| Excitonic and Raman properties of ZnSe/Zn1−xCdxSe strained‐layer quantum wells HJ Lozykowski, VK Shastri Journal of applied physics 69 (5), 3235-3242, 1991 | 254 | 1991 |
| Visible cathodoluminescence of GaN doped with Dy, Er, and Tm HJ Lozykowski, WM Jadwisienczak, I Brown Applied physics letters 74 (8), 1129-1131, 1999 | 235 | 1999 |
| Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductors HJ Lozykowski Physical Review B 48 (24), 17758, 1993 | 142 | 1993 |
| Visible cathodoluminescence of Er-doped amorphous AlN thin films K Gurumurugan, H Chen, GR Harp, WM Jadwisienczak, HJ Lozykowski Applied physics letters 74 (20), 3008-3010, 1999 | 139 | 1999 |
| Photoluminescence and cathodoluminescence of GaN doped with Pr HJ Lozykowski, WM Jadwisienczak, I Brown Journal of Applied Physics 88 (1), 210-222, 2000 | 133 | 2000 |
| Visible emission from ZnO doped with rare-earth ions WM Jadwisienczak, HJ Lozykowski, A Xu, B Patel Journal of electronic materials 31, 776-784, 2002 | 119 | 2002 |
| Visible emission from AlN doped with Eu and Tb ions WM Jadwisienczak, HJ Lozykowski, I Berishev, A Bensaoula, IG Brown Journal of Applied Physics 89 (8), 4384-4390, 2001 | 113 | 2001 |
| Luminescence properties of GaN and superlattice doped with europium HJ Lozykowski, WM Jadwisienczak, J Han, IG Brown Applied Physics Letters 77 (6), 767-769, 2000 | 107 | 2000 |
| Photoluminescence and cathodoluminescence of GaN doped with Tb HJ Lozykowski, WM Jadwisienczak, I Brown Applied Physics Letters 76 (7), 861-863, 2000 | 90 | 2000 |
| Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN HJ Lozykowski, WM Jadwisienczak physica status solidi (b) 244 (6), 2109-2126, 2007 | 73 | 2007 |
| Spectroscopic properties of Sm3+ (4f 5) in GaN JB Gruber, B Zandi, HJ Lozykowski, WM Jadwisienczak Journal of applied physics 91 (5), 2929-2935, 2002 | 72 | 2002 |
| Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering WM Jadwisienczak, HJ Lozykowski, F Perjeru, H Chen, M Kordesch, ... Applied Physics Letters 76 (23), 3376-3378, 2000 | 70 | 2000 |
| Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN HJ Lozykowski, WM Jadwisienczak, A Bensaoula, O Monteiro Microelectronics journal 36 (3-6), 453-455, 2005 | 63 | 2005 |
| Optical properties of CdTe/Cd 1− x Zn x Te strained-layer single quantum wells T Li, HJ Lozykowski, JL Reno Physical Review B 46 (11), 6961, 1992 | 50 | 1992 |
| Low-temperature growth of ZnSe crystals R Triboulet, F Rabago, R Legros, H Lozykowski, G Didier Journal of Crystal Growth 59 (1-2), 172-177, 1982 | 49 | 1982 |
| Cathodoluminescence of GaN doped with Sm and Ho HJ Lozykowski, WM Jadwisienczak, I Brown Solid state communications 110 (5), 253-258, 1999 | 48 | 1999 |
| Crystal-field splitting of energy levels in GaN JB Gruber, B Zandi, HJ Lozykowski, WM Jadwisienczak, I Brown Journal of Applied Physics 89 (12), 7973-7976, 2001 | 41 | 2001 |
| Optical properties of Yb ions in GaN epilayer WM Jadwisienczak, HJ Lozykowski Optical Materials 23 (1-2), 175-181, 2003 | 39 | 2003 |
| Spectra and energy levels of in GaN JB Gruber, B Zandi, HJ Lozykowski, WM Jadwisienczak Journal of applied physics 92 (9), 5127-5132, 2002 | 38 | 2002 |
| Catalyst-free synthesis and luminescence of aligned ZnO nanorods A Khan, WM Jadwisienczak, HJ Lozykowski, ME Kordesch Physica E: Low-Dimensional Systems and Nanostructures 39 (2), 258-261, 2007 | 35 | 2007 |
Andre AndersLeibniz Institute of Surface Engineering (IOM)E-mailová adresa ověřena na: iom-leipzig.de
