Jan Grym
Jan Grym
Institute of Photnics and Electronics
E-mailová adresa ověřena na: ufe.cz - Domovská stránka
Název
Citace
Citace
Rok
Growth and spatially resolved luminescence of low dimensional structures in sintered ZnO
J Grym, P Fernández, J Piqueras
Nanotechnology 16 (6), 931, 2005
502005
Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing
R Yatskiv, J Grym, K Zdansky, K Piksova
Carbon 50 (10), 3928-3933, 2012
302012
Luminescence properties of hydrothermally grown ZnO nanorods
R Yatskiv, J Grym
Superlattices and Microstructures 99, 214-220, 2016
272016
Electrical and optical properties of graphite/ZnO nanorods heterojunctions
R Yatskiv, VV Brus, M Verde, J Grym, P Gladkov
Carbon 77, 1011-1019, 2014
272014
Transport properties of metal–semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles
R Yatskiv, J Grym, VV Brus, O Cernohorsky, PD Maryanchuk, C Bazioti, ...
Semiconductor Science and Technology 29 (4), 045017, 2014
272014
Graphite/ZnO nanorods junction for ultraviolet photodetectors
R Yatskiv, J Grym, M Verde
Solid-State Electronics 105, 70-73, 2015
252015
Semiconductor technologies
J Grym
BoD–Books on Demand, 2010
242010
Room temperature hydrogen sensing with the graphite/ZnO nanorod junctions decorated with Pt nanoparticles
R Yatskiv, J Grym, P Gladkov, O Cernohorsky, J Vanis, J Maixner, ...
Solid-State Electronics 116, 124-129, 2016
222016
Graphite/CdMnTe Schottky diodes and their electrical characteristics
LA Kosyachenko, R Yatskiv, NS Yurtsenyuk, OL Maslyanchuk, J Grym
Semiconductor Science and Technology 29 (1), 015006, 2013
212013
Temperature-dependent properties of semimetal graphite-ZnO Schottky diodes
R Yatskiv, J Grym
Applied Physics Letters 101 (16), 162106, 2012
202012
Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP
J Grym, O Procházková, R Yatskiv, K Piksová
Nanoscale research letters 6 (1), 1-5, 2011
202011
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes
R Yatskiv, J Grym
Semiconductor science and technology 28 (5), 055009, 2013
162013
Epitaxial growth on porous GaAs substrates
J Grym, D Nohavica, P Gladkov, E Hulicius, J Pangrác, K Piksová
Comptes Rendus Chimie 16 (1), 59-64, 2013
122013
Insight into nanoparticle charging mechanism in nonpolar solvents to control the formation of Pt nanoparticle monolayers by electrophoretic deposition
O Černohorský, J Grym, R Yatskiv, VH Pham, JH Dickerson
ACS applied materials & interfaces 8 (30), 19680-19690, 2016
112016
Role of rare-earth elements in the technology of III–V semiconductors prepared by liquid phase epitaxy
J Grym, O Procházková, J Zavadil, K Žďánský
Semiconductor Technologies, 295-320, 2010
102010
Electrical and optical properties of rectifying ZnO homojunctions fabricated by wet chemistry methods
R Yatskiv, S Tiagulskyi, J Grym, O Cernohorsky
physica status solidi (a) 215 (2), 1700592, 2018
92018
Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates
GP Dimitrakopulos, C Bazioti, J Grym, P Gladkov, E Hulicius, J Pangrác, ...
Applied surface science 306, 89-93, 2014
92014
Elastic constants of nanoporous III-V semiconductors
M Janovská, P Sedlák, A Kruisová, H Seiner, M Landa, J Grym
Journal of Physics D: Applied Physics 48 (24), 245102, 2015
82015
Preparation of nanoporous GaAs substrates for epitaxial growth
J Grym, D Nohavica, J Vaniš, K Piksová
physica status solidi c 9 (7), 1531-1533, 2012
82012
Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
D Nohavica, J Grym, P Gladkov, E Hulicius, J Pangrac, Z Jarchovský
International journal of nanotechnology 9 (8-9), 732-745, 2012
82012
Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.
Články 1–20