| Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching Y Li, EJ Fuller, JD Sugar, S Yoo, DS Ashby, CH Bennett, RD Horton, ... Advanced Materials 32 (45), 2003984, 2020 | 103 | 2020 |
| Adaptive synaptic memory via lithium ion modulation in RRAM devices CY Lin, J Chen, PH Chen, TC Chang, Y Wu, JK Eshraghian, J Moon, ... Small 16 (42), 2003964, 2020 | 58 | 2020 |
| Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity S Yoo, Y Wu, Y Park, WD Lu Advanced Electronic Materials 8 (8), 2101025, 2022 | 7 | 2022 |
| RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator Y Park, Z Wang, S Yoo, WD Lu IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022 | 5 | 2022 |
| Columnar Learning Networks for Multisensory Spatiotemporal Learning S Yoo, Y Park, Z Wang, Y Wu, S Medepalli, W Thio, WD Lu Advanced Intelligent Systems 4 (11), 2200179, 2022 | 3 | 2022 |
| PowerGAN: A Machine Learning Approach for Power Side‐Channel Attack on Compute‐in‐Memory Accelerators Z Wang, Y Wu, Y Park, S Yoo, X Wang, JK Eshraghian, WD Lu Advanced Intelligent Systems 5 (12), 2300313, 2023 | 1 | 2023 |
| RN-Net: Reservoir Nodes-Enabled Neuromorphic Vision Sensing Network S Yoo, EYJ Lee, Z Wang, X Wang, WD Lu arXiv preprint arXiv:2303.10770, 2023 | 1 | 2023 |
| Memory Devices: Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020) Y Li, EJ Fuller, JD Sugar, S Yoo, DS Ashby, CH Bennett, RD Horton, ... Advanced Materials 32 (45), 2070339, 2020 | 1 | 2020 |
| Thermodynamic origin of nonvolatility in resistive switching Y Li, J Li, A Appachar, S Peczonczyk, E Harrison, B Roest, A Ievlev, ... | | 2022 |
| Spatiotemporal Spike Pattern Detection with Second-order Memristive Synapses Y Wu, S Yoo, FH Meng, WD Lu 2022 IEEE International Symposium on Circuits and Systems (ISCAS), 625-628, 2022 | | 2022 |
| Method for fabricating a semiconductor device E Hwang, J Kim, H Na, B Suh, S Yoo, J Jung, S Lee US Patent 20210265351A1, 2021 | | 2021 |
| Semiconductor devices S Yoo, B Kim, J Kim, B Suh, H Na, S Lee, J Jung, E Hwang US Patent 011063150B2, 2021 | | 2021 |
| Semiconductor devices including diffusion break regions J Park, J Kim, H Na, S Yoo, E Hwang US Patent 20210118885A1, 2021 | | 2021 |
| Semiconductor device and method for fabricating the same S Yoo, J Kim, H Na, B Suh, J Jung, E Hwang, S Lee US Patent 20210005603A1, 2021 | | 2021 |
| FINFETs having electrically insulating diffusion break regions therein and methods of forming same H Na, J Kim, B Suh, S Yoo, J Jung, E Hwang, S Lee US Patent 010636793B2, 2020 | | 2020 |
Wei D. LuEECS Professor, University of Michigan, IEEE Fellow. co-founder MemryX Inc, Crossbar Inc.Verified email at umich.edu
