| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1067 | 2018 |
| Materials and processing issues in vertical GaN power electronics J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios Materials Science in Semiconductor Processing 78, 75-84, 2018 | 146 | 2018 |
| Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects K Hoo Teo, Y Zhang, N Chowdhury, S Rakheja, R Ma, Q Xie, E Yagyu, ... Journal of Applied Physics 130 (16), 2021 | 144 | 2021 |
| Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ... IEEE Electron Device Letters 40 (1), 75-78, 2018 | 139 | 2018 |
| P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ... IEEE Electron Device Letters 40 (7), 1036-1039, 2019 | 109 | 2019 |
| Regrowth-free GaN-based Complementary Logic on a Si Substrate N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios IEEE Electron Device Letters 41 (5), 2020 | 104 | 2020 |
| 720-V/0.35-m cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers Y Zhang, M Yuan, N Chowdhury, K Cheng, T Palacios IEEE Electron Device Letters 39 (5), 715-718, 2018 | 93 | 2018 |
| Prospects for wide bandgap and ultrawide bandgap CMOS devices SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ... IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020 | 89 | 2020 |
| GaN nanowire n-MOSFET with 5 nm channel length for applications in digital electronics N Chowdhury, G Iannaccone, G Fiori, DA Antoniadis, T Palacios IEEE electron device letters 38 (7), 859-862, 2017 | 53 | 2017 |
| First demonstration of a self-aligned GaN p-FET N Chowdhury, Q Xie, M Yuan, NS Rajput, P Xiang, K Cheng, HW Then, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2019 | 44 | 2019 |
| Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios IEEE Electron Device Letters 40 (8), 1245-1248, 2019 | 36 | 2019 |
| Self-Aligned E-mode GaN p-Channel FinFET with Ion> 100 mA/mm and Ion/Ioff> 107 N Chowdhury, Q Xie, T Palacios IEEE Electron Device Letters, 2022 | 31 | 2022 |
| Field-induced acceptor ionization in enhancement-mode GaN p-MOSFETs N Chowdhury, Q Xie, J Niroula, NS Rajput, K Cheng, HW Then, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2020 | 27 | 2020 |
| Tungsten-Gated GaN/AlGaN p-FET with Imax> 120 mA/mm on GaN-on-Si N Chowdhury, Q Xie, T Palacios IEEE Electron Device Letters, 2022 | 25 | 2022 |
| Negative capacitance tunnel field effect transistor: A novel device with low subthreshold swing and high on current N Chowdhury, SMF Azad, QDM Khosru ECS Transactions 58 (16), 1, 2014 | 24 | 2014 |
| Barrier heights and Fermi level pinning in metal contacts on p-type GaN S Wahid, N Chowdhury, MK Alam, T Palacios Applied Physics Letters 116 (21), 2020 | 20 | 2020 |
| Structural, dielectric and magnetic properties of Ta-substituted Bi0. 8La0. 2FeO3 multiferroics T Fakhrul, R Mahbub, N Chowdhury, QDM Khosru, A Sharif Journal Of Alloys And Compounds 622, 471-476, 2015 | 20 | 2015 |
| Superior performance of 5-nm gate length GaN nanowire nFET for digital logic applications Y Chu, SC Lu, N Chowdhury, M Povolotskyi, G Klimeck, M Mohamed, ... IEEE Electron Device Letters 40 (6), 874-877, 2019 | 19 | 2019 |
| NbN-gated GaN transistor technology for applications in quantum computing systems Q Xie, N Chowdhury, A Zubair, MS Lozano, J Lemettinen, M Colangelo, ... 2021 symposium on VLSI technology, 1-2, 2021 | 16 | 2021 |
| GaN ring oscillators operational at 500° C based on a GaN-on-Si platform M Yuan, Q Xie, K Fu, T Hossain, J Niroula, JA Greer, N Chowdhury, ... IEEE Electron Device Letters 43 (11), 1842-1845, 2022 | 15 | 2022 |
Tomás PalaciosMITE-mailová adresa ověřena na: mit.edu
