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Paria Gharavi
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Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory
X Liu, D Wang, KH Kim, K Katti, J Zheng, P Musavigharavi, J Miao, ...
Nano Letters 21 (9), 3753-3761, 2021
1042021
Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios
X Liu, J Zheng, D Wang, P Musavigharavi, EA Stach, R Olsson, ...
Applied Physics Letters 118 (20), 2021
702021
Ferroelectric switching in sub-20 nm aluminum scandium nitride thin films
D Wang, J Zheng, P Musavigharavi, W Zhu, AC Foucher, ...
IEEE Electron Device Letters 41 (12), 1774-1777, 2020
702020
The improvement of light scattering of dye-sensitized solar cells aided by a new dandelion-like TiO2 nanostructures
PSM Gharavi, MR Mohammadi
Solar Energy Materials and Solar Cells 137, 113-123, 2015
472015
Sub‐microsecond polarization switching in (Al, Sc) N ferroelectric capacitors grown on complementary metal–oxide–semiconductor‐compatible aluminum electrodes
D Wang, P Musavigharavi, J Zheng, G Esteves, X Liu, MMA Fiagbenu, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2000575, 2021
462021
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors
KH Kim, S Oh, MMA Fiagbenu, J Zheng, P Musavigharavi, P Kumar, ...
Nature nanotechnology 18 (9), 1044-1050, 2023
412023
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
DJ Xiwen Liu, John Ting, Yunfei He, Merrilyn Mercy Adzo Fiagbenu, Jeffrey ...
Nano letters 22 (1), 2022
272022
Ferroelectric c-axis textured aluminum scandium nitride thin films of 100 nm thickness
D Wang, J Zheng, Z Tang, M D'Agati, PSM Gharavi, X Liu, D Jariwala, ...
2020 Joint Conference of the IEEE International Frequency Control Symposium …, 2020
232020
Large-scale multiferroic complex oxide epitaxy with magnetically switched polarization enabled by solution processing
C Liu, F An, PSM Gharavi, Q Lu, J Zha, C Chen, L Wang, X Zhan, Z Xu, ...
National Science Review 7 (1), 84-91, 2020
232020
Ferroelectric behavior of sputter deposited Al0. 72Sc0. 28N approaching 5 nm thickness
JX Zheng, MMA Fiagbenu, G Esteves, P Musavigharavi, A Gunda, ...
Applied Physics Letters 122 (22), 2023
182023
Nanoscale structural and chemical properties of ferroelectric aluminum scandium nitride thin films
P Musavigharavi, AC Meng, D Wang, J Zheng, AC Foucher, RH Olsson III, ...
The Journal of Physical Chemistry C 125 (26), 14394-14400, 2021
152021
Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure
JX Zheng, D Wang, P Musavigharavi, MMA Fiagbenu, D Jariwala, ...
Journal of Applied Physics 130 (14), 2021
122021
GaP–ZnS multilayer films: Visible-light photoelectrodes by interface engineering
CK Park, PSM Gharavi, F Kurnia, Q Zhang, CY Toe, M Al-Farsi, NL Allan, ...
The Journal of Physical Chemistry C 123 (6), 3336-3342, 2019
102019
A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al0.72Sc0.28N
MMA Fiagbenu, P Musavigharavi, X Du, J Leathersich, C Moe, A Kochhar, ...
IEEE Electron Device Letters, 2023
92023
Comparative study on effect of titania morphology for light harvesting and scattering of DSSCs: Mesoporous nanoparticles, microspheres, and dandelion‐like particles
N Mozaffari, MR Mohammadi, ZA Garmaroudi, PSM Gharavi
Environmental Progress & Sustainable Energy 35 (6), 1818-1826, 2016
82016
ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent
P Musavigharavi, F Kurnia, L Xie, CKY Park, YH Ng, J He, JN Hart, ...
ACS Applied Energy Materials 4 (10), 10756-10761, 2021
62021
Understanding the Role of Defective Phases on the Conductivity Behavior of Strained Epitaxial LaNiO3 Thin Films
JC Wong, X Cheng, P Musavigharavi, F Xiang, AR Hamilton, N Valanoor, ...
ACS Applied Electronic Materials 4 (3), 1196-1205, 2022
52022
Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers
Y He, S Chen, MMA Fiagbenu, C Leblanc, P Musavigharavi, G Kim, X Du, ...
Applied Physics Letters 123 (12), 2023
42023
Interfacial origins of visible-light photocatalytic activity in ZnS–GaP multilayers
PSM Gharavi, L Xie, RF Webster, CKY Park, YH Ng, J He, JN Hart, ...
Acta Materialia 181, 139-147, 2019
42019
A CMOS compatible aluminum scandium nitride-based ferroelectric tunnel junction memristor
X Liu, J Zheng, D Wang, P Musavigharavi, EA Stach, R Olsson III, ...
arXiv preprint arXiv:2012.10019, 2020
32020
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