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phil mawby
phil mawby
professor of power electronics, School of Engineering, university of warwick, UK
Verified email at warwick.ac.uk
Title
Cited by
Cited by
Year
An industry-based survey of reliability in power electronic converters
S Yang, A Bryant, P Mawby, D Xiang, L Ran, P Tavner
IEEE transactions on Industry Applications 47 (3), 1441-1451, 2011
20922011
Condition monitoring for device reliability in power electronic converters: A review
S Yang, D Xiang, A Bryant, P Mawby, L Ran, P Tavner
IEEE transactions on power electronics 25 (11), 2734-2752, 2010
12762010
A lifetime estimation technique for voltage source inverters
H Huang, PA Mawby
IEEE Transactions on Power Electronics 28 (8), 4113-4119, 2012
4012012
Investigation into IGBT dV/dt during turn-off and its temperature dependence
A Bryant, S Yang, P Mawby, D Xiang, L Ran, P Tavner, PR Palmer
IEEE Transactions on Power Electronics 26 (10), 3019-3031, 2011
2412011
Monitoring solder fatigue in a power module using case-above-ambient temperature rise
D Xiang, L Ran, P Tavner, A Bryant, S Yang, P Mawby
IEEE Transactions on Industry Applications 47 (6), 2578-2591, 2011
2112011
Theory of a novel voltage-sustaining layer for power devices
XB Chen, PA Mawby, K Board, CAT Salama
Microelectronics journal 29 (12), 1005-1011, 1998
1961998
Exploration of power device reliability using compact device models and fast electrothermal simulation
AT Bryant, PA Mawby, PR Palmer, E Santi, JL Hudgins
IEEE transactions on industry applications 44 (3), 894-903, 2008
1822008
Condition monitoring power module solder fatigue using inverter harmonic identification
D Xiang, L Ran, P Tavner, S Yang, A Bryant, P Mawby
IEEE Transactions on Power Electronics 27 (1), 235-247, 2011
1722011
Failure and reliability analysis of a SiC power module based on stress comparison to a Si device
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai, B Gao, O Alatise, H Lu, ...
IEEE Transactions on device and materials reliability 17 (4), 727-737, 2017
1492017
Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules
S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015
1492015
Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ...
Journal of applied physics 100 (11), 2006
1442006
LowStress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling
W Lai, M Chen, L Ran, O Alatise, S Xu, P Mawby
IEEE Transactions on Power Electronics 31 (9), 6575-6585, 2015
1372015
An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs
JO Gonzalez, O Alatise, J Hu, L Ran, PA Mawby
IEEE Transactions on Power Electronics 32 (10), 7954-7966, 2016
1172016
An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation
S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ...
IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014
1082014
Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module
W Lai, M Chen, L Ran, S Xu, N Jiang, X Wang, O Alatise, P Mawby
IEEE Transactions on Power Electronics 32 (2), 1431-1441, 2016
1072016
A fast loss and temperature simulation method for power converters, part II: 3-D thermal model of power module
I Swan, A Bryant, PA Mawby, T Ueta, T Nishijima, K Hamada
IEEE Transactions on Power Electronics 27 (1), 258-268, 2011
962011
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 2013
922013
Capacitor selection for modular multilevel converter
Y Tang, L Ran, O Alatise, P Mawby
IEEE Transactions on Industry Applications 52 (4), 3279-3293, 2016
852016
Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (4), 2092-2102, 2015
852015
The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, PA Mawby
IEEE Transactions on Power Electronics 31 (6), 4526-4535, 2015
852015
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