| Fundamentals of zinc oxide as a semiconductor A Janotti, CG Van de Walle Reports on progress in physics 72 (12), 126501, 2009 | 4138 | 2009 |
| Hydrogen as a cause of doping in zinc oxide CG Van de Walle Physical review letters 85 (5), 1012, 2000 | 3380 | 2000 |
| First-principles calculations for defects and impurities: Applications to III-nitrides CG Van de Walle, J Neugebauer Journal of applied physics 95 (8), 3851-3879, 2004 | 3202 | 2004 |
| Native point defects in ZnO A Janotti, CG Van de Walle Physical Review B 76 (16), 165202, 2007 | 3159 | 2007 |
| Band lineups and deformation potentials in the model-solid theory CG Van de Walle Physical review B 39 (3), 1871, 1989 | 2790 | 1989 |
| First-principles study of native point defects in ZnO AF Kohan, G Ceder, D Morgan, CG Van de Walle Physical Review B 61 (22), 15019, 2000 | 2170 | 2000 |
| First-principles calculations for point defects in solids C Freysoldt, B Grabowski, T Hickel, J Neugebauer, G Kresse, A Janotti, ... Reviews of modern physics 86 (1), 253, 2014 | 2085 | 2014 |
| Oxygen vacancies in ZnO A Janotti, CG Van de Walle Applied Physics Letters 87 (12), 122102, 2005 | 1850 | 2005 |
| Theoretical calculations of heterojunction discontinuities in the Si/Ge system CG Van de Walle, RM Martin Physical Review B 34 (8), 5621, 1986 | 1632 | 1986 |
| Gallium vacancies and the yellow luminescence in GaN J Neugebauer, CG Van de Walle Applied Physics Letters 69 (4), 503-505, 1996 | 1389 | 1996 |
| Universal alignment of hydrogen levels in semiconductors, insulators and solutions CG Van de Walle, J Neugebauer Nature 423 (6940), 626-628, 2003 | 1386 | 2003 |
| Fully ab initio finite-size corrections for charged-defect supercell calculations C Freysoldt, J Neugebauer, CG Van de Walle Physical review letters 102 (1), 016402, 2009 | 1249 | 2009 |
| Atomic geometry and electronic structure of native defects in GaN J Neugebauer, CG Van de Walle Physical Review B 50 (11), 8067, 1994 | 1033 | 1994 |
| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 910 | 2018 |
| Oxygen vacancies and donor impurities in JB Varley, JR Weber, A Janotti, CG Van de Walle Applied Physics Letters 97 (14), 142106, 2010 | 884 | 2010 |
| Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation C Stampfl, CG Van de Walle Physical Review B 59 (8), 5521, 1999 | 860 | 1999 |
| Hydrogen multicentre bonds A Janotti, CG Van de Walle Nature materials 6 (1), 44-47, 2007 | 832 | 2007 |
| Quantum computing with defects JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ... Proceedings of the National Academy of Sciences 107 (19), 8513-8518, 2010 | 776 | 2010 |
| Theoretical study of band offsets at semiconductor interfaces CG Van de Walle, RM Martin Physical Review B 35 (15), 8154, 1987 | 718 | 1987 |
| Carbon impurities and the yellow luminescence in GaN JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 97 (15), 152108, 2010 | 680 | 2010 |
