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Hadass S. Inbar
Hadass S. Inbar
PhD student, UCSB
E-mailová adresa ověřena na: ucsb.edu - Domovská stránka
Název
Citace
Citace
Rok
Thickness of hydroxyapatite nanocrystal controls mechanical properties of the collagen–hydroxyapatite interface
Z Qin, A Gautieri, AK Nair, H Inbar, MJ Buehler
Langmuir 28 (4), 1982-1992, 2012
1362012
Self-aligned van der Waals heterojunction diodes and transistors
VK Sangwan, ME Beck, A Henning, J Luo, H Bergeron, J Kang, I Balla, ...
Nano letters 18 (2), 1421-1427, 2018
602018
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
S Chatterjee, S Khalid, HS Inbar, A Goswami, FC de Lima, A Sharan, ...
Physical Review B 99 (12), 125134, 2019
162019
Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films
HS Inbar, DQ Ho, S Chatterjee, M Pendharkar, AN Engel, JT Dong, ...
Physical Review Materials 6 (12), L121201, 2022
102022
Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
S Chatterjee, S Khalid, HS Inbar, A Goswami, T Guo, YH Chang, E Young, ...
Science advances 7 (16), eabe8971, 2021
72021
Electronic structure of InSb (001),(110), and (111) B surfaces
JT Dong, HS Inbar, M Pendharkar, TAJ van Schijndel, EC Young, ...
arXiv preprint arXiv:2302.09234, 2023
42023
Towards merged-element transmons using silicon fins: The FinMET
A Goswami, AP McFadden, T Zhao, H Inbar, JT Dong, R Zhao, ...
Applied Physics Letters 121 (6), 064001, 2022
42022
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler
S Chatterjee, FC de Lima, JA Logan, Y Fang, H Inbar, A Goswami, ...
Physical Review Materials 5 (12), 124207, 2021
32021
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler
S Chatterjee, FC de Lima, JA Logan, Y Fang, H Inbar, A Goswami, ...
Physical Review Materials 5 (12), 124207, 2021
32021
Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films
HS Inbar, M Zubair, JT Dong, AN Engel, CP Dempsey, YH Chang, ...
arXiv preprint arXiv:2302.00803, 2023
12023
Strain Tuning the Band Topology of Epitaxial GdSb Quantum Wells
HS Inbar, DQ Ho, S Chatterjee, AN Engel, S Khalid, CP Dempsey, ...
arXiv preprint arXiv:2211.15806, 2022
12022
Molecular Beam Epitaxy Growth of Ferromagnetic MnSb on InGaSb: Characterization of Orientation, Interfaces, and Magnetic Properties
C Dempsey, J Dong, H Inbar, A Engel, A Goswami, YH Chang, ...
APS March Meeting Abstracts 2022, W12. 002, 2022
12022
Defect-controlled Fermi-level tuning in half-Heusler topological semimetals
S Khalid, HS Inbar, S Chatterjee, CJ Palmstrom, A Janotti
arXiv preprint arXiv:2208.05415, 2022
2022
Tuning the electrical properties of GdSb thin films by epitaxial strain
H Inbar, S Chatterjee, M Pendharkar, M Bocheff, T Guo, T Brown-Heft, ...
Bulletin of the American Physical Society 65, 2020
2020
Band Structure engineering in epitaxial LuSb thin films via dimensional confinement and bi-axial strain
S Chatterjee, H Inbar, S Khalid, A Goswami, F Crasto de Lima, A Sharan, ...
APS March Meeting Abstracts 2019, R45. 008, 2019
2019
Observation of quantized conductance in quantum point contacts on near surface InAsSb quantum wells
M Pendharkar, JS Lee, M Seas, A McFadden, T Guo, C Dempsey, ...
APS March Meeting Abstracts 2019, C28. 013, 2019
2019
Chemical potential tuning and strain engineering in topological half-Heusler thin films
S Chatterjee, J Logan, N Wilson, H Inbar, T Brown-Heft, A Fedorov, ...
APS March Meeting Abstracts 2018, R17. 007, 2018
2018
Supporting Information Self-Aligned van der Waals Heterojunction Diodes and Transistors
VK Sangwan, ME Beck, A Henning, J Luo, H Bergeron, J Kang, I Balla, ...
Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.
Články 1–18