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| 200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study MI Current, D Lopes, MA Foad, JG England, C Jones, D Su Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 26 | 1998 |
| Methods of implanting ions and ion sources used for same C Hatem, J England, L Sneddon, R Low, A Renau, A Perel, ... US Patent App. 11/342,183, 2007 | 25 | 2007 |
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| Toward Fully Printed Memristive Elements: a-TiO2 Electronic Synapse from Functionalized Nanoparticle Ink B Salonikidou, T Yasunori, B Le Borgne, J England, T Shizuo, RA Sporea ACS Applied Electronic Materials 1 (12), 2692-2700, 2019 | 19 | 2019 |
| Technique for uniformity tuning in an ion implanter system JC Olson, JG England, MD Evans, DT Fielder, GA Norris, S Chang, ... US Patent 7,355,188, 2008 | 17 | 2008 |
| The effect of RF plasma power on remote plasma sputtered AZO thin films BC Bussell, PN Gibson, J Lawton, P Couture, MK Sharpe, J England, ... Surface and Coatings Technology 442, 128402, 2022 | 15 | 2022 |
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