124, 2017
122017
Realization of exchange bias control with manipulation of interfacial frustration in magnetic complex oxide heterostructures
J Zhang, J Yang, GL Causer, J Shi, F Klose, JK Huang, A Tseng, D Wang, ...
Physical Review B 104 (17), 174444, 2021
112021
Max-cut clustering utilizing warm-start QAOA and IBM runtime
D Beaulieu, A Pham
arXiv preprint arXiv:2108.13464, 2021
92021
Tunable electronic and magnetic properties of arsenene nanoribbons
L Ao, A Pham, X Xiang, F Klose, S Li, X Zu
RSC advances 7 (82), 51935-51943, 2017
92017
Origins of possible synergistic effects in the interactions between metal atoms and MoS 2/graphene heterostructures for battery applications
J Fan, J Yang, A Pham, S Li
Physical Chemistry Chemical Physics 20 (27), 18671-18677, 2018
82018
Defect induced charge trapping in C-doped α-Al2O3
L Ao, A Pham, X Xiang, S Li, X Zu
Journal of Applied Physics 122 (2), 2017
82017
Engineering the strongly correlated properties of bulk Ruddlesden–Popper transition metal oxides via self-doping
A Pham, S Li
Physical Chemistry Chemical Physics 19 (18), 11373-11379, 2017
82017
Quantum Spin Hall Edge States and Interlayer Coupling in Twisted Bilayer WTe2
F Lüpke, D Waters, AD Pham, J Yan, DG Mandrus, P Ganesh, BM Hunt
Nano letters 22 (14), 5674-5680, 2022
72022
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