| Improved inversion channel mobility in 4H-SiC MOSFETs on Si face utilizing phosphorus-doped gate oxide D Okamoto, H Yano, K Hirata, T Hatayama, T Fuyuki IEEE Electron Device Letters 31 (7), 710-712, 2010 | 346 | 2010 |
| Removal of near-interface traps at SiO 2/4H–SiC (0001) interfaces by phosphorus incorporation D Okamoto, H Yano, T Hatayama, T Fuyuki Applied Physics Letters 96 (20), 203508-203508-3, 2010 | 168 | 2010 |
| Improved channel mobility in 4H-SiC MOSFETs by boron passivation D Okamoto, M Sometani, S Harada, R Kosugi, Y Yonezawa, H Yano IEEE Electron Device Letters 35 (12), 1176-1178, 2014 | 116 | 2014 |
| Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements T Hatakeyama, Y Kiuchi, M Sometani, S Harada, D Okamoto, H Yano, ... Applied Physics Express 10 (4), 046601, 2017 | 113 | 2017 |
| Development of ultrahigh-voltage SiC devices K Fukuda, D Okamoto, M Okamoto, T Deguchi, T Mizushima, K Takenaka, ... IEEE Transactions on Electron Devices 62 (2), 396-404, 2014 | 96 | 2014 |
| Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC M Sometani, D Okamoto, S Harada, H Ishimori, S Takasu, T Hatakeyama, ... Journal of Applied Physics 117 (2), 024505, 2015 | 62 | 2015 |
| Low Vf and Highly Reliable 16 kV Ultrahigh Voltage SiC Flip-Type n-Channel Implantation and Epitaxial. IGBT Y Yonezawa, T Mizushima, K Takenaka, H Fujisawa, T Kato, S Harada, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 6.6. 1-6.6. 4, 2013 | 62 | 2013 |
| Analysis of anomalous charge-pumping characteristics on 4H-SiC MOSFETs D Okamoto, H Yano, T Hatayama, Y Uraoka, T Fuyuki IEEE Transactions on Electron Devices 55 (8), 2013-2020, 2008 | 36 | 2008 |
| Characterization of near-interface traps at 4H-SiC metal–oxide–semiconductor interfaces using modified distributed circuit model X Zhang, D Okamoto, T Hatakeyama, M Sometani, S Harada, R Kosugi, ... Applied Physics Express 10 (6), 064101, 2017 | 31 | 2017 |
| Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method M Sometani, D Okamoto, S Harada, H Ishimori, S Takasu, T Hatakeyama, ... Japanese Journal of Applied Physics 55 (4S), 04ER11, 2016 | 29 | 2016 |
| Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants H Yano, Y Oshiro, D Okamoto, T Hatayama, T Fuyuki Materials Science Forum 679, 603-606, 2011 | 27 | 2011 |
| Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities T Hatakeyama, T Masuda, M Sometani, S Harada, D Okamoto, H Yano, ... Applied Physics Express 12 (2), 021003, 2019 | 23 | 2019 |
| Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs Y Yonezawa, T Mizushima, K Takenaka, H Fujisawa, T Deguchi, T Kato, ... Materials Science Forum 821, 842-846, 2015 | 23 | 2015 |
| Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method X Zhang, T Matsumoto, U Sakurai, T Makino, M Ogura, S Yamasaki, ... Carbon 168, 659-664, 2020 | 22 | 2020 |
| Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal–Oxide–Semiconductor Structures D Okamoto, H Yano, Y Oshiro, T Hatayama, Y Uraoka, T Fuyuki Applied physics express 2 (2), 021201, 2009 | 22 | 2009 |
| Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT T Mizushima, K Takenaka, H Fujisawa, T Kato, S Harada, Y Tanaka, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 20 | 2014 |
| Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC R Morishita, H Yano, D Okamoto, T Hatayama, T Fuyuki Materials Science Forum 717, 739-742, 2012 | 19 | 2012 |
| SiC semiconductor element and manufacturing method for same H Yano, D Okamoto US Patent 8,546,815, 2013 | 16 | 2013 |
| Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions M Sometani, M Okamoto, T Hatakeyama, Y Iwahashi, M Hayashi, ... Japanese Journal of Applied Physics 57 (4S), 04FA07, 2018 | 15 | 2018 |
| Investigation of Maximum Junction Temperature for 4H‐SiC MOSFET During Unclamped Inductive Switching Test J An, M Namai, D Okamoto, H Yano, H Tadano, N Iwamuro Electronics and Communications in Japan 101 (1), 24-31, 2018 | 15 | 2018 |
