| Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, LM Murray, ... Applied Physics Letters 101 (9), 2012 | 249 | 2012 |
| Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, ME Flatté, ... Applied Physics Letters 103 (5), 2013 | 96 | 2013 |
| Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, ME Flatté, ... Applied Physics Letters 105 (2), 2014 | 82 | 2014 |
| Intensity- and Temperature-Dependent Carrier Recombination in Type-II Superlattices BV Olson, EA Kadlec, JK Kim, JF Klem, SD Hawkins, EA Shaner, ... Physical Review Applied 3 (4), 044010, 2015 | 76 | 2015 |
| Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers MD Goldflam, EA Kadlec, BV Olson, JF Klem, SD Hawkins, ... Applied Physics Letters 109 (25), 2016 | 56 | 2016 |
| Cascaded superlattice InAs/GaSb light-emitting diodes for operation in the long-wave infrared EJ Koerperick, DT Norton, JT Olesberg, BV Olson, JP Prineas, ... IEEE Journal of Quantum Electronics 47 (1), 50-54, 2010 | 52 | 2010 |
| Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors D Zuo, R Liu, D Wasserman, J Mabon, ZY He, S Liu, YH Zhang, ... Applied Physics Letters 106 (7), 2015 | 51 | 2015 |
| Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices BV Olson, CH Grein, JK Kim, EA Kadlec, JF Klem, SD Hawkins, ... Applied Physics Letters 107 (26), 2015 | 47 | 2015 |
| All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices BV Olson, LM Murray, JP Prineas, ME Flatté, JT Olesberg, TF Boggess Applied Physics Letters 102 (20), 2013 | 41 | 2013 |
| Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, J Olesberg, ... Journal of Applied Physics 119 (21), 2016 | 35 | 2016 |
| Vertical Hole Transport and Carrier Localization in Type-II Superlattice Heterojunction Bipolar Transistors BV Olson, JF Klem, EA Kadlec, JK Kim, MD Goldflam, SD Hawkins, ... Physical Review Applied 7 (2), 024016, 2017 | 34 | 2017 |
| Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1− xSbx type-II superlattices EA Kadlec, BV Olson, MD Goldflam, JK Kim, JF Klem, SD Hawkins, ... Applied Physics Letters 109 (26), 2016 | 31 | 2016 |
| Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, ME Flatte, ... Journal of Applied Physics 118 (12), 2015 | 31 | 2015 |
| Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in Type-II Superlattices Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, ME Flatté, ... Physical Review Applied 5 (5), 054016, 2016 | 27 | 2016 |
| Time-resolved measurements of charge carrier dynamics and optical nonlinearities in narrow-bandgap semiconductors BV Olson The University of Iowa, 2013 | 26 | 2013 |
| Post growth annealing study on long wavelength infrared InAs/GaSb superlattices HJ Haugan, GJ Brown, S Elhamri, S Pacley, BV Olson, TF Boggess Journal of Applied Physics 111 (5), 2012 | 25 | 2012 |
| Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0. 91Sb0. 09 alloy nBn photodetectors BV Olson, JK Kim, EA Kadlec, JF Klem, SD Hawkins, D Leonhardt, ... Applied Physics Letters 107 (18), 2015 | 24 | 2015 |
| Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices LM Murray, KS Lokovic, BV Olson, A Yildirim, TF Boggess, JP Prineas Journal of crystal growth 386, 194-198, 2014 | 23 | 2014 |
| Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure GC Dyer, X Shi, BV Olson, SD Hawkins, JF Klem, EA Shaner, W Pan Applied Physics Letters 108 (1), 2016 | 13 | 2016 |
| Nondegenerate two-photon absorption in GaSb BV Olson, MP Gehlsen, TF Boggess Optics Communications 304, 54-57, 2013 | 11 | 2013 |
Eric ShanerDistinguished Member of Technical Staff, Sandia National LaboratoriesE-mailová adresa ověřena na: sandia.gov
