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Mukund Bapna
Mukund Bapna
PhD, Carnegie Mellon University | Integration and Development Engineer, Intel
Verified email at intel.com
Title
Cited by
Cited by
Year
Superparamagnetic perpendicular magnetic tunnel junctions for true random number generators
B Parks, M Bapna, J Igbokwe, H Almasi, W Wang, SA Majetich
AIP Advances 8 (5), 2018
642018
Current control of time-averaged magnetization in superparamagnetic tunnel junctions
M Bapna, SA Majetich
Applied Physics Letters 111 (24), 2017
462017
Crossover from photodarkening to photobleaching in a-GexSe100-x thin films
RR Kumar, AR Barik, EM Vinod, M Bapna, KS Sangunni, KV Adarsh
Optics Letters 38 (10), 1682-1684, 2013
362013
Airborne black carbon concentrations over an urban region in western India—temporal variability, effects of meteorology, and source regions
M Bapna, R Sunder Raman, S Ramachandran, TA Rajesh
Environmental Science and Pollution Research 20, 1617-1631, 2013
332013
Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling
D Zhang, M Bapna, W Jiang, D Sousa, YC Liao, Z Zhao, Y Lv, P Sahu, ...
Nano letters 22 (2), 622-629, 2022
312022
Magnetic stray fields in nanoscale magnetic tunnel junctions
S Jenkins, A Meo, LE Elliott, SK Piotrowski, M Bapna, RW Chantrell, ...
Journal of Physics D: Applied Physics 53 (4), 044001, 2019
292019
Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film
AR Barik, M Bapna, DA Drabold, KV Adarsh
Scientific reports 4 (1), 3686, 2014
282014
Size and voltage dependence of effective anisotropy in sub-100-nm perpendicular magnetic tunnel junctions
SK Piotrowski, M Bapna, SD Oberdick, SA Majetich, M Li, CL Chien, ...
Physical Review B 94 (1), 014404, 2016
272016
Tracking the Verwey transition in single magnetite nanocrystals by variable-temperature scanning tunneling microscopy
A Hevroni, M Bapna, S Piotrowski, SA Majetich, G Markovich
The Journal of Physical Chemistry Letters 7 (9), 1661-1666, 2016
262016
Magnetostatic effects on switching in small magnetic tunnel junctions
M Bapna, SK Piotrowski, SD Oberdick, M Li, CL Chien, SA Majetich
Applied Physics Letters 108 (2), 2016
232016
Light induced diffusion driven self assembly of Ag nanoparticles in a-Se/Ag bi-layer thin film with ultrafast optical response
M Bapna, R Sharma, AR Barik, P Khan, R Ranjan Kumar, KV Adarsh
Applied Physics Letters 102 (21), 2013
222013
Electric field switchable magnetic devices
JP Wang, D Zhang, SA Majetich, M Bapna
US Patent 10,586,579, 2020
202020
Spin-orbit-torque switching in 20-nm perpendicular magnetic tunnel junctions
M Bapna, B Parks, S Oberdick, H Almasi, W Wang, SA Majetich
Phys. Rev. Applied 10 (2), 024013, 2018
142018
Magnetic vortices in nanocaps induced by curvature
AM Abdelgawad, N Nambiar, M Bapna, H Chen, SA Majetich
AIP Advances 8 (5), 2018
132018
Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions
L Tryputen, KH Tu, SK Piotrowski, M Bapna, SA Majetich, C Sun, ...
Nanotechnology 27 (18), 185302, 2016
132016
Conductive atomic force microscopy of small magnetic tunnel junctions with interface anisotropy
SK Piotrowski, M Bapna, H Almasi, WG Wang, L Tryputen, CA Ross, M Li, ...
IEEE Transactions on Magnetics 51 (11), 1-4, 2015
72015
Electric field switchable magnetic devices
JP Wang, D Zhang, SA Majetich, M Bapna
US Patent 10,854,257, 2020
52020
Intensity-dependent transient photodarkening in visible and far infrared absorption spectra of As50Se50 thin film
AR Barik, M Bapna, R Naik, U Deshpande, T Shripathi, KV Adarsh
Materials Chemistry and Physics 138 (2-3), 479-483, 2013
42013
Intel PowerVia technology: Backside power delivery for high density and high-performance computing
W Hafez, P Agnihotri, M Asoro, M Aykol, B Bains, R Bambery, M Bapna, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
32023
Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy
M Bapna, B Parks, S Oberdick, H Almasi, C Sun, P Voyles, W Wang, ...
Journal of Magnetism and Magnetic Materials 483, 34-41, 2019
22019
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