Detlev Gruetzmacher
Detlev Gruetzmacher
Director at the Peter Grünberg Institute, Forschungszentrum Jülich
Verified email at - Homepage
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Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths, R Geiger, N von den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature photonics 9 (2), 88-92, 2015
Intersubband electroluminescence from silicon-based quantum cascade structures
G Dehlinger, L Diehl, U Gennser, H Sigg, J Faist, K Ensslin, ...
Science 290 (5500), 2277-2280, 2000
Three-dimensional Si/Ge quantum dot crystals
D Grützmacher, T Fromherz, C Dais, J Stangl, E Müller, Y Ekinci, ...
Nano letters 7 (10), 3150-3156, 2007
Anomalous coiling of sige/si and sige/si/cr helical nanobelts
L Zhang, E Ruh, D Grützmacher, L Dong, DJ Bell, BJ Nelson, ...
Nano letters 6 (7), 1311-1317, 2006
Interface and wetting layer effect on the catalyst‐free nucleation and growth of GaN nanowires
T Stoica, E Sutter, RJ Meijers, RK Debnath, R Calarco, H Lüth, ...
Small 4 (6), 751-754, 2008
Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors
S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ...
Applied physics letters 102 (19), 192103, 2013
A new technique for fabricating three-dimensional micro-and nanostructures of various shapes
VY Prinz, D Grützmacher, A Beyer, C David, B Ketterer, E Deckardt
Nanotechnology 12 (4), 399, 2001
Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings
DJ Bell, L Dong, BJ Nelson, M Golling, L Zhang, D Grützmacher
Nano Letters 6 (4), 725-729, 2006
Controllable fabrication of SiGe/Si and SiGe/Si/Cr helical nanobelts
L Zhang, E Deckhardt, A Weber, C Schönenberger, D Grützmacher
Nanotechnology 16 (6), 655, 2005
Electroluminescence from strain-compensated quantum-cascade structures based on a bound-to-continuum transition
L Diehl, S Menteºe, E Müller, D Grützmacher, H Sigg, U Gennser, ...
Applied physics letters 81 (25), 4700-4702, 2002
Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires
BE Maile, A Forchel, R Germann, D Grützmacher
Applied physics letters 54 (16), 1552-1554, 1989
Impact of nanometer-scale roughness on contact-angle hysteresis and globulin adsorption
B Müller, M Riedel, R Michel, SM De Paul, R Hofer, D Heger, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
Spin-orbit coupling and phase coherence in InAs nanowires
SE Hernández, M Akabori, K Sladek, C Volk, S Alagha, H Hardtdegen, ...
Physical Review B 82 (23), 235303, 2010
Extreme ultraviolet interference lithography at the Paul Scherrer Institut
V Auzelyte, C Dais, P Farquet, DA Gruetzmacher, LJ Heyderman, F Luo, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 8 (2), 021204, 2009
Interface-roughness-induced broadening of intersubband electroluminescence in -SiGe and -GaInAs∕AlInAs quantum-cascade structures
S Tsujino, A Borak, E Müller, M Scheinert, CV Falub, H Sigg, ...
Applied Physics Letters 86 (6), 062113, 2005
Hall effect measurements on InAs nanowires
C Blömers, T Grap, MI Lepsa, J Moers, S Trellenkamp, D Grützmacher, ...
Applied physics letters 101 (15), 152106, 2012
Freestanding SiGe/Si/Cr and microtubes
SV Golod, VY Prinz, P Wägli, L Zhang, O Kirfel, E Deckhardt, F Glaus, ...
Applied physics letters 84 (17), 3391-3393, 2004
Band-gap renormalization and band-filling effects in a homogeneous electron-hole plasma in As/InP single quantum wells
VD Kulakovskii, E Lach, A Forchel, D Grützmacher
Physical Review B 40 (11), 8087, 1989
Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown - and -Based Topological Insulators
P Olbrich, LE Golub, T Herrmann, SN Danilov, H Plank, VV Bel’kov, ...
Physical review letters 113 (9), 096601, 2014
Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires
K Jeganathan, RK Debnath, R Meijers, T Stoica, R Calarco, ...
Journal of applied physics 105 (12), 123707, 2009
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